Abstract
Effects of annealing on the properties of P- and B-implanted Si for interdigitated back contact (IBC) solar cells were investigated with annealing temperature of from 950 to 1050 °C. P-implanted samples annealed at 950 °C were enough to activate dopants and recover the damage by implantation. As the annealing temperature was increased, the diode properties of P-implanted samples were degraded, while that of B-implanted samples were improved. However, in order to activate an implanted B ion, B-implanted samples needed an annealing of above 1000 °C. The implied V oc of lifetime samples by quasi-steady-state photoconductance decay followed the trend of diode properties on annealing temperature. Finally, IBC cell was fabricated with a two-step annealing at 1050 °C for B of the emitter and 950 °C for P of the front and back surface fields. The IBC cell had V oc of 618 mV, J sc of 35.1 mA/cm 2, FF of 78.8%, and the efficiency of 17.1% without surface texturing.
Original language | English |
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Pages (from-to) | 1615-1618 |
Number of pages | 4 |
Journal | Current Applied Physics |
Volume | 12 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2012 Nov |
Keywords
- Annealing
- Implantation
- Interdigitated back contact
- Si solar cell
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)