Effective temperature measurements of AlGaN/GaN-based HEMT under various load lines using micro-Raman technique

Ji Hyun Kim, J. A. Freitas, J. Mittereder, R. Fitch, B. S. Kang, S. J. Pearton, F. Ren

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

We report on contact-free measurement of channel temperature of AlGaN/GaN HEMTs under different operation modes. Micro-Raman spectroscopy was successfully used to measure the temperature of operating HEMT devices with <1 μm spatial resolution. Channel temperatures at various load lines were compared. The effective operating temperatures of AlGaN/GaN HEMTs were accessed from the calibration curve of passively heated AlGaN/GaN structures. A linear increase of junction temperature was observed when DC dissipated power was increased. The temperature of the center of the channel in the HEMT was higher than that near the edge by ∼30 °C at 800 mW DC power. The temperature range of class A operation mode is higher than that of class B operation mode. The operating device reached temperatures as high as 115 °C at 800 mW DC input power.

Original languageEnglish
Pages (from-to)408-411
Number of pages4
JournalSolid-State Electronics
Volume50
Issue number3
DOIs
Publication statusPublished - 2006 Mar 1

Fingerprint

High electron mobility transistors
high electron mobility transistors
Temperature measurement
temperature measurement
direct current
Temperature
temperature
aluminum gallium nitride
operating temperature
Raman spectroscopy
spatial resolution
Calibration
curves

Keywords

  • GaN
  • HEMT
  • Raman
  • Reliability
  • Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Effective temperature measurements of AlGaN/GaN-based HEMT under various load lines using micro-Raman technique. / Kim, Ji Hyun; Freitas, J. A.; Mittereder, J.; Fitch, R.; Kang, B. S.; Pearton, S. J.; Ren, F.

In: Solid-State Electronics, Vol. 50, No. 3, 01.03.2006, p. 408-411.

Research output: Contribution to journalArticle

Kim, Ji Hyun ; Freitas, J. A. ; Mittereder, J. ; Fitch, R. ; Kang, B. S. ; Pearton, S. J. ; Ren, F. / Effective temperature measurements of AlGaN/GaN-based HEMT under various load lines using micro-Raman technique. In: Solid-State Electronics. 2006 ; Vol. 50, No. 3. pp. 408-411.
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AU - Kang, B. S.

AU - Pearton, S. J.

AU - Ren, F.

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AB - We report on contact-free measurement of channel temperature of AlGaN/GaN HEMTs under different operation modes. Micro-Raman spectroscopy was successfully used to measure the temperature of operating HEMT devices with <1 μm spatial resolution. Channel temperatures at various load lines were compared. The effective operating temperatures of AlGaN/GaN HEMTs were accessed from the calibration curve of passively heated AlGaN/GaN structures. A linear increase of junction temperature was observed when DC dissipated power was increased. The temperature of the center of the channel in the HEMT was higher than that near the edge by ∼30 °C at 800 mW DC power. The temperature range of class A operation mode is higher than that of class B operation mode. The operating device reached temperatures as high as 115 °C at 800 mW DC input power.

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