Abstract
Effects of dielectric capping layer with different thickness on Zn diffusion in InP using thermally evaporated Zn 3P 2 as a diffusion source were studied. Variation of Zn 3P 2 thickness deposited made negligible effect on Zn-diffusion. As the thickness of Si 3N 4 increased from 1000 Å to 3000 Å, the diffusion coefficient decreased from 1x10 -9 cm 2/sec to 2x10 -10 cm 2/sec, whereas diffusion coefficient remained constant irrespective of the thickness of SiO 2 encapsulant. Temperature dependence of diffusion coefficient showed that the activation energy of diffusion coefficient is about 1.3 eV in the samples irrespective of the type of dielectric encapsulants and their thickness.
| Original language | English |
|---|---|
| Pages (from-to) | S77-S80 |
| Journal | Journal of the Korean Physical Society |
| Volume | 30 |
| Issue number | SUPPL. PART 1 |
| Publication status | Published - 1997 Dec 1 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Yang, S. Y., Yoo, J. B., Si, S. K., Kim, S. J., Park, I. S., & Kim, D. (1997). Effects of dielectric films on Zn-diffusion in InP using thin film deposition and rapid thermal annealing. Journal of the Korean Physical Society, 30(SUPPL. PART 1), S77-S80.