Effective sulfur passivation of an n-type GaN surface by an alcohol-based sulfide solution

Chul Huh; Sang Woo Kim; Hyun Soo Kim; In Hwan Lee; Seong Ju Park

doi:10.1063/1.373107

Effective sulfur passivation of an n-type GaN surface by an alcohol-based sulfide solution

Chul Huh, Sang Woo Kim, Hyun Soo Kim, In Hwan Lee, Seong Ju Park

Research output: Contribution to journal › Article › peer-review

67 Citations (Scopus)

Abstract

The sulfur passivation of an n-GaN surface was investigated by employing an aqueous (NH₄)₂S solution and (NH₄)₂S+t-C₄H₉OH solution. Photoluminescence and Auger electron spectroscopy revealed that treatment with (NH₄)₂S+t-C₄H₉OH results in a more effective passivation of the n-GaN surface than that with (NH₄)₂S due to a higher chemical reactivity of sulfur species in the former solution. The (NH₄)₂S+t-C₄H₉OH-treated sample shows a stronger photoluminescence intensity by a factor of 2.5 with respect to an untreated sample. In addition, improved Ohmic characteristics of the sample are evident from current-voltage measurements. This result can be attributed to the effective removal of an insulating layer on the n-GaN surface.

Original language	English
Pages (from-to)	4591-4593
Number of pages	3
Journal	Journal of Applied Physics
Volume	87
Issue number	9
DOIs	https://doi.org/10.1063/1.373107
Publication status	Published - 2000 May
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Effective sulfur passivation of an n-type GaN surface by an alcohol-based sulfide solution",

abstract = "The sulfur passivation of an n-GaN surface was investigated by employing an aqueous (NH4)2S solution and (NH4)2S+t-C4H9OH solution. Photoluminescence and Auger electron spectroscopy revealed that treatment with (NH4)2S+t-C4H9OH results in a more effective passivation of the n-GaN surface than that with (NH4)2S due to a higher chemical reactivity of sulfur species in the former solution. The (NH4)2S+t-C4H9OH-treated sample shows a stronger photoluminescence intensity by a factor of 2.5 with respect to an untreated sample. In addition, improved Ohmic characteristics of the sample are evident from current-voltage measurements. This result can be attributed to the effective removal of an insulating layer on the n-GaN surface.",

author = "Chul Huh and Kim, {Sang Woo} and Kim, {Hyun Soo} and Lee, {In Hwan} and Park, {Seong Ju}",

year = "2000",

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doi = "10.1063/1.373107",

language = "English",

volume = "87",

pages = "4591--4593",

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T1 - Effective sulfur passivation of an n-type GaN surface by an alcohol-based sulfide solution

AU - Huh, Chul

AU - Kim, Sang Woo

AU - Kim, Hyun Soo

AU - Lee, In Hwan

AU - Park, Seong Ju

PY - 2000/5

Y1 - 2000/5

N2 - The sulfur passivation of an n-GaN surface was investigated by employing an aqueous (NH4)2S solution and (NH4)2S+t-C4H9OH solution. Photoluminescence and Auger electron spectroscopy revealed that treatment with (NH4)2S+t-C4H9OH results in a more effective passivation of the n-GaN surface than that with (NH4)2S due to a higher chemical reactivity of sulfur species in the former solution. The (NH4)2S+t-C4H9OH-treated sample shows a stronger photoluminescence intensity by a factor of 2.5 with respect to an untreated sample. In addition, improved Ohmic characteristics of the sample are evident from current-voltage measurements. This result can be attributed to the effective removal of an insulating layer on the n-GaN surface.

AB - The sulfur passivation of an n-GaN surface was investigated by employing an aqueous (NH4)2S solution and (NH4)2S+t-C4H9OH solution. Photoluminescence and Auger electron spectroscopy revealed that treatment with (NH4)2S+t-C4H9OH results in a more effective passivation of the n-GaN surface than that with (NH4)2S due to a higher chemical reactivity of sulfur species in the former solution. The (NH4)2S+t-C4H9OH-treated sample shows a stronger photoluminescence intensity by a factor of 2.5 with respect to an untreated sample. In addition, improved Ohmic characteristics of the sample are evident from current-voltage measurements. This result can be attributed to the effective removal of an insulating layer on the n-GaN surface.

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Effective sulfur passivation of an n-type GaN surface by an alcohol-based sulfide solution

Abstract

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