Effects of channel doping profile on electrical characteristics of impact ionization MOS

Sang Joon Hwang, Jee Young Yoon, Ey Goo Kang, Man Young Sung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publication2005 International Semiconductor Device Research Symposium
Pages103-104
Number of pages2
Publication statusPublished - 2005
Event2005 International Semiconductor Device Research Symposium - Bethesda, MD, United States
Duration: 2005 Dec 72005 Dec 9

Publication series

Name2005 International Semiconductor Device Research Symposium
Volume2005

Other

Other2005 International Semiconductor Device Research Symposium
CountryUnited States
CityBethesda, MD
Period05/12/705/12/9

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Hwang, S. J., Yoon, J. Y., Kang, E. G., & Sung, M. Y. (2005). Effects of channel doping profile on electrical characteristics of impact ionization MOS. In 2005 International Semiconductor Device Research Symposium (pp. 103-104). [1595999] (2005 International Semiconductor Device Research Symposium; Vol. 2005).