Effects of extended dislocations on charge distribution in GaN epilayer

H. Choi, Eui Kwan Koh, Yong Min Cho, Junggeun Jin, Dong Jin Byun, M. Yoon

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We have investigated the effect of extended dislocations (0.5-3 μm) on charge distribution in GaN epilayer grown by metalorganic chemical vapor deposition on (0001) sapphire using atomic force microscopy (AFM) and scanning surface potential microscopy (SSPM). It has been observed for the surface at the extended dislocations present in undoped GaN film to be negatively charged showing 0.04-0.2 V higher potential relative to regions that contain no dislocations. In addition to the higher potential at the dislocation core, the surrounding surfaces, including the edge of the dislocations, are also negatively charged in a symmetric way around the dislocations revealing crater-shaped higher potential regions (∼0.04 V) relative to surrounding dislocation-free area. The experimental results show that the protrusion-type of dislocation is also negatively charged and its potential is dependent on the size of dislocation.

Original languageEnglish
Pages (from-to)25-28
Number of pages4
JournalMicroelectronics Journal
Volume36
Issue number1
DOIs
Publication statusPublished - 2005 Jan 1

Fingerprint

Epilayers
Charge distribution
charge distribution
Aluminum Oxide
Metallorganic chemical vapor deposition
Surface potential
Sapphire
Atomic force microscopy
Microscopic examination
Scanning
craters
metalorganic chemical vapor deposition
sapphire
atomic force microscopy
microscopy
scanning

Keywords

  • AFM
  • Dislocation
  • GaN
  • SSPM

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Effects of extended dislocations on charge distribution in GaN epilayer. / Choi, H.; Koh, Eui Kwan; Cho, Yong Min; Jin, Junggeun; Byun, Dong Jin; Yoon, M.

In: Microelectronics Journal, Vol. 36, No. 1, 01.01.2005, p. 25-28.

Research output: Contribution to journalArticle

Choi, H. ; Koh, Eui Kwan ; Cho, Yong Min ; Jin, Junggeun ; Byun, Dong Jin ; Yoon, M. / Effects of extended dislocations on charge distribution in GaN epilayer. In: Microelectronics Journal. 2005 ; Vol. 36, No. 1. pp. 25-28.
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