Effects of a SiO2 capping layer on the electrical properties and morphology of nickel silicides

Chel Jong Choi, Young Woo Ok, Tae Yeon Seong, Hi Deok Lee

Research output: Contribution to journalArticlepeer-review

37 Citations (Scopus)


The effects of a SiO2 capping layer on the electrical and structural properties of nickel silicide have been investigated as a function of rapid-thermal-annealing temperature. X-ray diffraction results show that regardless of the capping, NiSi phase is formed when annealed at temperatures ≥400°C, while NiSi2 phase is formed at temperatures ≥700°C. For both the capped and uncapped samples, the sheet resistance increases with increasing temperature, although the former is better than the latter. It is shown that the capped samples exhibit better thermal stability than the uncapped samples. It is further shown that the reverse leakage current of the capped samples is about one order of magnitude lower than those of the uncapped ones.

Original languageEnglish
Pages (from-to)1969-1973
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number4
Publication statusPublished - 2002 Apr
Externally publishedYes


  • Junction leakage
  • Nickel silicide
  • Scanning electron microscopy
  • Sheet resistance
  • SiO capping layer
  • Transmission electron microscopy

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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