Effects of Cl 2 plasma treatment on stability, wettability, and electrical properties of ITO for OLEDs

Sun Gyu Jung, Kyung Bok Choi, Chan Hyuk Park, Yong Sub Shim, Cheol Hwee Park, Young Wook Park, Byeong Kwon Ju

Research output: Contribution to journalArticle

Abstract

We investigated various characteristics of chlorinated indium tin oxide (Cl-ITO)for highly efficient organic light-emitting diodes (OLEDs): the work function, surface morphology, wetting characteristic, and hole-injection property. Via the systematic analysis of Cl-ITO, we showed that the modification of ITO using the plasma treatment method has a simple process and offers higher stability than that achieved with a solution-based modification method. We fabricated Cl-ITO with a high work function of 6.04 eV, which is 1.04 eV higher than that of pristine ITO. We verified that Cl 2 plasma treatment does not affect the ITO surface morphology. The Cl halogenated surface showed a low surface polarity and influenced the growth of the organic material, especially for films as thin as ∼4 nm. Therefore, we found when using ultra-thin film on Cl-ITO for design devices, the wetting characteristic of Cl-ITO should be considered. In addition, using tris-(4-carbazoyl-9-ylphenyl)-amine resulted in increased current and power efficiencies compared with those obtained using 4,4′-N,N′-dicarbazolebiphenyl. When a carrier-only device was used, the carrier-injection characteristics of Cl-ITO were higher than those of other well-known hole-injection materials. Furthermore, the Cl-ITO OLEDs showed higher stability than OLEDs with other hole-injection materials.

Original languageEnglish
Pages (from-to)51-57
Number of pages7
JournalOptical Materials
Volume93
DOIs
Publication statusPublished - 2019 Jul 1

Fingerprint

Organic light emitting diodes (OLED)
wettability
ITO (semiconductors)
Tin oxides
indium oxides
Indium
tin oxides
Wetting
Electric properties
light emitting diodes
electrical properties
Plasmas
injection
wetting
Surface morphology
Ultrathin films
carrier injection
power efficiency
organic materials
indium tin oxide

Keywords

  • Cl plasma treatment
  • Indium tin oxide (ITO)
  • Organic light-emitting diodes (OLEDs)
  • Stability
  • Wettability
  • Work function

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Computer Science(all)
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Effects of Cl 2 plasma treatment on stability, wettability, and electrical properties of ITO for OLEDs . / Jung, Sun Gyu; Choi, Kyung Bok; Park, Chan Hyuk; Shim, Yong Sub; Park, Cheol Hwee; Park, Young Wook; Ju, Byeong Kwon.

In: Optical Materials, Vol. 93, 01.07.2019, p. 51-57.

Research output: Contribution to journalArticle

Jung, Sun Gyu ; Choi, Kyung Bok ; Park, Chan Hyuk ; Shim, Yong Sub ; Park, Cheol Hwee ; Park, Young Wook ; Ju, Byeong Kwon. / Effects of Cl 2 plasma treatment on stability, wettability, and electrical properties of ITO for OLEDs In: Optical Materials. 2019 ; Vol. 93. pp. 51-57.
@article{2a4cfc4d01fd4fb8a261aa088f09ed25,
title = "Effects of Cl 2 plasma treatment on stability, wettability, and electrical properties of ITO for OLEDs",
abstract = "We investigated various characteristics of chlorinated indium tin oxide (Cl-ITO)for highly efficient organic light-emitting diodes (OLEDs): the work function, surface morphology, wetting characteristic, and hole-injection property. Via the systematic analysis of Cl-ITO, we showed that the modification of ITO using the plasma treatment method has a simple process and offers higher stability than that achieved with a solution-based modification method. We fabricated Cl-ITO with a high work function of 6.04 eV, which is 1.04 eV higher than that of pristine ITO. We verified that Cl 2 plasma treatment does not affect the ITO surface morphology. The Cl halogenated surface showed a low surface polarity and influenced the growth of the organic material, especially for films as thin as ∼4 nm. Therefore, we found when using ultra-thin film on Cl-ITO for design devices, the wetting characteristic of Cl-ITO should be considered. In addition, using tris-(4-carbazoyl-9-ylphenyl)-amine resulted in increased current and power efficiencies compared with those obtained using 4,4′-N,N′-dicarbazolebiphenyl. When a carrier-only device was used, the carrier-injection characteristics of Cl-ITO were higher than those of other well-known hole-injection materials. Furthermore, the Cl-ITO OLEDs showed higher stability than OLEDs with other hole-injection materials.",
keywords = "Cl plasma treatment, Indium tin oxide (ITO), Organic light-emitting diodes (OLEDs), Stability, Wettability, Work function",
author = "Jung, {Sun Gyu} and Choi, {Kyung Bok} and Park, {Chan Hyuk} and Shim, {Yong Sub} and Park, {Cheol Hwee} and Park, {Young Wook} and Ju, {Byeong Kwon}",
year = "2019",
month = "7",
day = "1",
doi = "10.1016/j.optmat.2019.04.056",
language = "English",
volume = "93",
pages = "51--57",
journal = "Optical Materials",
issn = "0925-3467",
publisher = "Elsevier",

}

TY - JOUR

T1 - Effects of Cl 2 plasma treatment on stability, wettability, and electrical properties of ITO for OLEDs

AU - Jung, Sun Gyu

AU - Choi, Kyung Bok

AU - Park, Chan Hyuk

AU - Shim, Yong Sub

AU - Park, Cheol Hwee

AU - Park, Young Wook

AU - Ju, Byeong Kwon

PY - 2019/7/1

Y1 - 2019/7/1

N2 - We investigated various characteristics of chlorinated indium tin oxide (Cl-ITO)for highly efficient organic light-emitting diodes (OLEDs): the work function, surface morphology, wetting characteristic, and hole-injection property. Via the systematic analysis of Cl-ITO, we showed that the modification of ITO using the plasma treatment method has a simple process and offers higher stability than that achieved with a solution-based modification method. We fabricated Cl-ITO with a high work function of 6.04 eV, which is 1.04 eV higher than that of pristine ITO. We verified that Cl 2 plasma treatment does not affect the ITO surface morphology. The Cl halogenated surface showed a low surface polarity and influenced the growth of the organic material, especially for films as thin as ∼4 nm. Therefore, we found when using ultra-thin film on Cl-ITO for design devices, the wetting characteristic of Cl-ITO should be considered. In addition, using tris-(4-carbazoyl-9-ylphenyl)-amine resulted in increased current and power efficiencies compared with those obtained using 4,4′-N,N′-dicarbazolebiphenyl. When a carrier-only device was used, the carrier-injection characteristics of Cl-ITO were higher than those of other well-known hole-injection materials. Furthermore, the Cl-ITO OLEDs showed higher stability than OLEDs with other hole-injection materials.

AB - We investigated various characteristics of chlorinated indium tin oxide (Cl-ITO)for highly efficient organic light-emitting diodes (OLEDs): the work function, surface morphology, wetting characteristic, and hole-injection property. Via the systematic analysis of Cl-ITO, we showed that the modification of ITO using the plasma treatment method has a simple process and offers higher stability than that achieved with a solution-based modification method. We fabricated Cl-ITO with a high work function of 6.04 eV, which is 1.04 eV higher than that of pristine ITO. We verified that Cl 2 plasma treatment does not affect the ITO surface morphology. The Cl halogenated surface showed a low surface polarity and influenced the growth of the organic material, especially for films as thin as ∼4 nm. Therefore, we found when using ultra-thin film on Cl-ITO for design devices, the wetting characteristic of Cl-ITO should be considered. In addition, using tris-(4-carbazoyl-9-ylphenyl)-amine resulted in increased current and power efficiencies compared with those obtained using 4,4′-N,N′-dicarbazolebiphenyl. When a carrier-only device was used, the carrier-injection characteristics of Cl-ITO were higher than those of other well-known hole-injection materials. Furthermore, the Cl-ITO OLEDs showed higher stability than OLEDs with other hole-injection materials.

KW - Cl plasma treatment

KW - Indium tin oxide (ITO)

KW - Organic light-emitting diodes (OLEDs)

KW - Stability

KW - Wettability

KW - Work function

UR - http://www.scopus.com/inward/record.url?scp=85065518607&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85065518607&partnerID=8YFLogxK

U2 - 10.1016/j.optmat.2019.04.056

DO - 10.1016/j.optmat.2019.04.056

M3 - Article

VL - 93

SP - 51

EP - 57

JO - Optical Materials

JF - Optical Materials

SN - 0925-3467

ER -