Effects of Co addition on magneto-transport properties of magnetic tunnel junction consisting of CoFeB or CoFeSiB free layer

Su Jung Noh; Byong Sun Chun; Young Keun Kim; Tianxing Wang

doi:10.1063/1.3565404

Effects of Co addition on magneto-transport properties of magnetic tunnel junction consisting of CoFeB or CoFeSiB free layer

Su Jung Noh, Byong Sun Chun, Young Keun Kim, Tianxing Wang

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Amorphous ferromagnetic CoFeB and CoFeSiB layers with various Co concentrations were employed as free layers of magnetic tunnel junctions (MTJs), and their magnetization switching performances were compared. Both analytical measurements and micromagnetic modeling efforts were carried out to understand the dependence of magnetization switching field (H_sw) on Co concentration. In overall, the CoFeSiB free layered MTJs showed a lower H _sw compared to that of the CoFeB ones. This is due to the fact that CoFeSiB possesses a lower saturation magnetization than CoFeB and, moreover, its magnetization switching process shows coherent switching.

Original language	English
Article number	07D346
Journal	Journal of Applied Physics
Volume	109
Issue number	7
DOIs	https://doi.org/10.1063/1.3565404
Publication status	Published - 2011 Apr 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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abstract = "Amorphous ferromagnetic CoFeB and CoFeSiB layers with various Co concentrations were employed as free layers of magnetic tunnel junctions (MTJs), and their magnetization switching performances were compared. Both analytical measurements and micromagnetic modeling efforts were carried out to understand the dependence of magnetization switching field (Hsw) on Co concentration. In overall, the CoFeSiB free layered MTJs showed a lower H sw compared to that of the CoFeB ones. This is due to the fact that CoFeSiB possesses a lower saturation magnetization than CoFeB and, moreover, its magnetization switching process shows coherent switching.",

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AU - Chun, Byong Sun

AU - Kim, Young Keun

AU - Wang, Tianxing

PY - 2011/4/1

Y1 - 2011/4/1

N2 - Amorphous ferromagnetic CoFeB and CoFeSiB layers with various Co concentrations were employed as free layers of magnetic tunnel junctions (MTJs), and their magnetization switching performances were compared. Both analytical measurements and micromagnetic modeling efforts were carried out to understand the dependence of magnetization switching field (Hsw) on Co concentration. In overall, the CoFeSiB free layered MTJs showed a lower H sw compared to that of the CoFeB ones. This is due to the fact that CoFeSiB possesses a lower saturation magnetization than CoFeB and, moreover, its magnetization switching process shows coherent switching.

AB - Amorphous ferromagnetic CoFeB and CoFeSiB layers with various Co concentrations were employed as free layers of magnetic tunnel junctions (MTJs), and their magnetization switching performances were compared. Both analytical measurements and micromagnetic modeling efforts were carried out to understand the dependence of magnetization switching field (Hsw) on Co concentration. In overall, the CoFeSiB free layered MTJs showed a lower H sw compared to that of the CoFeB ones. This is due to the fact that CoFeSiB possesses a lower saturation magnetization than CoFeB and, moreover, its magnetization switching process shows coherent switching.

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