Effect of Zr concentration on the microstructure of Al and the magnetoresistance properties of the magnetic tunnel junction with a Zr-alloyed Al-oxide barrier

Seong Rae Lee, Chul Min Choi, Young Keun Kim

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

A Zr-alloyed Al-oxide barrier was used to study the composition dependence of the microstructure of Al-Zr alloy films and the tunneling magnetoresistance (TMR) behavior of magnetic tunnel junctions (MTJ). The microstructure of the Al-Zr alloy before oxidation was found to have a dominant effect on the TMR characteristics and MTJ stability. A single amorphous Al-Zr alloy has superior surface uniformity.

Original languageEnglish
Pages (from-to)317-319
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number2
DOIs
Publication statusPublished - 2003 Jul 14

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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