Effects of heat treatment on the surface carrier density in p-type CdTe

Donghwan Kim; Alan L. Fahrenbruch; Richard H. Bube

Effects of heat treatment on the surface carrier density in p-type CdTe

Donghwan Kim, Alan L. Fahrenbruch, Richard H. Bube

Research output: Contribution to journal › Conference article › peer-review

Abstract

The authors investigate the mechanism by which the carrier density of p-CdTe:P decreases due to heat treatment. By successive etching of a heat-treated sample, a carrier-density profile resulting from carrier loss near the surface was found to be a real effect. Experiments with varying cadmium and phosphorus vapor pressures are presented which indicate that compensation occurs through the formation of P_Cd antisite donors. Observation of the reverse reaction by annealing a sample of p-CdTe:P with CdTe powder after first annealing in vacuum shows that it does occur but at a much slower rate than the formation of the P_Cd defects.

Original language	English
Pages (from-to)	1487-1490
Number of pages	4
Journal	Conference Record of the IEEE Photovoltaic Specialists Conference
Volume	2
Publication status	Published - 1988
Externally published	Yes
Event	Twentieth IEEE Photovoltaic Specialists Conference - 1988 - Las Vegas, NV, USA Duration: 1988 Sept 26 → 1988 Sept 30

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Cite this

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title = "Effects of heat treatment on the surface carrier density in p-type CdTe",

abstract = "The authors investigate the mechanism by which the carrier density of p-CdTe:P decreases due to heat treatment. By successive etching of a heat-treated sample, a carrier-density profile resulting from carrier loss near the surface was found to be a real effect. Experiments with varying cadmium and phosphorus vapor pressures are presented which indicate that compensation occurs through the formation of PCd antisite donors. Observation of the reverse reaction by annealing a sample of p-CdTe:P with CdTe powder after first annealing in vacuum shows that it does occur but at a much slower rate than the formation of the PCd defects.",

author = "Donghwan Kim and Fahrenbruch, {Alan L.} and Bube, {Richard H.}",

year = "1988",

language = "English",

volume = "2",

pages = "1487--1490",

journal = "Conference Record of the IEEE Photovoltaic Specialists Conference",

issn = "0160-8371",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Twentieth IEEE Photovoltaic Specialists Conference - 1988 ; Conference date: 26-09-1988 Through 30-09-1988",

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TY - JOUR

T1 - Effects of heat treatment on the surface carrier density in p-type CdTe

AU - Kim, Donghwan

AU - Fahrenbruch, Alan L.

AU - Bube, Richard H.

PY - 1988

Y1 - 1988

N2 - The authors investigate the mechanism by which the carrier density of p-CdTe:P decreases due to heat treatment. By successive etching of a heat-treated sample, a carrier-density profile resulting from carrier loss near the surface was found to be a real effect. Experiments with varying cadmium and phosphorus vapor pressures are presented which indicate that compensation occurs through the formation of PCd antisite donors. Observation of the reverse reaction by annealing a sample of p-CdTe:P with CdTe powder after first annealing in vacuum shows that it does occur but at a much slower rate than the formation of the PCd defects.

AB - The authors investigate the mechanism by which the carrier density of p-CdTe:P decreases due to heat treatment. By successive etching of a heat-treated sample, a carrier-density profile resulting from carrier loss near the surface was found to be a real effect. Experiments with varying cadmium and phosphorus vapor pressures are presented which indicate that compensation occurs through the formation of PCd antisite donors. Observation of the reverse reaction by annealing a sample of p-CdTe:P with CdTe powder after first annealing in vacuum shows that it does occur but at a much slower rate than the formation of the PCd defects.

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M3 - Conference article

AN - SCOPUS:0024180402

SN - 0160-8371

VL - 2

SP - 1487

EP - 1490

JO - Conference Record of the IEEE Photovoltaic Specialists Conference

JF - Conference Record of the IEEE Photovoltaic Specialists Conference

T2 - Twentieth IEEE Photovoltaic Specialists Conference - 1988

Y2 - 26 September 1988 through 30 September 1988

ER -

Effects of heat treatment on the surface carrier density in p-type CdTe

Abstract

ASJC Scopus subject areas

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