Effects of downstream plasma exposure on β-Ga2O3 rectifiers

Xinyi Xia, Minghan Xian, Chaker Fares, Fan Ren, Junghun Kim, Jihyun Kim, Marko Tadjer, Stephen J. Pearton

Research output: Contribution to journalArticlepeer-review

Abstract

The effects of downstream plasma exposure with O2, N2 or CF4 discharges on Si-doped Ga2O3 Schottky diode forward and reverse current-voltage characteristics were investigated. The samples were exposed to discharges with rf power of 50 W plasma at a pressure of 400 mTorr and a fixed treatment time of 1 min to simulate dielectric layer removal, photoresist ashing or surface cleaning steps. Schottky contacts were deposited through a shadow mask after exposure to avoid any changes to the surface. A Schottky barrier height of 1.1 eV was obtained for the reference sample without plasma treatment, with an ideality factor of 1.0. The diodes exposed to CF4 showed a 0.25 V shift from the I–V of the reference sample due to a Schottky barrier height lowering around 14%. The diodes showed a decrease of Schottky barrier height of 2.5 and 6.5% with O2 or N2 treatments, respectively. The effect of plasma exposure on the ideality factor of diodes treated with these plasmas was minimal; 0.2% for O2 and N2, 0.3% for CF4, respectively. The reverse leakage currents were 1.2, 2.2 and 4.8 μA cm-2 for the diodes treated with O2, and CF4, and N2 respectively. The effect of downstream plasma treatment on diode on-resistance and on-off ratio were also minimal. The changes observed are much less than caused by exposure to hydrogen-containing plasmas and indicate that downstream plasma stripping of films from Ga2O3 during device processing is a relatively benign approach.

Original languageEnglish
Article number065005
JournalECS Journal of Solid State Science and Technology
Volume10
Issue number6
DOIs
Publication statusPublished - 2021

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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