Effects of annealing on ion-implanted Si for interdigitated back contact solar cell

Min Gu Kang, Jong Han Lee, Hyunpil Boo, Sung Ju Tark, Hae Chul Hwang, Wook Jung Hwang, Hee Oh Kang, Donghwan Kim

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11 Citations (Scopus)

Abstract

Effects of annealing on the properties of P- and B-implanted Si for interdigitated back contact (IBC) solar cells were investigated with annealing temperature of from 950 to 1050 °C. P-implanted samples annealed at 950 °C were enough to activate dopants and recover the damage by implantation. As the annealing temperature was increased, the diode properties of P-implanted samples were degraded, while that of B-implanted samples were improved. However, in order to activate an implanted B ion, B-implanted samples needed an annealing of above 1000 °C. The implied V oc of lifetime samples by quasi-steady-state photoconductance decay followed the trend of diode properties on annealing temperature. Finally, IBC cell was fabricated with a two-step annealing at 1050 °C for B of the emitter and 950 °C for P of the front and back surface fields. The IBC cell had V oc of 618 mV, J sc of 35.1 mA/cm 2, FF of 78.8%, and the efficiency of 17.1% without surface texturing.

Original languageEnglish
Pages (from-to)1615-1618
Number of pages4
JournalCurrent Applied Physics
Volume12
Issue number6
DOIs
Publication statusPublished - 2012 Nov

Keywords

  • Annealing
  • Implantation
  • Interdigitated back contact
  • Si solar cell

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

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    Kang, M. G., Lee, J. H., Boo, H., Tark, S. J., Hwang, H. C., Hwang, W. J., Kang, H. O., & Kim, D. (2012). Effects of annealing on ion-implanted Si for interdigitated back contact solar cell. Current Applied Physics, 12(6), 1615-1618. https://doi.org/10.1016/j.cap.2012.05.035