Effects of heat treatment on the surface carrier density in p-type CdTe

Donghwan Kim, Alan L. Fahrenbruch, Richard H. Bube

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

The authors investigate the mechanism by which the carrier density of p-CdTe:P decreases due to heat treatment. By successive etching of a heat-treated sample, a carrier-density profile resulting from carrier loss near the surface was found to be a real effect. Experiments with varying cadmium and phosphorus vapor pressures are presented which indicate that compensation occurs through the formation of PCd antisite donors. Observation of the reverse reaction by annealing a sample of p-CdTe:P with CdTe powder after first annealing in vacuum shows that it does occur but at a much slower rate than the formation of the PCd defects.

Original languageEnglish
Pages (from-to)1487-1490
Number of pages4
JournalConference Record of the IEEE Photovoltaic Specialists Conference
Volume2
Publication statusPublished - 1988
EventTwentieth IEEE Photovoltaic Specialists Conference - 1988 - Las Vegas, NV, USA
Duration: 1988 Sep 261988 Sep 30

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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