Effects of 340keV proton irradiation on InGaN/GaN blue light-emitting diodes

Byung Jae Kim, Ya Hsi Hwang, Shihyun Ahn, Fan Ren, Stephen J. Pearton, Ji Hyun Kim, Tae Sung Jang

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The effects of proton irradiation on optical and electrical performances of InGaN/GaN blue light-emitting diodes (LEDs) were investigated. The InGaN/GaN blue LEDs were irradiated with protons at a fixed energy of 340keV and doses ranging from 5×10<sup>10</sup> to 1×10<sup>14</sup>/cm<sup>2</sup>. Both current-voltage (I-V) and light output-current (L-I) characteristics of InGaN/GaN blue LEDs were gradually degraded as increasing the proton doses. The optical performances of LED were much more sensitive to the proton irradiation than that of electrical performances. The electroluminescence spectra and the light output performances before and after proton irradiations had similar trends in degradation. Then, the reverse recovery time before and after 1×10<sup>14</sup>/cm<sup>2</sup> proton irradiation slightly decreased from 31.0 to 27.6ns.

Original languageEnglish
Article number051215
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume33
Issue number5
DOIs
Publication statusPublished - 2015 Sep 1

Fingerprint

Proton irradiation
proton irradiation
Light emitting diodes
light emitting diodes
Protons
dosage
protons
output
Electroluminescence
electroluminescence
recovery
degradation
trends
Recovery
Degradation
Electric potential
electric potential
energy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Process Chemistry and Technology
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Materials Chemistry
  • Instrumentation

Cite this

Effects of 340keV proton irradiation on InGaN/GaN blue light-emitting diodes. / Kim, Byung Jae; Hwang, Ya Hsi; Ahn, Shihyun; Ren, Fan; Pearton, Stephen J.; Kim, Ji Hyun; Jang, Tae Sung.

In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 33, No. 5, 051215, 01.09.2015.

Research output: Contribution to journalArticle

Kim, Byung Jae ; Hwang, Ya Hsi ; Ahn, Shihyun ; Ren, Fan ; Pearton, Stephen J. ; Kim, Ji Hyun ; Jang, Tae Sung. / Effects of 340keV proton irradiation on InGaN/GaN blue light-emitting diodes. In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 2015 ; Vol. 33, No. 5.
@article{d592c09916f440e0896870481c11b112,
title = "Effects of 340keV proton irradiation on InGaN/GaN blue light-emitting diodes",
abstract = "The effects of proton irradiation on optical and electrical performances of InGaN/GaN blue light-emitting diodes (LEDs) were investigated. The InGaN/GaN blue LEDs were irradiated with protons at a fixed energy of 340keV and doses ranging from 5×1010 to 1×1014/cm2. Both current-voltage (I-V) and light output-current (L-I) characteristics of InGaN/GaN blue LEDs were gradually degraded as increasing the proton doses. The optical performances of LED were much more sensitive to the proton irradiation than that of electrical performances. The electroluminescence spectra and the light output performances before and after proton irradiations had similar trends in degradation. Then, the reverse recovery time before and after 1×1014/cm2 proton irradiation slightly decreased from 31.0 to 27.6ns.",
author = "Kim, {Byung Jae} and Hwang, {Ya Hsi} and Shihyun Ahn and Fan Ren and Pearton, {Stephen J.} and Kim, {Ji Hyun} and Jang, {Tae Sung}",
year = "2015",
month = "9",
day = "1",
doi = "10.1116/1.4930297",
language = "English",
volume = "33",
journal = "Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics",
issn = "2166-2746",
publisher = "AVS Science and Technology Society",
number = "5",

}

TY - JOUR

T1 - Effects of 340keV proton irradiation on InGaN/GaN blue light-emitting diodes

AU - Kim, Byung Jae

AU - Hwang, Ya Hsi

AU - Ahn, Shihyun

AU - Ren, Fan

AU - Pearton, Stephen J.

AU - Kim, Ji Hyun

AU - Jang, Tae Sung

PY - 2015/9/1

Y1 - 2015/9/1

N2 - The effects of proton irradiation on optical and electrical performances of InGaN/GaN blue light-emitting diodes (LEDs) were investigated. The InGaN/GaN blue LEDs were irradiated with protons at a fixed energy of 340keV and doses ranging from 5×1010 to 1×1014/cm2. Both current-voltage (I-V) and light output-current (L-I) characteristics of InGaN/GaN blue LEDs were gradually degraded as increasing the proton doses. The optical performances of LED were much more sensitive to the proton irradiation than that of electrical performances. The electroluminescence spectra and the light output performances before and after proton irradiations had similar trends in degradation. Then, the reverse recovery time before and after 1×1014/cm2 proton irradiation slightly decreased from 31.0 to 27.6ns.

AB - The effects of proton irradiation on optical and electrical performances of InGaN/GaN blue light-emitting diodes (LEDs) were investigated. The InGaN/GaN blue LEDs were irradiated with protons at a fixed energy of 340keV and doses ranging from 5×1010 to 1×1014/cm2. Both current-voltage (I-V) and light output-current (L-I) characteristics of InGaN/GaN blue LEDs were gradually degraded as increasing the proton doses. The optical performances of LED were much more sensitive to the proton irradiation than that of electrical performances. The electroluminescence spectra and the light output performances before and after proton irradiations had similar trends in degradation. Then, the reverse recovery time before and after 1×1014/cm2 proton irradiation slightly decreased from 31.0 to 27.6ns.

UR - http://www.scopus.com/inward/record.url?scp=84941330800&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84941330800&partnerID=8YFLogxK

U2 - 10.1116/1.4930297

DO - 10.1116/1.4930297

M3 - Article

VL - 33

JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

SN - 2166-2746

IS - 5

M1 - 051215

ER -