Effective surface passivation of CdMnTe materials

K. H. Kim, V. Carcelén, A. E. Bolotnikov, G. S. Camarda, R. Gul, A. Hossain, G. Yang, Y. Cui, R. B. James

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Passivation is an important process that reduces surface leakage current and its attendant noise. We treated detector-grade large-volume CdMnTe:In samples with an (NH 4)-based passivant, and compared the results with untreated samples by measuring current-voltage characteristics, surface recombination velocity, Raman spectroscopy, and charge-collection mapping. The leakage current of the passivated CdMnTe (CMT) detectors decreased five to ten times, and surface recombination declined five to six times, depending on the passivation conditions applied. We satisfactorily explained these improvements in detector performance as resulting from different passivation layers that were generated by distinct chemical reactions, as determined by the pH of the passivant.

Original languageEnglish
Pages (from-to)1015-1018
Number of pages4
JournalJournal of Electronic Materials
Volume39
Issue number7
DOIs
Publication statusPublished - 2010 Jul 1

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Keywords

  • Ammonium fluoride
  • Ammonium sulfide
  • CdMnTe
  • CdMnTe:In
  • Charge-collection efficiency
  • Leakage current
  • Passivation
  • Surface recombination
  • Tellurium oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Kim, K. H., Carcelén, V., Bolotnikov, A. E., Camarda, G. S., Gul, R., Hossain, A., Yang, G., Cui, Y., & James, R. B. (2010). Effective surface passivation of CdMnTe materials. Journal of Electronic Materials, 39(7), 1015-1018. https://doi.org/10.1007/s11664-010-1090-y