Effects of Ar/O2 gas ratio on ZnO films prepared by using Ion beam deposition

Myoung Kim, Ju Won Jeon, Dae Woo Jeon, Trilochan Sahoo, Mi Hee Lee, Ru Da Lee, Lee Woon Jang, Jin Woo Ju, In-Hwan Lee, Young Je Jo, Joon Seop Kwak

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1 Citation (Scopus)

Abstract

ZnO films were grown on (0001) sapphire substrates by using ion beam deposition. The effects of Ar/O2 gas ratio in the ion gun on the properties of the ZnO films were investigated. The films were deposited using various Ar/O2 gas ratios at room temperature (RT) and 400 °C. All the ZnO films grown at RT showed a smooth and homogeneous surface with compressive strain. For an Ar/O2 gas ratio of 7/3, the ZnO film showed the lowest surface roughness and strain among the samples. At a higher substrate temperature of 400 °C, the morphologies and the structural properties were more sensitive to the Ar/O2 gas ratios. Photoluminescence measurements showed that the samples deposited at RT exhibited strong deep level emissions in the visible range and near band edge emissions. On the other hand, the films prepared at 400 °C displayed weaker defectrelated emissions. The present work suggests that the Ar/O2 gas ratio affects the stoichiometry and, thus, the structural and optical properties of the ZnO films.

Original languageEnglish
Pages (from-to)1871-1874
Number of pages4
JournalJournal of the Korean Physical Society
Volume57
Issue number61
DOIs
Publication statusPublished - 2010 Dec 1
Externally publishedYes

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Keywords

  • Gas ratio
  • Ion beam deposition
  • Photoluminescence
  • ZnO

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Kim, M., Jeon, J. W., Jeon, D. W., Sahoo, T., Lee, M. H., Lee, R. D., Jang, L. W., Ju, J. W., Lee, I-H., Jo, Y. J., & Kwak, J. S. (2010). Effects of Ar/O2 gas ratio on ZnO films prepared by using Ion beam deposition. Journal of the Korean Physical Society, 57(61), 1871-1874. https://doi.org/10.3938/jkps.57.1871