Abstract
We investigated various characteristics of chlorinated indium tin oxide (Cl-ITO)for highly efficient organic light-emitting diodes (OLEDs): the work function, surface morphology, wetting characteristic, and hole-injection property. Via the systematic analysis of Cl-ITO, we showed that the modification of ITO using the plasma treatment method has a simple process and offers higher stability than that achieved with a solution-based modification method. We fabricated Cl-ITO with a high work function of 6.04 eV, which is 1.04 eV higher than that of pristine ITO. We verified that Cl 2 plasma treatment does not affect the ITO surface morphology. The Cl halogenated surface showed a low surface polarity and influenced the growth of the organic material, especially for films as thin as ∼4 nm. Therefore, we found when using ultra-thin film on Cl-ITO for design devices, the wetting characteristic of Cl-ITO should be considered. In addition, using tris-(4-carbazoyl-9-ylphenyl)-amine resulted in increased current and power efficiencies compared with those obtained using 4,4′-N,N′-dicarbazolebiphenyl. When a carrier-only device was used, the carrier-injection characteristics of Cl-ITO were higher than those of other well-known hole-injection materials. Furthermore, the Cl-ITO OLEDs showed higher stability than OLEDs with other hole-injection materials.
Original language | English |
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Pages (from-to) | 51-57 |
Number of pages | 7 |
Journal | Optical Materials |
Volume | 93 |
DOIs | |
Publication status | Published - 2019 Jul 1 |
Keywords
- Cl plasma treatment
- Indium tin oxide (ITO)
- Organic light-emitting diodes (OLEDs)
- Stability
- Wettability
- Work function
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Computer Science(all)
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering