Effects of a thin (In)GaAs layer on the structural and optical properties of InAsInAlGaAs quantum dots

Jin Soo Kim; Youngsin Yang; Cheul Ro Lee; In Hwan Lee; Yeon Tae Yu; Haeng Keun Ahn; Kyeong Won Seol; Jong Su Kim; Jae Young Leem; Mee Yi Ryu

doi:10.1063/1.2822470

Effects of a thin (In)GaAs layer on the structural and optical properties of InAsInAlGaAs quantum dots

Jin Soo Kim, Youngsin Yang, Cheul Ro Lee, In Hwan Lee, Yeon Tae Yu, Haeng Keun Ahn, Kyeong Won Seol, Jong Su Kim, Jae Young Leem, Mee Yi Ryu

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The introduction of a thin (In)GaAs layer between an InAs quantum dot (QD) layer and an InAlGaAs layer altered the structural and optical properties of self-assembled InAsInAlGaAs QDs grown on InP (001) substrates. The emission peak of the InAs QDs on a thin In0.32 Ga0.68 As layer grown on InAlGaAs was redshifted with increasing thickness of the In0.32 Ga0.68 As layer. However, the photoluminescence (PL) peak of the InAs QDs on a thin GaAs layer grown on InAlGaAs was blueshifted with increasing thickness of the GaAs layer, and the PL yield was also drastically decreased. Although the lattice constants of both In0.32 Ga0.68 As and GaAs are smaller than that of InAlGaAs, which would be expected to have a similar type of strain modulation, the structural and optical properties of the InAs QDs were significantly different because of the different nucleation characteristics of QDs.

Original language	English
Article number	113526
Journal	Journal of Applied Physics
Volume	102
Issue number	11
DOIs	https://doi.org/10.1063/1.2822470
Publication status	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.2822470

Cite this

@article{2b201ba035964312b7f7de0bac10ba28,

title = "Effects of a thin (In)GaAs layer on the structural and optical properties of InAsInAlGaAs quantum dots",

abstract = "The introduction of a thin (In)GaAs layer between an InAs quantum dot (QD) layer and an InAlGaAs layer altered the structural and optical properties of self-assembled InAsInAlGaAs QDs grown on InP (001) substrates. The emission peak of the InAs QDs on a thin In0.32 Ga0.68 As layer grown on InAlGaAs was redshifted with increasing thickness of the In0.32 Ga0.68 As layer. However, the photoluminescence (PL) peak of the InAs QDs on a thin GaAs layer grown on InAlGaAs was blueshifted with increasing thickness of the GaAs layer, and the PL yield was also drastically decreased. Although the lattice constants of both In0.32 Ga0.68 As and GaAs are smaller than that of InAlGaAs, which would be expected to have a similar type of strain modulation, the structural and optical properties of the InAs QDs were significantly different because of the different nucleation characteristics of QDs.",

author = "Kim, {Jin Soo} and Youngsin Yang and Lee, {Cheul Ro} and Lee, {In Hwan} and Yu, {Yeon Tae} and Ahn, {Haeng Keun} and Seol, {Kyeong Won} and Kim, {Jong Su} and Leem, {Jae Young} and Ryu, {Mee Yi}",

note = "Funding Information: This work was supported in part by research funds of Chonbuk National University in 2006 (NP-2006-105897001), in part by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD, Basic Research Promotion Fund) (KRF-2007-331-D00246), and in part by the research fund of the Small and Medium Business Administration (00025011).",

year = "2007",

doi = "10.1063/1.2822470",

language = "English",

volume = "102",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "11",

}

TY - JOUR

T1 - Effects of a thin (In)GaAs layer on the structural and optical properties of InAsInAlGaAs quantum dots

AU - Kim, Jin Soo

AU - Yang, Youngsin

AU - Lee, Cheul Ro

AU - Lee, In Hwan

AU - Yu, Yeon Tae

AU - Ahn, Haeng Keun

AU - Seol, Kyeong Won

AU - Kim, Jong Su

AU - Leem, Jae Young

AU - Ryu, Mee Yi

N1 - Funding Information: This work was supported in part by research funds of Chonbuk National University in 2006 (NP-2006-105897001), in part by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD, Basic Research Promotion Fund) (KRF-2007-331-D00246), and in part by the research fund of the Small and Medium Business Administration (00025011).

PY - 2007

Y1 - 2007

N2 - The introduction of a thin (In)GaAs layer between an InAs quantum dot (QD) layer and an InAlGaAs layer altered the structural and optical properties of self-assembled InAsInAlGaAs QDs grown on InP (001) substrates. The emission peak of the InAs QDs on a thin In0.32 Ga0.68 As layer grown on InAlGaAs was redshifted with increasing thickness of the In0.32 Ga0.68 As layer. However, the photoluminescence (PL) peak of the InAs QDs on a thin GaAs layer grown on InAlGaAs was blueshifted with increasing thickness of the GaAs layer, and the PL yield was also drastically decreased. Although the lattice constants of both In0.32 Ga0.68 As and GaAs are smaller than that of InAlGaAs, which would be expected to have a similar type of strain modulation, the structural and optical properties of the InAs QDs were significantly different because of the different nucleation characteristics of QDs.

AB - The introduction of a thin (In)GaAs layer between an InAs quantum dot (QD) layer and an InAlGaAs layer altered the structural and optical properties of self-assembled InAsInAlGaAs QDs grown on InP (001) substrates. The emission peak of the InAs QDs on a thin In0.32 Ga0.68 As layer grown on InAlGaAs was redshifted with increasing thickness of the In0.32 Ga0.68 As layer. However, the photoluminescence (PL) peak of the InAs QDs on a thin GaAs layer grown on InAlGaAs was blueshifted with increasing thickness of the GaAs layer, and the PL yield was also drastically decreased. Although the lattice constants of both In0.32 Ga0.68 As and GaAs are smaller than that of InAlGaAs, which would be expected to have a similar type of strain modulation, the structural and optical properties of the InAs QDs were significantly different because of the different nucleation characteristics of QDs.

UR - http://www.scopus.com/inward/record.url?scp=37149005216&partnerID=8YFLogxK

U2 - 10.1063/1.2822470

DO - 10.1063/1.2822470

M3 - Article

AN - SCOPUS:37149005216

VL - 102

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 11

M1 - 113526

ER -

Effects of a thin (In)GaAs layer on the structural and optical properties of InAsInAlGaAs quantum dots

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this