Effects of a low-energy proton irradiation on n+/p-AlInGaP solar cells

Haeseok Lee, M. Yamaguchi, N. J. Ekins-Daukes, A. Khan, T. Takamoto, M. Imaizumi, T. Ohshima, H. Itoh

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

For the first time, by deep-level transient spectroscopy, 30 keV proton irradiation-induced defects in n+/p-AlInGaP solar cells have been observed. After the 30 keV proton irradiation, new deep-level defects such as two majority-carrier (hole) traps HP1 (EV+0.98eV, NT=3.8×1014cm-3) and HP2, and two minority-carrier (electron) traps EP1 (EC-0.71eV, NT=2.0×1015cm-3) and EP2 have been observed in p-AlInGaP. The introduction rate of majority-carrier trap center (HP1) is 380 cm-1, which is lower than that (1500 cm-1) in 100 keV proton-irradiated p-InGaP. From the minority-carrier injection annealing for HP1 defect and carrier concentration in 30 keV proton-irradiated p-AlInGaP, HP1 defect is likely to act as a recombination center as well as a compensator center.

Original languageEnglish
Pages (from-to)564-567
Number of pages4
JournalPhysica B: Condensed Matter
Volume376-377
Issue number1
DOIs
Publication statusPublished - 2006 Apr 1
Externally publishedYes
EventProceedings of the 23rd International Conference on Defects in Semiconductors -
Duration: 2005 Jul 242005 Jul 29

Fingerprint

Proton irradiation
proton irradiation
Solar cells
solar cells
Defects
majority carriers
defects
traps
minority carriers
Protons
Hole traps
Electron traps
Deep level transient spectroscopy
protons
energy
carrier injection
compensators
Carrier concentration
Annealing
annealing

Keywords

  • Defect
  • Multijunction solar cell
  • Proton irradiation

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Lee, H., Yamaguchi, M., Ekins-Daukes, N. J., Khan, A., Takamoto, T., Imaizumi, M., ... Itoh, H. (2006). Effects of a low-energy proton irradiation on n+/p-AlInGaP solar cells. Physica B: Condensed Matter, 376-377(1), 564-567. https://doi.org/10.1016/j.physb.2005.12.142

Effects of a low-energy proton irradiation on n+/p-AlInGaP solar cells. / Lee, Haeseok; Yamaguchi, M.; Ekins-Daukes, N. J.; Khan, A.; Takamoto, T.; Imaizumi, M.; Ohshima, T.; Itoh, H.

In: Physica B: Condensed Matter, Vol. 376-377, No. 1, 01.04.2006, p. 564-567.

Research output: Contribution to journalConference article

Lee, H, Yamaguchi, M, Ekins-Daukes, NJ, Khan, A, Takamoto, T, Imaizumi, M, Ohshima, T & Itoh, H 2006, 'Effects of a low-energy proton irradiation on n+/p-AlInGaP solar cells', Physica B: Condensed Matter, vol. 376-377, no. 1, pp. 564-567. https://doi.org/10.1016/j.physb.2005.12.142
Lee H, Yamaguchi M, Ekins-Daukes NJ, Khan A, Takamoto T, Imaizumi M et al. Effects of a low-energy proton irradiation on n+/p-AlInGaP solar cells. Physica B: Condensed Matter. 2006 Apr 1;376-377(1):564-567. https://doi.org/10.1016/j.physb.2005.12.142
Lee, Haeseok ; Yamaguchi, M. ; Ekins-Daukes, N. J. ; Khan, A. ; Takamoto, T. ; Imaizumi, M. ; Ohshima, T. ; Itoh, H. / Effects of a low-energy proton irradiation on n+/p-AlInGaP solar cells. In: Physica B: Condensed Matter. 2006 ; Vol. 376-377, No. 1. pp. 564-567.
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AU - Khan, A.

AU - Takamoto, T.

AU - Imaizumi, M.

AU - Ohshima, T.

AU - Itoh, H.

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N2 - For the first time, by deep-level transient spectroscopy, 30 keV proton irradiation-induced defects in n+/p-AlInGaP solar cells have been observed. After the 30 keV proton irradiation, new deep-level defects such as two majority-carrier (hole) traps HP1 (EV+0.98eV, NT=3.8×1014cm-3) and HP2, and two minority-carrier (electron) traps EP1 (EC-0.71eV, NT=2.0×1015cm-3) and EP2 have been observed in p-AlInGaP. The introduction rate of majority-carrier trap center (HP1) is 380 cm-1, which is lower than that (1500 cm-1) in 100 keV proton-irradiated p-InGaP. From the minority-carrier injection annealing for HP1 defect and carrier concentration in 30 keV proton-irradiated p-AlInGaP, HP1 defect is likely to act as a recombination center as well as a compensator center.

AB - For the first time, by deep-level transient spectroscopy, 30 keV proton irradiation-induced defects in n+/p-AlInGaP solar cells have been observed. After the 30 keV proton irradiation, new deep-level defects such as two majority-carrier (hole) traps HP1 (EV+0.98eV, NT=3.8×1014cm-3) and HP2, and two minority-carrier (electron) traps EP1 (EC-0.71eV, NT=2.0×1015cm-3) and EP2 have been observed in p-AlInGaP. The introduction rate of majority-carrier trap center (HP1) is 380 cm-1, which is lower than that (1500 cm-1) in 100 keV proton-irradiated p-InGaP. From the minority-carrier injection annealing for HP1 defect and carrier concentration in 30 keV proton-irradiated p-AlInGaP, HP1 defect is likely to act as a recombination center as well as a compensator center.

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