Effect of work function difference between top and bottom electrodes on the resistive switching properties of SiN films

Seok Man Hong, Hee Dong Kim, Ho Myoung An, Tae Geun Kim

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

In this letter, the effect of the work function difference between various top electrodes (TE-Ni, W, Ti, and Al) and the Pt bottom electrode, ΔΦM, on the resistive switching (RS) of SiN thin films was investigated. The cells with W and Ti TEs showed stable RS, but others failed to show RS. In particular, the Ti TE exhibited low operating currents (∼2μ A) and good retention properties (<∼ 104 s at 85° C). On the basis of the analysis of conduction mechanisms, it is found that stable RS of SiN films might be strongly related to the activation energy of traps induced by ΔΦM. Thus, the RS properties of the SiN films can be improved by engineering ΔΦM without additional processes.

Original languageEnglish
Article number6563100
Pages (from-to)1181-1183
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number9
DOIs
Publication statusPublished - 2013 Sep 3

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Electrodes
Activation energy
Thin films

Keywords

  • Activation energy of traps
  • resistive random access memories (RRAM)
  • resistive switching
  • silicon nitride
  • work function difference

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Effect of work function difference between top and bottom electrodes on the resistive switching properties of SiN films. / Hong, Seok Man; Kim, Hee Dong; An, Ho Myoung; Kim, Tae Geun.

In: IEEE Electron Device Letters, Vol. 34, No. 9, 6563100, 03.09.2013, p. 1181-1183.

Research output: Contribution to journalArticle

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