Effective sulfur passivation of an n-type GaN surface by an alcohol-based sulfide solution

Chul Huh, Sang Woo Kim, Hyun Soo Kim, In-Hwan Lee, Seong Ju Park

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Abstract

The sulfur passivation of an n-GaN surface was investigated by employing an aqueous (NH 4 ) 2 S solution and (NH 4 ) 2 S+t-C 4 H 9 OH solution. Photoluminescence and Auger electron spectroscopy revealed that treatment with (NH 4 ) 2 S+t-C 4 H 9 OH results in a more effective passivation of the n-GaN surface than that with (NH 4 ) 2 S due to a higher chemical reactivity of sulfur species in the former solution. The (NH 4 ) 2 S+t-C 4 H 9 OH-treated sample shows a stronger photoluminescence intensity by a factor of 2.5 with respect to an untreated sample. In addition, improved Ohmic characteristics of the sample are evident from current-voltage measurements. This result can be attributed to the effective removal of an insulating layer on the n-GaN surface.

Original languageEnglish
Pages (from-to)4591-4593
Number of pages3
JournalJournal of Applied Physics
Volume87
Issue number9
DOIs
Publication statusPublished - 2000 Jan 1
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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