Effect of work function difference between top and bottom electrodes on the resistive switching properties of SiN films

Seok Man Hong; Hee Dong Kim; Ho Myoung An; Tae Geun Kim

doi:10.1109/LED.2013.2272631

Effect of work function difference between top and bottom electrodes on the resistive switching properties of SiN films

Seok Man Hong, Hee Dong Kim, Ho Myoung An, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

45 Citations (Scopus)

Abstract

In this letter, the effect of the work function difference between various top electrodes (TE-Ni, W, Ti, and Al) and the Pt bottom electrode, ΔΦM, on the resistive switching (RS) of SiN thin films was investigated. The cells with W and Ti TEs showed stable RS, but others failed to show RS. In particular, the Ti TE exhibited low operating currents (∼2μ A) and good retention properties (<∼ 10⁴ s at 85° C). On the basis of the analysis of conduction mechanisms, it is found that stable RS of SiN films might be strongly related to the activation energy of traps induced by ΔΦM. Thus, the RS properties of the SiN films can be improved by engineering ΔΦM without additional processes.

Original language	English
Article number	6563100
Pages (from-to)	1181-1183
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	9
DOIs	https://doi.org/10.1109/LED.2013.2272631
Publication status	Published - 2013

Keywords

Activation energy of traps
resistive random access memories (RRAM)
resistive switching
silicon nitride
work function difference

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2013.2272631

Cite this

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title = "Effect of work function difference between top and bottom electrodes on the resistive switching properties of SiN films",

abstract = "In this letter, the effect of the work function difference between various top electrodes (TE-Ni, W, Ti, and Al) and the Pt bottom electrode, ΔΦM, on the resistive switching (RS) of SiN thin films was investigated. The cells with W and Ti TEs showed stable RS, but others failed to show RS. In particular, the Ti TE exhibited low operating currents (∼2μ A) and good retention properties (<∼ 104 s at 85° C). On the basis of the analysis of conduction mechanisms, it is found that stable RS of SiN films might be strongly related to the activation energy of traps induced by ΔΦM. Thus, the RS properties of the SiN films can be improved by engineering ΔΦM without additional processes.",

keywords = "Activation energy of traps, resistive random access memories (RRAM), resistive switching, silicon nitride, work function difference",

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language = "English",

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T1 - Effect of work function difference between top and bottom electrodes on the resistive switching properties of SiN films

AU - Hong, Seok Man

AU - Kim, Hee Dong

AU - An, Ho Myoung

AU - Kim, Tae Geun

PY - 2013

Y1 - 2013

N2 - In this letter, the effect of the work function difference between various top electrodes (TE-Ni, W, Ti, and Al) and the Pt bottom electrode, ΔΦM, on the resistive switching (RS) of SiN thin films was investigated. The cells with W and Ti TEs showed stable RS, but others failed to show RS. In particular, the Ti TE exhibited low operating currents (∼2μ A) and good retention properties (<∼ 104 s at 85° C). On the basis of the analysis of conduction mechanisms, it is found that stable RS of SiN films might be strongly related to the activation energy of traps induced by ΔΦM. Thus, the RS properties of the SiN films can be improved by engineering ΔΦM without additional processes.

AB - In this letter, the effect of the work function difference between various top electrodes (TE-Ni, W, Ti, and Al) and the Pt bottom electrode, ΔΦM, on the resistive switching (RS) of SiN thin films was investigated. The cells with W and Ti TEs showed stable RS, but others failed to show RS. In particular, the Ti TE exhibited low operating currents (∼2μ A) and good retention properties (<∼ 104 s at 85° C). On the basis of the analysis of conduction mechanisms, it is found that stable RS of SiN films might be strongly related to the activation energy of traps induced by ΔΦM. Thus, the RS properties of the SiN films can be improved by engineering ΔΦM without additional processes.

KW - Activation energy of traps

KW - resistive random access memories (RRAM)

KW - resistive switching

KW - silicon nitride

KW - work function difference

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M3 - Article

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JF - IEEE Electron Device Letters

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Effect of work function difference between top and bottom electrodes on the resistive switching properties of SiN films

Abstract

Keywords

ASJC Scopus subject areas

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