Effects of channel width variation on electrical characteristics of tri-gate Junctionless transistors

Dae Young Jeon, So Jeong Park, Mireille Mouis, Sylvain Barraud, Gyu-Tae Kim, Gérard Ghibaudo

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18 Citations (Scopus)


The electrical behavior of tri-gate Junctionless transistors (JLTs) depending on top-effective width (Wtop-eff) was investigated, experimentally. As decreasing Wtop-eff, the amount of bulk neutral channel is relatively getting smaller than that of surface accumulation channel, whereas the channel sidewall gate effect is reinforced. These cause the shrinkage of the shoulder shape on the gate-to-channel capacitance characteristics (Cgc-Vg), resulting in a noticeable change in the effective mobility (μeff) behavior from that in wide JLT devices, an increase of the threshold voltage (Vth), while the flat-band voltage (Vfb) does not change. 2D numerical simulation results, well consistent to the experimental results, confirm the significant sidewall gate effect in the tri-gate JLT devices with a narrow structure.

Original languageEnglish
Pages (from-to)58-62
Number of pages5
JournalSolid-State Electronics
Publication statusPublished - 2013 Mar 12



  • 2D numerical simulation
  • Effective mobility (μ)
  • Effective width
  • Flat-band voltage (V)
  • Junctionless transistors (JLTs)
  • Sidewall gate effect
  • Threshold voltage (V)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

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