Abstract
Effects of dielectric capping layer with different thickness on Zn diffusion in InP using thermally evaporated Zn 3P 2 as a diffusion source were studied. Variation of Zn 3P 2 thickness deposited made negligible effect on Zn-diffusion. As the thickness of Si 3N 4 increased from 1000 Å to 3000 Å, the diffusion coefficient decreased from 1x10 -9 cm 2/sec to 2x10 -10 cm 2/sec, whereas diffusion coefficient remained constant irrespective of the thickness of SiO 2 encapsulant. Temperature dependence of diffusion coefficient showed that the activation energy of diffusion coefficient is about 1.3 eV in the samples irrespective of the type of dielectric encapsulants and their thickness.
| Original language | English |
|---|---|
| Journal | Journal of the Korean Physical Society |
| Volume | 30 |
| Issue number | SUPPL. PART 1 |
| Publication status | Published - 1997 Dec 1 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Effects of dielectric films on Zn-diffusion in InP using thin film deposition and rapid thermal annealing. / Yang, Seung Yeul; Yoo, Ji Beom; Si, Sang Kee; Kim, Sung Joon; Park, In Shik; Kim, Donghwan.
In: Journal of the Korean Physical Society, Vol. 30, No. SUPPL. PART 1, 01.12.1997.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effects of dielectric films on Zn-diffusion in InP using thin film deposition and rapid thermal annealing
AU - Yang, Seung Yeul
AU - Yoo, Ji Beom
AU - Si, Sang Kee
AU - Kim, Sung Joon
AU - Park, In Shik
AU - Kim, Donghwan
PY - 1997/12/1
Y1 - 1997/12/1
N2 - Effects of dielectric capping layer with different thickness on Zn diffusion in InP using thermally evaporated Zn 3P 2 as a diffusion source were studied. Variation of Zn 3P 2 thickness deposited made negligible effect on Zn-diffusion. As the thickness of Si 3N 4 increased from 1000 Å to 3000 Å, the diffusion coefficient decreased from 1x10 -9 cm 2/sec to 2x10 -10 cm 2/sec, whereas diffusion coefficient remained constant irrespective of the thickness of SiO 2 encapsulant. Temperature dependence of diffusion coefficient showed that the activation energy of diffusion coefficient is about 1.3 eV in the samples irrespective of the type of dielectric encapsulants and their thickness.
AB - Effects of dielectric capping layer with different thickness on Zn diffusion in InP using thermally evaporated Zn 3P 2 as a diffusion source were studied. Variation of Zn 3P 2 thickness deposited made negligible effect on Zn-diffusion. As the thickness of Si 3N 4 increased from 1000 Å to 3000 Å, the diffusion coefficient decreased from 1x10 -9 cm 2/sec to 2x10 -10 cm 2/sec, whereas diffusion coefficient remained constant irrespective of the thickness of SiO 2 encapsulant. Temperature dependence of diffusion coefficient showed that the activation energy of diffusion coefficient is about 1.3 eV in the samples irrespective of the type of dielectric encapsulants and their thickness.
UR - http://www.scopus.com/inward/record.url?scp=0031527222&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0031527222&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0031527222
VL - 30
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
SN - 0374-4884
IS - SUPPL. PART 1
ER -