Effects of annealing process on dielectric properties of (Ba,Sr)TiO 3 thin films grown by RF magnetron sputtering

Jong Yoon Ha, Ji Won Choi, Chong Yun Kang, S. F. Karmanenko, Seok Jin Yoon, Doo Jin Choi, Hyun Jai Kim

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4 Citations (Scopus)


Single phase thin films of (Ba0.5Sr0.5)TiO 3 have been prepared by single target RF magnetron sputtering. Through post-annealing process in box furnace at 1100°C for 1 h, we have been able to improve the dielectric properties; dielectric permittivity, dielectric loss, and tunability. The change in dielectric properties before and after post-annealing is attributed to the change in film strain and the contraction in film lattice.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number37-41
Publication statusPublished - 2005 Sep 30
Externally publishedYes



  • BST
  • Ferroelectric
  • Microwave
  • RF sputtering
  • Tunable devices

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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