Effects of film thickness and annealing on the magnetic properties of GaMnAsP ferromagnetic semiconductor

Jihoon Chang, Seonghoon Choi, Kyung Jae Lee, Seul Ki Bac, Suho Choi, Phunvira Chongthanaphisut, Sang Hoon Lee, Xinyu Liu, M. Dobrowolska, Jacek K. Furdyna

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We have investigated the magnetic properties of ferromagnetic semiconductor GaMnAsP films with two different thicknesses. Temperature scans of the resistance revealed that the Curie temperature was higher in the 50-nm GaMnAsP layer than in the 16-nm layer, and was increased in both layers after annealing. The Hall effect was measured during the magnetization reversal process to identify the anisotropy of the films. The hysteresis observed from the as-grown samples in anomalous Hall resistance measurements implied the presence of out-of-plane magnetic anisotropy in both samples. The out-of-plane magnetic anisotropy in both samples became much stronger after thermal annealing. Quantitative values of the magnetic anisotropy of the GaMnAsP films were obtained from angular dependent Hall effect measurements. By constructing magnetic anisotropy energy diagrams for the films, we clearly show the change of magnetic anisotropy depending on the film thickness and thermal annealing in GaMnAsP films.

Original languageEnglish
Pages (from-to)112-118
Number of pages7
JournalJournal of Crystal Growth
Volume512
DOIs
Publication statusPublished - 2019 Apr 15

Fingerprint

Magnetic anisotropy
Film thickness
Magnetic properties
film thickness
Annealing
Semiconductor materials
magnetic properties
anisotropy
annealing
Hall effect
Magnetization reversal
Hall resistance
Curie temperature
Hysteresis
Anisotropy
hysteresis
diagrams
magnetization
Temperature
Hot Temperature

Keywords

  • A1. Characterization
  • A3. Molecular beam epitaxy
  • A3. Multilayer
  • Anomalous hall effect
  • B2. Semiconducting III–V materials (GaMnAsP ferromagnetic semiconductors
  • Magnetic anisotropy
  • Planar hall effect
  • Tensile strain

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Chang, J., Choi, S., Lee, K. J., Bac, S. K., Choi, S., Chongthanaphisut, P., ... Furdyna, J. K. (2019). Effects of film thickness and annealing on the magnetic properties of GaMnAsP ferromagnetic semiconductor. Journal of Crystal Growth, 512, 112-118. https://doi.org/10.1016/j.jcrysgro.2019.01.035

Effects of film thickness and annealing on the magnetic properties of GaMnAsP ferromagnetic semiconductor. / Chang, Jihoon; Choi, Seonghoon; Lee, Kyung Jae; Bac, Seul Ki; Choi, Suho; Chongthanaphisut, Phunvira; Lee, Sang Hoon; Liu, Xinyu; Dobrowolska, M.; Furdyna, Jacek K.

In: Journal of Crystal Growth, Vol. 512, 15.04.2019, p. 112-118.

Research output: Contribution to journalArticle

Chang, J, Choi, S, Lee, KJ, Bac, SK, Choi, S, Chongthanaphisut, P, Lee, SH, Liu, X, Dobrowolska, M & Furdyna, JK 2019, 'Effects of film thickness and annealing on the magnetic properties of GaMnAsP ferromagnetic semiconductor', Journal of Crystal Growth, vol. 512, pp. 112-118. https://doi.org/10.1016/j.jcrysgro.2019.01.035
Chang, Jihoon ; Choi, Seonghoon ; Lee, Kyung Jae ; Bac, Seul Ki ; Choi, Suho ; Chongthanaphisut, Phunvira ; Lee, Sang Hoon ; Liu, Xinyu ; Dobrowolska, M. ; Furdyna, Jacek K. / Effects of film thickness and annealing on the magnetic properties of GaMnAsP ferromagnetic semiconductor. In: Journal of Crystal Growth. 2019 ; Vol. 512. pp. 112-118.
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