Effects of annealing on ion-implanted Si for interdigitated back contact solar cell

Min Gu Kang, Jong Han Lee, Hyunpil Boo, Sung Ju Tark, Hae Chul Hwang, Wook Jung Hwang, Hee Oh Kang, Donghwan Kim

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Effects of annealing on the properties of P- and B-implanted Si for interdigitated back contact (IBC) solar cells were investigated with annealing temperature of from 950 to 1050 °C. P-implanted samples annealed at 950 °C were enough to activate dopants and recover the damage by implantation. As the annealing temperature was increased, the diode properties of P-implanted samples were degraded, while that of B-implanted samples were improved. However, in order to activate an implanted B ion, B-implanted samples needed an annealing of above 1000 °C. The implied V oc of lifetime samples by quasi-steady-state photoconductance decay followed the trend of diode properties on annealing temperature. Finally, IBC cell was fabricated with a two-step annealing at 1050 °C for B of the emitter and 950 °C for P of the front and back surface fields. The IBC cell had V oc of 618 mV, J sc of 35.1 mA/cm 2, FF of 78.8%, and the efficiency of 17.1% without surface texturing.

Original languageEnglish
Pages (from-to)1615-1618
Number of pages4
JournalCurrent Applied Physics
Volume12
Issue number6
DOIs
Publication statusPublished - 2012 Nov 1

Fingerprint

Solar cells
solar cells
Annealing
Ions
annealing
ions
Diodes
diodes
quasi-steady states
Texturing
cells
Ion implantation
Temperature
temperature
implantation
emitters
Doping (additives)
damage
trends
life (durability)

Keywords

  • Annealing
  • Implantation
  • Interdigitated back contact
  • Si solar cell

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Effects of annealing on ion-implanted Si for interdigitated back contact solar cell. / Kang, Min Gu; Lee, Jong Han; Boo, Hyunpil; Tark, Sung Ju; Hwang, Hae Chul; Hwang, Wook Jung; Kang, Hee Oh; Kim, Donghwan.

In: Current Applied Physics, Vol. 12, No. 6, 01.11.2012, p. 1615-1618.

Research output: Contribution to journalArticle

Kang, MG, Lee, JH, Boo, H, Tark, SJ, Hwang, HC, Hwang, WJ, Kang, HO & Kim, D 2012, 'Effects of annealing on ion-implanted Si for interdigitated back contact solar cell', Current Applied Physics, vol. 12, no. 6, pp. 1615-1618. https://doi.org/10.1016/j.cap.2012.05.035
Kang, Min Gu ; Lee, Jong Han ; Boo, Hyunpil ; Tark, Sung Ju ; Hwang, Hae Chul ; Hwang, Wook Jung ; Kang, Hee Oh ; Kim, Donghwan. / Effects of annealing on ion-implanted Si for interdigitated back contact solar cell. In: Current Applied Physics. 2012 ; Vol. 12, No. 6. pp. 1615-1618.
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AB - Effects of annealing on the properties of P- and B-implanted Si for interdigitated back contact (IBC) solar cells were investigated with annealing temperature of from 950 to 1050 °C. P-implanted samples annealed at 950 °C were enough to activate dopants and recover the damage by implantation. As the annealing temperature was increased, the diode properties of P-implanted samples were degraded, while that of B-implanted samples were improved. However, in order to activate an implanted B ion, B-implanted samples needed an annealing of above 1000 °C. The implied V oc of lifetime samples by quasi-steady-state photoconductance decay followed the trend of diode properties on annealing temperature. Finally, IBC cell was fabricated with a two-step annealing at 1050 °C for B of the emitter and 950 °C for P of the front and back surface fields. The IBC cell had V oc of 618 mV, J sc of 35.1 mA/cm 2, FF of 78.8%, and the efficiency of 17.1% without surface texturing.

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