Effective Contact Formation Method on High-Sheet-Resistance Boron-Doped Emitter with Current Injection

Soohyun Bae, Jae Wook Choi, Chanseok Kim, Seung Hyun Shin, Hyunjung Park, Yoon Mook Kang, Haeseok Lee, Donghwan Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We investigate the effect of current injection during contact formation of an Ag-based screen-printed electrode to boron-doped emitters, which differ by their sheet resistances. The average contact resistivities between the metal electrode and silicon of all the boron-doped emitter samples are ∼3 mω cm 2 , regardless of the sheet resistance (75-145 Ω/sq), and the lowest values are below 1 mω cm 2 using the injection of a current density of 5 A/cm 2 during the metallization process. Additionally, the injection of current to a phosphorus-doped emitter in the opposite direction suppressed the formation of the Ag precipitates and crystallites and increased the contact resistivity of over 300 mω cm 2 , which is comparable to that obtained when Ag paste is applied to a boron-doped emitter with no current injection. This finding indicates that electrons are essential for the reduction of Ag ions during high-temperature metallization process using the screen-printing technique and that the injection of current can control the contact formation and enhance the efficiency of solar cells. Finally, we suggest a suitable process for reducing the contact resistivity in manufacturing n-type Si solar cells.

Original languageEnglish
Article number8643984
Pages (from-to)615-620
Number of pages6
JournalIEEE Journal of Photovoltaics
Volume9
Issue number3
DOIs
Publication statusPublished - 2019 May 1

Keywords

  • Boron-doped emitter
  • crystalline Si solar cells
  • current injection
  • metallization
  • screen printing

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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