Effective electrochemical gating of hole transport in aligned single-walled carbon nanotube network thin film transistors

Bonghyun Park, Chae Hyun Lim, Hyeong Seok Jeon, Chang Seung Woo, Yoon Sun Hwang, Sung Jin Choi, Chi Won Cho, Cheol Jin Lee, Seung Beck Lee

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We have investigated the electrochemical gating characteristics of hole transport in aligned single-walled carbon nanotube (SWCNT) network thin film transistors (TFT). SWCNT thin films were aligned between source and drain electrodes by using dielectrophoresis. An electric field applied between 1 mM NaCl solution and the SWCNT actively controlled the hole transport in a p-type TFT. This may be due to the applied electric field polarizing the ions creating an electrical double layer on the SWCNT surface, which actively raises or lowers the p-type thin film's Fermi level. Compared to the transfer characteristics obtained using the substrate as a backgate. electrochemical gating when shows much enhanced capacitive coupling between the gate and the SWCNT and much increased transconductance characteristics.

Original languageEnglish
Pages (from-to)S828-S832
JournalJournal of the Korean Physical Society
Volume49
Issue numberSUPPL. 3
Publication statusPublished - 2006 Dec

Keywords

  • Carbon nanotube
  • Electrochemical gating
  • Field-effect transistor
  • Network transport

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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