Effects of dielectric films on Zn-diffusion in InP using thin film deposition and rapid thermal annealing

Seung Yeul Yang; Ji Beom Yoo; Sang Kee Si; Sung Joon Kim; In Shik Park; Donghwan Kim

Effects of dielectric films on Zn-diffusion in InP using thin film deposition and rapid thermal annealing

Seung Yeul Yang, Ji Beom Yoo, Sang Kee Si, Sung Joon Kim, In Shik Park, Donghwan Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Effects of dielectric capping layer with different thickness on Zn diffusion in InP using thermally evaporated Zn ₃P ₂ as a diffusion source were studied. Variation of Zn ₃P ₂ thickness deposited made negligible effect on Zn-diffusion. As the thickness of Si ₃N ₄ increased from 1000 Å to 3000 Å, the diffusion coefficient decreased from 1x10 ^-9 cm ²/sec to 2x10 ^-10 cm ²/sec, whereas diffusion coefficient remained constant irrespective of the thickness of SiO ₂ encapsulant. Temperature dependence of diffusion coefficient showed that the activation energy of diffusion coefficient is about 1.3 eV in the samples irrespective of the type of dielectric encapsulants and their thickness.

Original language	English
Pages (from-to)	S77-S80
Journal	Journal of the Korean Physical Society
Volume	30
Issue number	SUPPL. PART 1
Publication status	Published - 1997

ASJC Scopus subject areas

Physics and Astronomy(all)

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@article{1bc38399acdb4a04ae0f32bf7cc67f1f,

title = "Effects of dielectric films on Zn-diffusion in InP using thin film deposition and rapid thermal annealing",

abstract = "Effects of dielectric capping layer with different thickness on Zn diffusion in InP using thermally evaporated Zn 3P 2 as a diffusion source were studied. Variation of Zn 3P 2 thickness deposited made negligible effect on Zn-diffusion. As the thickness of Si 3N 4 increased from 1000 {\AA} to 3000 {\AA}, the diffusion coefficient decreased from 1x10 -9 cm 2/sec to 2x10 -10 cm 2/sec, whereas diffusion coefficient remained constant irrespective of the thickness of SiO 2 encapsulant. Temperature dependence of diffusion coefficient showed that the activation energy of diffusion coefficient is about 1.3 eV in the samples irrespective of the type of dielectric encapsulants and their thickness.",

author = "Yang, {Seung Yeul} and Yoo, {Ji Beom} and Si, {Sang Kee} and Kim, {Sung Joon} and Park, {In Shik} and Donghwan Kim",

year = "1997",

language = "English",

volume = "30",

pages = "S77--S80",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "SUPPL. PART 1",

}

TY - JOUR

T1 - Effects of dielectric films on Zn-diffusion in InP using thin film deposition and rapid thermal annealing

AU - Yang, Seung Yeul

AU - Yoo, Ji Beom

AU - Si, Sang Kee

AU - Kim, Sung Joon

AU - Park, In Shik

AU - Kim, Donghwan

PY - 1997

Y1 - 1997

N2 - Effects of dielectric capping layer with different thickness on Zn diffusion in InP using thermally evaporated Zn 3P 2 as a diffusion source were studied. Variation of Zn 3P 2 thickness deposited made negligible effect on Zn-diffusion. As the thickness of Si 3N 4 increased from 1000 Å to 3000 Å, the diffusion coefficient decreased from 1x10 -9 cm 2/sec to 2x10 -10 cm 2/sec, whereas diffusion coefficient remained constant irrespective of the thickness of SiO 2 encapsulant. Temperature dependence of diffusion coefficient showed that the activation energy of diffusion coefficient is about 1.3 eV in the samples irrespective of the type of dielectric encapsulants and their thickness.

AB - Effects of dielectric capping layer with different thickness on Zn diffusion in InP using thermally evaporated Zn 3P 2 as a diffusion source were studied. Variation of Zn 3P 2 thickness deposited made negligible effect on Zn-diffusion. As the thickness of Si 3N 4 increased from 1000 Å to 3000 Å, the diffusion coefficient decreased from 1x10 -9 cm 2/sec to 2x10 -10 cm 2/sec, whereas diffusion coefficient remained constant irrespective of the thickness of SiO 2 encapsulant. Temperature dependence of diffusion coefficient showed that the activation energy of diffusion coefficient is about 1.3 eV in the samples irrespective of the type of dielectric encapsulants and their thickness.

UR - http://www.scopus.com/inward/record.url?scp=0031527222&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031527222&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0031527222

VL - 30

SP - S77-S80

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - SUPPL. PART 1

ER -