Effective surface passivation of CdMnTe materials

Kihyun Kim, V. Carcelén, A. E. Bolotnikov, G. S. Camarda, R. Gul, A. Hossain, G. Yang, Y. Cui, R. B. James

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Passivation is an important process that reduces surface leakage current and its attendant noise. We treated detector-grade large-volume CdMnTe:In samples with an (NH 4)-based passivant, and compared the results with untreated samples by measuring current-voltage characteristics, surface recombination velocity, Raman spectroscopy, and charge-collection mapping. The leakage current of the passivated CdMnTe (CMT) detectors decreased five to ten times, and surface recombination declined five to six times, depending on the passivation conditions applied. We satisfactorily explained these improvements in detector performance as resulting from different passivation layers that were generated by distinct chemical reactions, as determined by the pH of the passivant.

Original languageEnglish
Pages (from-to)1015-1018
Number of pages4
JournalJournal of Electronic Materials
Volume39
Issue number7
DOIs
Publication statusPublished - 2010 Jul 1
Externally publishedYes

Fingerprint

Passivation
passivity
Detectors
Leakage currents
detectors
leakage
Current voltage characteristics
Raman spectroscopy
Chemical reactions
grade
chemical reactions
electric potential

Keywords

  • Ammonium fluoride
  • Ammonium sulfide
  • CdMnTe
  • CdMnTe:In
  • Charge-collection efficiency
  • Leakage current
  • Passivation
  • Surface recombination
  • Tellurium oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Kim, K., Carcelén, V., Bolotnikov, A. E., Camarda, G. S., Gul, R., Hossain, A., ... James, R. B. (2010). Effective surface passivation of CdMnTe materials. Journal of Electronic Materials, 39(7), 1015-1018. https://doi.org/10.1007/s11664-010-1090-y

Effective surface passivation of CdMnTe materials. / Kim, Kihyun; Carcelén, V.; Bolotnikov, A. E.; Camarda, G. S.; Gul, R.; Hossain, A.; Yang, G.; Cui, Y.; James, R. B.

In: Journal of Electronic Materials, Vol. 39, No. 7, 01.07.2010, p. 1015-1018.

Research output: Contribution to journalArticle

Kim, K, Carcelén, V, Bolotnikov, AE, Camarda, GS, Gul, R, Hossain, A, Yang, G, Cui, Y & James, RB 2010, 'Effective surface passivation of CdMnTe materials', Journal of Electronic Materials, vol. 39, no. 7, pp. 1015-1018. https://doi.org/10.1007/s11664-010-1090-y
Kim K, Carcelén V, Bolotnikov AE, Camarda GS, Gul R, Hossain A et al. Effective surface passivation of CdMnTe materials. Journal of Electronic Materials. 2010 Jul 1;39(7):1015-1018. https://doi.org/10.1007/s11664-010-1090-y
Kim, Kihyun ; Carcelén, V. ; Bolotnikov, A. E. ; Camarda, G. S. ; Gul, R. ; Hossain, A. ; Yang, G. ; Cui, Y. ; James, R. B. / Effective surface passivation of CdMnTe materials. In: Journal of Electronic Materials. 2010 ; Vol. 39, No. 7. pp. 1015-1018.
@article{53d62089783d48ec851256ee3ab56c14,
title = "Effective surface passivation of CdMnTe materials",
abstract = "Passivation is an important process that reduces surface leakage current and its attendant noise. We treated detector-grade large-volume CdMnTe:In samples with an (NH 4)-based passivant, and compared the results with untreated samples by measuring current-voltage characteristics, surface recombination velocity, Raman spectroscopy, and charge-collection mapping. The leakage current of the passivated CdMnTe (CMT) detectors decreased five to ten times, and surface recombination declined five to six times, depending on the passivation conditions applied. We satisfactorily explained these improvements in detector performance as resulting from different passivation layers that were generated by distinct chemical reactions, as determined by the pH of the passivant.",
keywords = "Ammonium fluoride, Ammonium sulfide, CdMnTe, CdMnTe:In, Charge-collection efficiency, Leakage current, Passivation, Surface recombination, Tellurium oxide",
author = "Kihyun Kim and V. Carcel{\'e}n and Bolotnikov, {A. E.} and Camarda, {G. S.} and R. Gul and A. Hossain and G. Yang and Y. Cui and James, {R. B.}",
year = "2010",
month = "7",
day = "1",
doi = "10.1007/s11664-010-1090-y",
language = "English",
volume = "39",
pages = "1015--1018",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "7",

}

TY - JOUR

T1 - Effective surface passivation of CdMnTe materials

AU - Kim, Kihyun

AU - Carcelén, V.

AU - Bolotnikov, A. E.

AU - Camarda, G. S.

AU - Gul, R.

AU - Hossain, A.

AU - Yang, G.

AU - Cui, Y.

AU - James, R. B.

PY - 2010/7/1

Y1 - 2010/7/1

N2 - Passivation is an important process that reduces surface leakage current and its attendant noise. We treated detector-grade large-volume CdMnTe:In samples with an (NH 4)-based passivant, and compared the results with untreated samples by measuring current-voltage characteristics, surface recombination velocity, Raman spectroscopy, and charge-collection mapping. The leakage current of the passivated CdMnTe (CMT) detectors decreased five to ten times, and surface recombination declined five to six times, depending on the passivation conditions applied. We satisfactorily explained these improvements in detector performance as resulting from different passivation layers that were generated by distinct chemical reactions, as determined by the pH of the passivant.

AB - Passivation is an important process that reduces surface leakage current and its attendant noise. We treated detector-grade large-volume CdMnTe:In samples with an (NH 4)-based passivant, and compared the results with untreated samples by measuring current-voltage characteristics, surface recombination velocity, Raman spectroscopy, and charge-collection mapping. The leakage current of the passivated CdMnTe (CMT) detectors decreased five to ten times, and surface recombination declined five to six times, depending on the passivation conditions applied. We satisfactorily explained these improvements in detector performance as resulting from different passivation layers that were generated by distinct chemical reactions, as determined by the pH of the passivant.

KW - Ammonium fluoride

KW - Ammonium sulfide

KW - CdMnTe

KW - CdMnTe:In

KW - Charge-collection efficiency

KW - Leakage current

KW - Passivation

KW - Surface recombination

KW - Tellurium oxide

UR - http://www.scopus.com/inward/record.url?scp=77954597095&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77954597095&partnerID=8YFLogxK

U2 - 10.1007/s11664-010-1090-y

DO - 10.1007/s11664-010-1090-y

M3 - Article

VL - 39

SP - 1015

EP - 1018

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 7

ER -