Effects of annealing on ion-implanted Si for interdigitated back contact solar cell

Min Gu Kang; Jong Han Lee; Hyunpil Boo; Sung Ju Tark; Hae Chul Hwang; Wook Jung Hwang; Hee Oh Kang; Donghwan Kim

doi:10.1016/j.cap.2012.05.035

Effects of annealing on ion-implanted Si for interdigitated back contact solar cell

Min Gu Kang, Jong Han Lee, Hyunpil Boo, Sung Ju Tark, Hae Chul Hwang, Wook Jung Hwang, Hee Oh Kang, Donghwan Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Effects of annealing on the properties of P- and B-implanted Si for interdigitated back contact (IBC) solar cells were investigated with annealing temperature of from 950 to 1050 °C. P-implanted samples annealed at 950 °C were enough to activate dopants and recover the damage by implantation. As the annealing temperature was increased, the diode properties of P-implanted samples were degraded, while that of B-implanted samples were improved. However, in order to activate an implanted B ion, B-implanted samples needed an annealing of above 1000 °C. The implied V _oc of lifetime samples by quasi-steady-state photoconductance decay followed the trend of diode properties on annealing temperature. Finally, IBC cell was fabricated with a two-step annealing at 1050 °C for B of the emitter and 950 °C for P of the front and back surface fields. The IBC cell had V _oc of 618 mV, J _sc of 35.1 mA/cm ², FF of 78.8%, and the efficiency of 17.1% without surface texturing.

Original language	English
Pages (from-to)	1615-1618
Number of pages	4
Journal	Current Applied Physics
Volume	12
Issue number	6
DOIs	https://doi.org/10.1016/j.cap.2012.05.035
Publication status	Published - 2012 Nov

Keywords

Annealing
Implantation
Interdigitated back contact
Si solar cell

ASJC Scopus subject areas

Materials Science(all)
Physics and Astronomy(all)

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title = "Effects of annealing on ion-implanted Si for interdigitated back contact solar cell",

abstract = "Effects of annealing on the properties of P- and B-implanted Si for interdigitated back contact (IBC) solar cells were investigated with annealing temperature of from 950 to 1050 °C. P-implanted samples annealed at 950 °C were enough to activate dopants and recover the damage by implantation. As the annealing temperature was increased, the diode properties of P-implanted samples were degraded, while that of B-implanted samples were improved. However, in order to activate an implanted B ion, B-implanted samples needed an annealing of above 1000 °C. The implied V oc of lifetime samples by quasi-steady-state photoconductance decay followed the trend of diode properties on annealing temperature. Finally, IBC cell was fabricated with a two-step annealing at 1050 °C for B of the emitter and 950 °C for P of the front and back surface fields. The IBC cell had V oc of 618 mV, J sc of 35.1 mA/cm 2, FF of 78.8%, and the efficiency of 17.1% without surface texturing.",

keywords = "Annealing, Implantation, Interdigitated back contact, Si solar cell",

author = "Kang, {Min Gu} and Lee, {Jong Han} and Hyunpil Boo and Tark, {Sung Ju} and Hwang, {Hae Chul} and Hwang, {Wook Jung} and Kang, {Hee Oh} and Donghwan Kim",

note = "Funding Information: This work was supported by the New & Renewable Energy of the Korea Institute of Energy Technology Evaluation and Planning(KETEP) grant funded by the Korea government Ministry of Knowledge Economy (No. 2009301001001B ), and by the Human Resources Development of the Korea Institute of Energy Technology Evaluation and Planning(KETEP) grant funded by the Ministry of Knowledge Economy, Republic of Korea (No. 20104010100640 ). And this work was supported by the Korea University Grant . Copyright: Copyright 2012 Elsevier B.V., All rights reserved.",

year = "2012",

month = nov,

doi = "10.1016/j.cap.2012.05.035",

language = "English",

volume = "12",

pages = "1615--1618",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier",

number = "6",

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TY - JOUR

T1 - Effects of annealing on ion-implanted Si for interdigitated back contact solar cell

AU - Kang, Min Gu

AU - Lee, Jong Han

AU - Boo, Hyunpil

AU - Tark, Sung Ju

AU - Hwang, Hae Chul

AU - Hwang, Wook Jung

AU - Kang, Hee Oh

AU - Kim, Donghwan

N1 - Funding Information: This work was supported by the New & Renewable Energy of the Korea Institute of Energy Technology Evaluation and Planning(KETEP) grant funded by the Korea government Ministry of Knowledge Economy (No. 2009301001001B ), and by the Human Resources Development of the Korea Institute of Energy Technology Evaluation and Planning(KETEP) grant funded by the Ministry of Knowledge Economy, Republic of Korea (No. 20104010100640 ). And this work was supported by the Korea University Grant . Copyright: Copyright 2012 Elsevier B.V., All rights reserved.

PY - 2012/11

Y1 - 2012/11

N2 - Effects of annealing on the properties of P- and B-implanted Si for interdigitated back contact (IBC) solar cells were investigated with annealing temperature of from 950 to 1050 °C. P-implanted samples annealed at 950 °C were enough to activate dopants and recover the damage by implantation. As the annealing temperature was increased, the diode properties of P-implanted samples were degraded, while that of B-implanted samples were improved. However, in order to activate an implanted B ion, B-implanted samples needed an annealing of above 1000 °C. The implied V oc of lifetime samples by quasi-steady-state photoconductance decay followed the trend of diode properties on annealing temperature. Finally, IBC cell was fabricated with a two-step annealing at 1050 °C for B of the emitter and 950 °C for P of the front and back surface fields. The IBC cell had V oc of 618 mV, J sc of 35.1 mA/cm 2, FF of 78.8%, and the efficiency of 17.1% without surface texturing.

AB - Effects of annealing on the properties of P- and B-implanted Si for interdigitated back contact (IBC) solar cells were investigated with annealing temperature of from 950 to 1050 °C. P-implanted samples annealed at 950 °C were enough to activate dopants and recover the damage by implantation. As the annealing temperature was increased, the diode properties of P-implanted samples were degraded, while that of B-implanted samples were improved. However, in order to activate an implanted B ion, B-implanted samples needed an annealing of above 1000 °C. The implied V oc of lifetime samples by quasi-steady-state photoconductance decay followed the trend of diode properties on annealing temperature. Finally, IBC cell was fabricated with a two-step annealing at 1050 °C for B of the emitter and 950 °C for P of the front and back surface fields. The IBC cell had V oc of 618 mV, J sc of 35.1 mA/cm 2, FF of 78.8%, and the efficiency of 17.1% without surface texturing.

KW - Annealing

KW - Implantation

KW - Interdigitated back contact

KW - Si solar cell

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JF - Current Applied Physics

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ER -

Effects of annealing on ion-implanted Si for interdigitated back contact solar cell

Abstract

Keywords

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