Effects of channel doping profile on electrical characteristics of impact ionization MOS

Sang Joon Hwang, Jee Young Yoon, Ey Goo Kang, Man Young Sung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publication2005 International Semiconductor Device Research Symposium
Pages103-104
Number of pages2
Volume2005
Publication statusPublished - 2005 Dec 1
Event2005 International Semiconductor Device Research Symposium - Bethesda, MD, United States
Duration: 2005 Dec 72005 Dec 9

Other

Other2005 International Semiconductor Device Research Symposium
CountryUnited States
CityBethesda, MD
Period05/12/705/12/9

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Impact ionization
Doping (additives)

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Hwang, S. J., Yoon, J. Y., Kang, E. G., & Sung, M. Y. (2005). Effects of channel doping profile on electrical characteristics of impact ionization MOS. In 2005 International Semiconductor Device Research Symposium (Vol. 2005, pp. 103-104). [1595999]

Effects of channel doping profile on electrical characteristics of impact ionization MOS. / Hwang, Sang Joon; Yoon, Jee Young; Kang, Ey Goo; Sung, Man Young.

2005 International Semiconductor Device Research Symposium. Vol. 2005 2005. p. 103-104 1595999.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hwang, SJ, Yoon, JY, Kang, EG & Sung, MY 2005, Effects of channel doping profile on electrical characteristics of impact ionization MOS. in 2005 International Semiconductor Device Research Symposium. vol. 2005, 1595999, pp. 103-104, 2005 International Semiconductor Device Research Symposium, Bethesda, MD, United States, 05/12/7.
Hwang SJ, Yoon JY, Kang EG, Sung MY. Effects of channel doping profile on electrical characteristics of impact ionization MOS. In 2005 International Semiconductor Device Research Symposium. Vol. 2005. 2005. p. 103-104. 1595999
Hwang, Sang Joon ; Yoon, Jee Young ; Kang, Ey Goo ; Sung, Man Young. / Effects of channel doping profile on electrical characteristics of impact ionization MOS. 2005 International Semiconductor Device Research Symposium. Vol. 2005 2005. pp. 103-104
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