NiO films were grown on a Pt substrate by radio frequency (RF) magnetron sputtering using a NiO ceramic target. A crystalline NiO phase with the  preferred orientation was formed for the films grown above 100 °C. Resistance switching behavior was not observed in the NiO films annealed in the air or in ambient O2 after film deposition. However, the NiO films annealed in ambient N2 exhibited resistance switching properties. The stability of the switching voltage was considerably influenced by the oxygen to argon ratio during film growth. In particular, the NiO film grown under an 8.0 mTorr oxygen partial pressure exhibited stabilized switching voltages (V set ∼ 1:45 ± 0:20 V and Vreset ∼ 0:62 ± 0:09 V). Therefore, the control of the ambient gas pressure during the growth and annealing of the NiO films was important for obtaining good resistance switching properties.
|Journal||Japanese journal of applied physics|
|Publication status||Published - 2010 Dec|
ASJC Scopus subject areas
- Physics and Astronomy(all)