Effects of Al content on the electrical properties of LaxAl yOz films grown on TiN substrate by atomic layer deposition

Su Young Kim, Hyuk Kwon, Sang Jin Jo, Jeong Sook Ha, Won Tae Park, Dong Kyun Kang, Byong Ho Kim

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The effects of Al content on the electrical properties of Lax Aly Oz films grown on TiN substrate by atomic layer deposition technique were investigated. With increasing Al content, the leakage current characteristics improved, but the dielectric constant became smaller. Postannealing of the films at temperatures up to 500 °C reduced the leakage current density due to thermal stabilization by the addition of Al. For the 25-nm -thick La2.4 Al O3.3 film, the authors obtained a dielectric constant of 22 and a leakage current density of 10-7 A cm2 at 1 V after postannealing at 450 °C, which gives an equivalent oxide thickness of 3.8 nm.

Original languageEnglish
Article number103104
JournalApplied Physics Letters
Volume90
Issue number10
DOIs
Publication statusPublished - 2007 Mar 16

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atomic layer epitaxy
leakage
electrical properties
permittivity
current density
stabilization
oxides
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Effects of Al content on the electrical properties of LaxAl yOz films grown on TiN substrate by atomic layer deposition. / Kim, Su Young; Kwon, Hyuk; Jo, Sang Jin; Ha, Jeong Sook; Park, Won Tae; Kang, Dong Kyun; Kim, Byong Ho.

In: Applied Physics Letters, Vol. 90, No. 10, 103104, 16.03.2007.

Research output: Contribution to journalArticle

Kim, Su Young ; Kwon, Hyuk ; Jo, Sang Jin ; Ha, Jeong Sook ; Park, Won Tae ; Kang, Dong Kyun ; Kim, Byong Ho. / Effects of Al content on the electrical properties of LaxAl yOz films grown on TiN substrate by atomic layer deposition. In: Applied Physics Letters. 2007 ; Vol. 90, No. 10.
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