Effects of geometrically extended contact area on electrical properties in amorphous InGaZnO thin film transistors

Jae Sung Kim, Min Kyu Joo, Ming Xing Piao, Seung Eon Ahn, Yong Hee Choi, Junhong Na, Minju Shin, Man Joong Han, Ho Kyun Jang, Gyu Tae Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

To elucidate the effect of the contact geometry on the device performances, the amorphous InGaZnO field effect transistors with different contact areas were fabricated and compared by the transmission line method. Extended contact-area devices were found to have better electrical performances in field effect mobility and subthreshold swing than those of bar-shaped reference devices. These improvements in the device characteristics resulted from a significantly reduced contact resistance (Rc). From the comparison of specific contact resistivity and transfer length (LT), the relationship between Rc and contact area including the contact width and the LT was established and demonstrated that Rc is controllable by optimizing the contact area geometry.

Original languageEnglish
Pages (from-to)279-282
Number of pages4
JournalThin Solid Films
Volume558
DOIs
Publication statusPublished - 2014 May 2

Keywords

  • Amorphous oxide
  • Contact area
  • Contact resistance
  • InGaZnO
  • Specific contact resistivity
  • Thin film transistor
  • Transfer length
  • Transmission line method

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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    Kim, J. S., Joo, M. K., Piao, M. X., Ahn, S. E., Choi, Y. H., Na, J., Shin, M., Han, M. J., Jang, H. K., & Kim, G. T. (2014). Effects of geometrically extended contact area on electrical properties in amorphous InGaZnO thin film transistors. Thin Solid Films, 558, 279-282. https://doi.org/10.1016/j.tsf.2014.02.026