Abstract
The introduction of a thin (In)GaAs layer between an InAs quantum dot (QD) layer and an InAlGaAs layer altered the structural and optical properties of self-assembled InAsInAlGaAs QDs grown on InP (001) substrates. The emission peak of the InAs QDs on a thin In0.32 Ga0.68 As layer grown on InAlGaAs was redshifted with increasing thickness of the In0.32 Ga0.68 As layer. However, the photoluminescence (PL) peak of the InAs QDs on a thin GaAs layer grown on InAlGaAs was blueshifted with increasing thickness of the GaAs layer, and the PL yield was also drastically decreased. Although the lattice constants of both In0.32 Ga0.68 As and GaAs are smaller than that of InAlGaAs, which would be expected to have a similar type of strain modulation, the structural and optical properties of the InAs QDs were significantly different because of the different nucleation characteristics of QDs.
| Original language | English |
|---|---|
| Article number | 113526 |
| Journal | Journal of Applied Physics |
| Volume | 102 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2007 Dec 20 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Effects of a thin (In)GaAs layer on the structural and optical properties of InAsInAlGaAs quantum dots. / Kim, Jin Soo; Yang, Youngsin; Lee, Cheul Ro; Lee, In-Hwan; Yu, Yeon Tae; Ahn, Haeng Keun; Seol, Kyeong Won; Kim, Jong Su; Leem, Jae Young; Ryu, Mee Yi.
In: Journal of Applied Physics, Vol. 102, No. 11, 113526, 20.12.2007.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effects of a thin (In)GaAs layer on the structural and optical properties of InAsInAlGaAs quantum dots
AU - Kim, Jin Soo
AU - Yang, Youngsin
AU - Lee, Cheul Ro
AU - Lee, In-Hwan
AU - Yu, Yeon Tae
AU - Ahn, Haeng Keun
AU - Seol, Kyeong Won
AU - Kim, Jong Su
AU - Leem, Jae Young
AU - Ryu, Mee Yi
PY - 2007/12/20
Y1 - 2007/12/20
N2 - The introduction of a thin (In)GaAs layer between an InAs quantum dot (QD) layer and an InAlGaAs layer altered the structural and optical properties of self-assembled InAsInAlGaAs QDs grown on InP (001) substrates. The emission peak of the InAs QDs on a thin In0.32 Ga0.68 As layer grown on InAlGaAs was redshifted with increasing thickness of the In0.32 Ga0.68 As layer. However, the photoluminescence (PL) peak of the InAs QDs on a thin GaAs layer grown on InAlGaAs was blueshifted with increasing thickness of the GaAs layer, and the PL yield was also drastically decreased. Although the lattice constants of both In0.32 Ga0.68 As and GaAs are smaller than that of InAlGaAs, which would be expected to have a similar type of strain modulation, the structural and optical properties of the InAs QDs were significantly different because of the different nucleation characteristics of QDs.
AB - The introduction of a thin (In)GaAs layer between an InAs quantum dot (QD) layer and an InAlGaAs layer altered the structural and optical properties of self-assembled InAsInAlGaAs QDs grown on InP (001) substrates. The emission peak of the InAs QDs on a thin In0.32 Ga0.68 As layer grown on InAlGaAs was redshifted with increasing thickness of the In0.32 Ga0.68 As layer. However, the photoluminescence (PL) peak of the InAs QDs on a thin GaAs layer grown on InAlGaAs was blueshifted with increasing thickness of the GaAs layer, and the PL yield was also drastically decreased. Although the lattice constants of both In0.32 Ga0.68 As and GaAs are smaller than that of InAlGaAs, which would be expected to have a similar type of strain modulation, the structural and optical properties of the InAs QDs were significantly different because of the different nucleation characteristics of QDs.
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UR - http://www.scopus.com/inward/citedby.url?scp=37149005216&partnerID=8YFLogxK
U2 - 10.1063/1.2822470
DO - 10.1063/1.2822470
M3 - Article
AN - SCOPUS:37149005216
VL - 102
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 11
M1 - 113526
ER -