Effects of annealing in oxygen on electrical properties of AlGaN/GaN heterostructures grown on Si

A. Y. Polyakov, N. B. Smirnov, Min Woo Ha, Cheol Koo Hahn, E. A. Kozhukhova, A. V. Govorkov, R. V. Ryzhuk, N. I. Kargin, Han Su Cho, In-Hwan Lee

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We investigated the effects of oxygen annealing on electrical characteristics of AlGaN/GaN heterostructures grown on Si by metalorganic chemical vapor deposition. It was shown that such treatment suppresses parasitic tunneling leakage current due to surface states or dislocations, decreases the threshold voltage corresponding to depletion of the two-dimensional electron gas at the AlGaN interface, and increases the effective interdevice isolation resistance. The suppression of the leakage current is explained by oxygen passivation of the empty states at the surface of the AlGaN barrier. Oxygen diffusion along dislocations and passivation of dislocation related states also could play a role. The decreased threshold voltage is attributed to the increased concentration of possibly oxygen related deep traps near the AlGaN/GaN interface. The increase in the GaN buffer resistivity after annealing is ascribed to the annihilation of the 0.38 eV deep electron traps believed to be introduced at the surface of GaN during mesa formation by dry etching.

Original languageEnglish
Pages (from-to)17-23
Number of pages7
JournalJournal of Alloys and Compounds
Volume575
DOIs
Publication statusPublished - 2013 Jan 1
Externally publishedYes

Fingerprint

Heterojunctions
Electric properties
Annealing
Oxygen
Threshold voltage
Passivation
Leakage currents
Electron traps
Dry etching
Two dimensional electron gas
Metallorganic chemical vapor deposition
Surface states
Dislocations (crystals)
Buffers
aluminum gallium nitride

Keywords

  • AlGaN/GaN HEMT
  • Deep traps
  • Leakage current
  • Oxygen annealing

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Cite this

Effects of annealing in oxygen on electrical properties of AlGaN/GaN heterostructures grown on Si. / Polyakov, A. Y.; Smirnov, N. B.; Ha, Min Woo; Hahn, Cheol Koo; Kozhukhova, E. A.; Govorkov, A. V.; Ryzhuk, R. V.; Kargin, N. I.; Cho, Han Su; Lee, In-Hwan.

In: Journal of Alloys and Compounds, Vol. 575, 01.01.2013, p. 17-23.

Research output: Contribution to journalArticle

Polyakov, AY, Smirnov, NB, Ha, MW, Hahn, CK, Kozhukhova, EA, Govorkov, AV, Ryzhuk, RV, Kargin, NI, Cho, HS & Lee, I-H 2013, 'Effects of annealing in oxygen on electrical properties of AlGaN/GaN heterostructures grown on Si', Journal of Alloys and Compounds, vol. 575, pp. 17-23. https://doi.org/10.1016/j.jallcom.2013.04.020
Polyakov, A. Y. ; Smirnov, N. B. ; Ha, Min Woo ; Hahn, Cheol Koo ; Kozhukhova, E. A. ; Govorkov, A. V. ; Ryzhuk, R. V. ; Kargin, N. I. ; Cho, Han Su ; Lee, In-Hwan. / Effects of annealing in oxygen on electrical properties of AlGaN/GaN heterostructures grown on Si. In: Journal of Alloys and Compounds. 2013 ; Vol. 575. pp. 17-23.
@article{17aacef086644ce9860fb82f4b8ac3a2,
title = "Effects of annealing in oxygen on electrical properties of AlGaN/GaN heterostructures grown on Si",
abstract = "We investigated the effects of oxygen annealing on electrical characteristics of AlGaN/GaN heterostructures grown on Si by metalorganic chemical vapor deposition. It was shown that such treatment suppresses parasitic tunneling leakage current due to surface states or dislocations, decreases the threshold voltage corresponding to depletion of the two-dimensional electron gas at the AlGaN interface, and increases the effective interdevice isolation resistance. The suppression of the leakage current is explained by oxygen passivation of the empty states at the surface of the AlGaN barrier. Oxygen diffusion along dislocations and passivation of dislocation related states also could play a role. The decreased threshold voltage is attributed to the increased concentration of possibly oxygen related deep traps near the AlGaN/GaN interface. The increase in the GaN buffer resistivity after annealing is ascribed to the annihilation of the 0.38 eV deep electron traps believed to be introduced at the surface of GaN during mesa formation by dry etching.",
keywords = "AlGaN/GaN HEMT, Deep traps, Leakage current, Oxygen annealing",
author = "Polyakov, {A. Y.} and Smirnov, {N. B.} and Ha, {Min Woo} and Hahn, {Cheol Koo} and Kozhukhova, {E. A.} and Govorkov, {A. V.} and Ryzhuk, {R. V.} and Kargin, {N. I.} and Cho, {Han Su} and In-Hwan Lee",
year = "2013",
month = "1",
day = "1",
doi = "10.1016/j.jallcom.2013.04.020",
language = "English",
volume = "575",
pages = "17--23",
journal = "Journal of Alloys and Compounds",
issn = "0925-8388",
publisher = "Elsevier BV",

}

TY - JOUR

T1 - Effects of annealing in oxygen on electrical properties of AlGaN/GaN heterostructures grown on Si

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Ha, Min Woo

AU - Hahn, Cheol Koo

AU - Kozhukhova, E. A.

AU - Govorkov, A. V.

AU - Ryzhuk, R. V.

AU - Kargin, N. I.

AU - Cho, Han Su

AU - Lee, In-Hwan

PY - 2013/1/1

Y1 - 2013/1/1

N2 - We investigated the effects of oxygen annealing on electrical characteristics of AlGaN/GaN heterostructures grown on Si by metalorganic chemical vapor deposition. It was shown that such treatment suppresses parasitic tunneling leakage current due to surface states or dislocations, decreases the threshold voltage corresponding to depletion of the two-dimensional electron gas at the AlGaN interface, and increases the effective interdevice isolation resistance. The suppression of the leakage current is explained by oxygen passivation of the empty states at the surface of the AlGaN barrier. Oxygen diffusion along dislocations and passivation of dislocation related states also could play a role. The decreased threshold voltage is attributed to the increased concentration of possibly oxygen related deep traps near the AlGaN/GaN interface. The increase in the GaN buffer resistivity after annealing is ascribed to the annihilation of the 0.38 eV deep electron traps believed to be introduced at the surface of GaN during mesa formation by dry etching.

AB - We investigated the effects of oxygen annealing on electrical characteristics of AlGaN/GaN heterostructures grown on Si by metalorganic chemical vapor deposition. It was shown that such treatment suppresses parasitic tunneling leakage current due to surface states or dislocations, decreases the threshold voltage corresponding to depletion of the two-dimensional electron gas at the AlGaN interface, and increases the effective interdevice isolation resistance. The suppression of the leakage current is explained by oxygen passivation of the empty states at the surface of the AlGaN barrier. Oxygen diffusion along dislocations and passivation of dislocation related states also could play a role. The decreased threshold voltage is attributed to the increased concentration of possibly oxygen related deep traps near the AlGaN/GaN interface. The increase in the GaN buffer resistivity after annealing is ascribed to the annihilation of the 0.38 eV deep electron traps believed to be introduced at the surface of GaN during mesa formation by dry etching.

KW - AlGaN/GaN HEMT

KW - Deep traps

KW - Leakage current

KW - Oxygen annealing

UR - http://www.scopus.com/inward/record.url?scp=84877090601&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84877090601&partnerID=8YFLogxK

U2 - 10.1016/j.jallcom.2013.04.020

DO - 10.1016/j.jallcom.2013.04.020

M3 - Article

VL - 575

SP - 17

EP - 23

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

SN - 0925-8388

ER -