Abstract
Effects of dielectric capping layer with different thickness on Zn diffusion in InP using thermally evaporated Zn 3P 2 as a diffusion source were studied. Variation of Zn 3P 2 thickness deposited made negligible effect on Zn-diffusion. As the thickness of Si 3N 4 increased from 1000 Å to 3000 Å, the diffusion coefficient decreased from 1x10 -9 cm 2/sec to 2x10 -10 cm 2/sec, whereas diffusion coefficient remained constant irrespective of the thickness of SiO 2 encapsulant. Temperature dependence of diffusion coefficient showed that the activation energy of diffusion coefficient is about 1.3 eV in the samples irrespective of the type of dielectric encapsulants and their thickness.
Original language | English |
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Pages (from-to) | S77-S80 |
Journal | Journal of the Korean Physical Society |
Volume | 30 |
Issue number | SUPPL. PART 1 |
Publication status | Published - 1997 |
ASJC Scopus subject areas
- Physics and Astronomy(all)