Effects of dielectric films on Zn-diffusion in InP using thin film deposition and rapid thermal annealing

Seung Yeul Yang, Ji Beom Yoo, Sang Kee Si, Sung Joon Kim, In Shik Park, Donghwan Kim

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Effects of dielectric capping layer with different thickness on Zn diffusion in InP using thermally evaporated Zn 3P 2 as a diffusion source were studied. Variation of Zn 3P 2 thickness deposited made negligible effect on Zn-diffusion. As the thickness of Si 3N 4 increased from 1000 Å to 3000 Å, the diffusion coefficient decreased from 1x10 -9 cm 2/sec to 2x10 -10 cm 2/sec, whereas diffusion coefficient remained constant irrespective of the thickness of SiO 2 encapsulant. Temperature dependence of diffusion coefficient showed that the activation energy of diffusion coefficient is about 1.3 eV in the samples irrespective of the type of dielectric encapsulants and their thickness.

Original languageEnglish
Pages (from-to)S77-S80
JournalJournal of the Korean Physical Society
Issue numberSUPPL. PART 1
Publication statusPublished - 1997 Dec 1


ASJC Scopus subject areas

  • Physics and Astronomy(all)

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