Effects of dielectric capping layer with different thickness on Zn diffusion in InP using thermally evaporated Zn 3P 2 as a diffusion source were studied. Variation of Zn 3P 2 thickness deposited made negligible effect on Zn-diffusion. As the thickness of Si 3N 4 increased from 1000 Å to 3000 Å, the diffusion coefficient decreased from 1x10 -9 cm 2/sec to 2x10 -10 cm 2/sec, whereas diffusion coefficient remained constant irrespective of the thickness of SiO 2 encapsulant. Temperature dependence of diffusion coefficient showed that the activation energy of diffusion coefficient is about 1.3 eV in the samples irrespective of the type of dielectric encapsulants and their thickness.
|Journal||Journal of the Korean Physical Society|
|Issue number||SUPPL. PART 1|
|Publication status||Published - 1997|
ASJC Scopus subject areas
- Physics and Astronomy(all)