Abstract
Effects of annealing on the properties of P- and B-implanted Si for interdigitated back contact (IBC) solar cells were investigated with annealing temperature of from 950 to 1050 °C. P-implanted samples annealed at 950 °C were enough to activate dopants and recover the damage by implantation. As the annealing temperature was increased, the diode properties of P-implanted samples were degraded, while that of B-implanted samples were improved. However, in order to activate an implanted B ion, B-implanted samples needed an annealing of above 1000 °C. The implied V oc of lifetime samples by quasi-steady-state photoconductance decay followed the trend of diode properties on annealing temperature. Finally, IBC cell was fabricated with a two-step annealing at 1050 °C for B of the emitter and 950 °C for P of the front and back surface fields. The IBC cell had V oc of 618 mV, J sc of 35.1 mA/cm 2, FF of 78.8%, and the efficiency of 17.1% without surface texturing.
| Original language | English |
|---|---|
| Pages (from-to) | 1615-1618 |
| Number of pages | 4 |
| Journal | Current Applied Physics |
| Volume | 12 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2012 Nov 1 |
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Keywords
- Annealing
- Implantation
- Interdigitated back contact
- Si solar cell
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)
Cite this
Effects of annealing on ion-implanted Si for interdigitated back contact solar cell. / Kang, Min Gu; Lee, Jong Han; Boo, Hyunpil; Tark, Sung Ju; Hwang, Hae Chul; Hwang, Wook Jung; Kang, Hee Oh; Kim, Donghwan.
In: Current Applied Physics, Vol. 12, No. 6, 01.11.2012, p. 1615-1618.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effects of annealing on ion-implanted Si for interdigitated back contact solar cell
AU - Kang, Min Gu
AU - Lee, Jong Han
AU - Boo, Hyunpil
AU - Tark, Sung Ju
AU - Hwang, Hae Chul
AU - Hwang, Wook Jung
AU - Kang, Hee Oh
AU - Kim, Donghwan
PY - 2012/11/1
Y1 - 2012/11/1
N2 - Effects of annealing on the properties of P- and B-implanted Si for interdigitated back contact (IBC) solar cells were investigated with annealing temperature of from 950 to 1050 °C. P-implanted samples annealed at 950 °C were enough to activate dopants and recover the damage by implantation. As the annealing temperature was increased, the diode properties of P-implanted samples were degraded, while that of B-implanted samples were improved. However, in order to activate an implanted B ion, B-implanted samples needed an annealing of above 1000 °C. The implied V oc of lifetime samples by quasi-steady-state photoconductance decay followed the trend of diode properties on annealing temperature. Finally, IBC cell was fabricated with a two-step annealing at 1050 °C for B of the emitter and 950 °C for P of the front and back surface fields. The IBC cell had V oc of 618 mV, J sc of 35.1 mA/cm 2, FF of 78.8%, and the efficiency of 17.1% without surface texturing.
AB - Effects of annealing on the properties of P- and B-implanted Si for interdigitated back contact (IBC) solar cells were investigated with annealing temperature of from 950 to 1050 °C. P-implanted samples annealed at 950 °C were enough to activate dopants and recover the damage by implantation. As the annealing temperature was increased, the diode properties of P-implanted samples were degraded, while that of B-implanted samples were improved. However, in order to activate an implanted B ion, B-implanted samples needed an annealing of above 1000 °C. The implied V oc of lifetime samples by quasi-steady-state photoconductance decay followed the trend of diode properties on annealing temperature. Finally, IBC cell was fabricated with a two-step annealing at 1050 °C for B of the emitter and 950 °C for P of the front and back surface fields. The IBC cell had V oc of 618 mV, J sc of 35.1 mA/cm 2, FF of 78.8%, and the efficiency of 17.1% without surface texturing.
KW - Annealing
KW - Implantation
KW - Interdigitated back contact
KW - Si solar cell
UR - http://www.scopus.com/inward/record.url?scp=84863983786&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84863983786&partnerID=8YFLogxK
U2 - 10.1016/j.cap.2012.05.035
DO - 10.1016/j.cap.2012.05.035
M3 - Article
AN - SCOPUS:84863983786
VL - 12
SP - 1615
EP - 1618
JO - Current Applied Physics
JF - Current Applied Physics
SN - 1567-1739
IS - 6
ER -