Effects of Current-injection Firing with Ag Paste in a Boron Emitter

Chanseok Kim, Jae Wook Choi, Sungjin Choi, Soomin Kim, Hyomin Park, Hee Eun Song, Suk Goo Yoon, Joo Youl Huh, Yoon Mook Kang, Haeseok Lee, Donghwan Kim

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8 Citations (Scopus)

Abstract

A high contact resistance for screen-printed contacts was observed when a conventional Ag paste was used on a boron emitter. The results of this study suggest that electron injection during firing is one of the processes that contribute to a lower contact resistance. Larger quantities of Ag precipitates formed upon electron injection into the boron emitter, which was confirmed by observing Ag crystallite or dendrite structures on the boron and by measuring the contact resistance between the boron emitter and the Ag bulk. The electron-injected sample had approximately 10000 times lower contact resistance than an untreated sample. The contact resistance of the electron-injected sample was 0.021 m cm 2 under optimal conditions, which is lower than that of conventional p-type silicon solar cells. Thus, electron injection can effectively lower contact resistance when using Ag paste in n-type silicon solar cells. During the cooling in the firing process, dissolved Ag ions in the glass layer are formed as dendrites or crystallites/particles. The dendrites are formed earlier than others via electrochemical migration under electron injection conditions. Then, crystallites and particles are formed via a silicon etching reaction. Thus, Ag ions that are not formed as dendrites will form as crystallites or particles.

Original languageEnglish
Article number21553
JournalScientific Reports
Volume6
DOIs
Publication statusPublished - 2016 Feb 10

ASJC Scopus subject areas

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