Effective surface passivation of CdMnTe materials

K. H. Kim; V. Carcelén; A. E. Bolotnikov; G. S. Camarda; R. Gul; A. Hossain; G. Yang; Y. Cui; R. B. James

doi:10.1007/s11664-010-1090-y

Effective surface passivation of CdMnTe materials

K. H. Kim, V. Carcelén, A. E. Bolotnikov, G. S. Camarda, R. Gul, A. Hossain, G. Yang, Y. Cui, R. B. James

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Passivation is an important process that reduces surface leakage current and its attendant noise. We treated detector-grade large-volume CdMnTe:In samples with an (NH ₄)-based passivant, and compared the results with untreated samples by measuring current-voltage characteristics, surface recombination velocity, Raman spectroscopy, and charge-collection mapping. The leakage current of the passivated CdMnTe (CMT) detectors decreased five to ten times, and surface recombination declined five to six times, depending on the passivation conditions applied. We satisfactorily explained these improvements in detector performance as resulting from different passivation layers that were generated by distinct chemical reactions, as determined by the pH of the passivant.

Original language	English
Pages (from-to)	1015-1018
Number of pages	4
Journal	Journal of Electronic Materials
Volume	39
Issue number	7
DOIs	https://doi.org/10.1007/s11664-010-1090-y
Publication status	Published - 2010 Jul
Externally published	Yes

Keywords

Ammonium fluoride
Ammonium sulfide
CdMnTe
CdMnTe:In
Charge-collection efficiency
Leakage current
Passivation
Surface recombination
Tellurium oxide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-010-1090-y

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title = "Effective surface passivation of CdMnTe materials",

abstract = "Passivation is an important process that reduces surface leakage current and its attendant noise. We treated detector-grade large-volume CdMnTe:In samples with an (NH 4)-based passivant, and compared the results with untreated samples by measuring current-voltage characteristics, surface recombination velocity, Raman spectroscopy, and charge-collection mapping. The leakage current of the passivated CdMnTe (CMT) detectors decreased five to ten times, and surface recombination declined five to six times, depending on the passivation conditions applied. We satisfactorily explained these improvements in detector performance as resulting from different passivation layers that were generated by distinct chemical reactions, as determined by the pH of the passivant.",

keywords = "Ammonium fluoride, Ammonium sulfide, CdMnTe, CdMnTe:In, Charge-collection efficiency, Leakage current, Passivation, Surface recombination, Tellurium oxide",

author = "Kim, {K. H.} and V. Carcel{\'e}n and Bolotnikov, {A. E.} and Camarda, {G. S.} and R. Gul and A. Hossain and G. Yang and Y. Cui and James, {R. B.}",

note = "Funding Information: This work was supported by the U.S. Department of Energy, Office of Nonproliferation Research and Development, NA-22. The manuscript has been authored by Brookhaven Science Associates, LLC under Contract No. DE-AC02-98CH1-886 with the U.S. Department of Energy. Also, research carried out in part at the Center for Functional Nano-materials, Brookhaven National Laboratory, which is supported by the U.S. Department of Energy, Office of Basic Energy Sciences, under Contract No. DE-AC02-98CH10886.",

year = "2010",

month = jul,

doi = "10.1007/s11664-010-1090-y",

language = "English",

volume = "39",

pages = "1015--1018",

journal = "Journal of Electronic Materials",

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T1 - Effective surface passivation of CdMnTe materials

AU - Kim, K. H.

AU - Carcelén, V.

AU - Bolotnikov, A. E.

AU - Camarda, G. S.

AU - Gul, R.

AU - Hossain, A.

AU - Yang, G.

AU - Cui, Y.

AU - James, R. B.

N1 - Funding Information: This work was supported by the U.S. Department of Energy, Office of Nonproliferation Research and Development, NA-22. The manuscript has been authored by Brookhaven Science Associates, LLC under Contract No. DE-AC02-98CH1-886 with the U.S. Department of Energy. Also, research carried out in part at the Center for Functional Nano-materials, Brookhaven National Laboratory, which is supported by the U.S. Department of Energy, Office of Basic Energy Sciences, under Contract No. DE-AC02-98CH10886.

PY - 2010/7

Y1 - 2010/7

N2 - Passivation is an important process that reduces surface leakage current and its attendant noise. We treated detector-grade large-volume CdMnTe:In samples with an (NH 4)-based passivant, and compared the results with untreated samples by measuring current-voltage characteristics, surface recombination velocity, Raman spectroscopy, and charge-collection mapping. The leakage current of the passivated CdMnTe (CMT) detectors decreased five to ten times, and surface recombination declined five to six times, depending on the passivation conditions applied. We satisfactorily explained these improvements in detector performance as resulting from different passivation layers that were generated by distinct chemical reactions, as determined by the pH of the passivant.

AB - Passivation is an important process that reduces surface leakage current and its attendant noise. We treated detector-grade large-volume CdMnTe:In samples with an (NH 4)-based passivant, and compared the results with untreated samples by measuring current-voltage characteristics, surface recombination velocity, Raman spectroscopy, and charge-collection mapping. The leakage current of the passivated CdMnTe (CMT) detectors decreased five to ten times, and surface recombination declined five to six times, depending on the passivation conditions applied. We satisfactorily explained these improvements in detector performance as resulting from different passivation layers that were generated by distinct chemical reactions, as determined by the pH of the passivant.

KW - Ammonium fluoride

KW - Ammonium sulfide

KW - CdMnTe

KW - CdMnTe:In

KW - Charge-collection efficiency

KW - Leakage current

KW - Passivation

KW - Surface recombination

KW - Tellurium oxide

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DO - 10.1007/s11664-010-1090-y

M3 - Article

AN - SCOPUS:77954597095

SN - 0361-5235

VL - 39

SP - 1015

EP - 1018

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 7

ER -

Effective surface passivation of CdMnTe materials

Abstract

Keywords

ASJC Scopus subject areas

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