Effects of excess Sb on crystallization of δ-phase SbTe binary thin films

Min Soo Youm, Yong Tae Kim, Young Hwan Kim, Man Young Sung

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

The phase-change temperature and crystal structures of the δ-phase SbTe alloy for Sb contents of 64 at%, 72 at%, and 76 at% have been investigated. The δ-phase SbTe alloy has a rhombohedral crystal structure, and crystallization occurs in an extremely narrow temperature range of 140-145°C compared with Sb 40Te 60). We have determined the relationship between the Sb content and the crystalline structure using X-ray diffraction and selected area electron diffraction. When the Sb content increases, the number of Sb layers stacked with Sb 2Te 3 in the unit cell increases, which results in the lowering of the activation energy for crystallization and a lower ovonic threshold voltage.

Original languageEnglish
Pages (from-to)1636-1640
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume205
Issue number7
DOIs
Publication statusPublished - 2008 Jul 1

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Crystallization
Crystal structure
crystallization
Thin films
thin films
Threshold voltage
Electron diffraction
crystal structure
Activation energy
Crystalline materials
X ray diffraction
threshold voltage
Temperature
low voltage
electron diffraction
activation energy
temperature
cells
diffraction
x rays

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Effects of excess Sb on crystallization of δ-phase SbTe binary thin films. / Youm, Min Soo; Kim, Yong Tae; Kim, Young Hwan; Sung, Man Young.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 205, No. 7, 01.07.2008, p. 1636-1640.

Research output: Contribution to journalArticle

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