Effects of dielectric films on Zn-diffusion in InP using thin film deposition and rapid thermal annealing

Seung Yeul Yang, Ji Beom Yoo, Sang Kee Si, Sung Joon Kim, In Shik Park, Donghwan Kim

Research output: Contribution to journalArticle

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Abstract

Effects of dielectric capping layer with different thickness on Zn diffusion in InP using thermally evaporated Zn 3P 2 as a diffusion source were studied. Variation of Zn 3P 2 thickness deposited made negligible effect on Zn-diffusion. As the thickness of Si 3N 4 increased from 1000 Å to 3000 Å, the diffusion coefficient decreased from 1x10 -9 cm 2/sec to 2x10 -10 cm 2/sec, whereas diffusion coefficient remained constant irrespective of the thickness of SiO 2 encapsulant. Temperature dependence of diffusion coefficient showed that the activation energy of diffusion coefficient is about 1.3 eV in the samples irrespective of the type of dielectric encapsulants and their thickness.

Original languageEnglish
JournalJournal of the Korean Physical Society
Volume30
Issue numberSUPPL. PART 1
Publication statusPublished - 1997 Dec 1

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diffusion coefficient
annealing
thin films
activation energy
temperature dependence

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Effects of dielectric films on Zn-diffusion in InP using thin film deposition and rapid thermal annealing. / Yang, Seung Yeul; Yoo, Ji Beom; Si, Sang Kee; Kim, Sung Joon; Park, In Shik; Kim, Donghwan.

In: Journal of the Korean Physical Society, Vol. 30, No. SUPPL. PART 1, 01.12.1997.

Research output: Contribution to journalArticle

Yang, Seung Yeul ; Yoo, Ji Beom ; Si, Sang Kee ; Kim, Sung Joon ; Park, In Shik ; Kim, Donghwan. / Effects of dielectric films on Zn-diffusion in InP using thin film deposition and rapid thermal annealing. In: Journal of the Korean Physical Society. 1997 ; Vol. 30, No. SUPPL. PART 1.
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abstract = "Effects of dielectric capping layer with different thickness on Zn diffusion in InP using thermally evaporated Zn 3P 2 as a diffusion source were studied. Variation of Zn 3P 2 thickness deposited made negligible effect on Zn-diffusion. As the thickness of Si 3N 4 increased from 1000 {\AA} to 3000 {\AA}, the diffusion coefficient decreased from 1x10 -9 cm 2/sec to 2x10 -10 cm 2/sec, whereas diffusion coefficient remained constant irrespective of the thickness of SiO 2 encapsulant. Temperature dependence of diffusion coefficient showed that the activation energy of diffusion coefficient is about 1.3 eV in the samples irrespective of the type of dielectric encapsulants and their thickness.",
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AU - Yoo, Ji Beom

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AU - Kim, Sung Joon

AU - Park, In Shik

AU - Kim, Donghwan

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AB - Effects of dielectric capping layer with different thickness on Zn diffusion in InP using thermally evaporated Zn 3P 2 as a diffusion source were studied. Variation of Zn 3P 2 thickness deposited made negligible effect on Zn-diffusion. As the thickness of Si 3N 4 increased from 1000 Å to 3000 Å, the diffusion coefficient decreased from 1x10 -9 cm 2/sec to 2x10 -10 cm 2/sec, whereas diffusion coefficient remained constant irrespective of the thickness of SiO 2 encapsulant. Temperature dependence of diffusion coefficient showed that the activation energy of diffusion coefficient is about 1.3 eV in the samples irrespective of the type of dielectric encapsulants and their thickness.

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