Effects of extended dislocations on charge distribution in GaN epilayer

H. Choi, Eui Kwan Koh, Yong Min Cho, Junggeun Jin, Dongjin Byun, M. Yoon

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We have investigated the effect of extended dislocations (0.5-3 μm) on charge distribution in GaN epilayer grown by metalorganic chemical vapor deposition on (0001) sapphire using atomic force microscopy (AFM) and scanning surface potential microscopy (SSPM). It has been observed for the surface at the extended dislocations present in undoped GaN film to be negatively charged showing 0.04-0.2 V higher potential relative to regions that contain no dislocations. In addition to the higher potential at the dislocation core, the surrounding surfaces, including the edge of the dislocations, are also negatively charged in a symmetric way around the dislocations revealing crater-shaped higher potential regions (∼0.04 V) relative to surrounding dislocation-free area. The experimental results show that the protrusion-type of dislocation is also negatively charged and its potential is dependent on the size of dislocation.

Original languageEnglish
Pages (from-to)25-28
Number of pages4
JournalMicroelectronics Journal
Volume36
Issue number1
DOIs
Publication statusPublished - 2005 Jan

Keywords

  • AFM
  • Dislocation
  • GaN
  • SSPM

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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