Effects of heat treatment on the surface carrier density in p-type CdTe

Donghwan Kim, Alan L. Fahrenbruch, Richard H. Bube

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

The authors investigate the mechanism by which the carrier density of p-CdTe:P decreases due to heat treatment. By successive etching of a heat-treated sample, a carrier-density profile resulting from carrier loss near the surface was found to be a real effect. Experiments with varying cadmium and phosphorus vapor pressures are presented which indicate that compensation occurs through the formation of P Cd antisite donors. Observation of the reverse reaction by annealing a sample of p-CdTe:P with CdTe powder after first annealing in vacuum shows that it does occur but at a much slower rate than the formation of the P Cd defects.

Original languageEnglish
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Editors Anon
PublisherPubl by IEEE
Pages1487-1490
Number of pages4
Volume2
Publication statusPublished - 1988
Externally publishedYes
EventTwentieth IEEE Photovoltaic Specialists Conference - 1988 - Las Vegas, NV, USA
Duration: 1988 Sep 261988 Sep 30

Other

OtherTwentieth IEEE Photovoltaic Specialists Conference - 1988
CityLas Vegas, NV, USA
Period88/9/2688/9/30

Fingerprint

Carrier concentration
heat treatment
Heat treatment
Annealing
annealing
Vapor pressure
Cadmium
cadmium
vapor pressure
phosphorus
Phosphorus
Etching
etching
Vacuum
Powders
heat
Defects
vacuum
defects
profiles

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Condensed Matter Physics

Cite this

Kim, D., Fahrenbruch, A. L., & Bube, R. H. (1988). Effects of heat treatment on the surface carrier density in p-type CdTe. In Anon (Ed.), Conference Record of the IEEE Photovoltaic Specialists Conference (Vol. 2, pp. 1487-1490). Publ by IEEE.

Effects of heat treatment on the surface carrier density in p-type CdTe. / Kim, Donghwan; Fahrenbruch, Alan L.; Bube, Richard H.

Conference Record of the IEEE Photovoltaic Specialists Conference. ed. / Anon. Vol. 2 Publ by IEEE, 1988. p. 1487-1490.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kim, D, Fahrenbruch, AL & Bube, RH 1988, Effects of heat treatment on the surface carrier density in p-type CdTe. in Anon (ed.), Conference Record of the IEEE Photovoltaic Specialists Conference. vol. 2, Publ by IEEE, pp. 1487-1490, Twentieth IEEE Photovoltaic Specialists Conference - 1988, Las Vegas, NV, USA, 88/9/26.
Kim D, Fahrenbruch AL, Bube RH. Effects of heat treatment on the surface carrier density in p-type CdTe. In Anon, editor, Conference Record of the IEEE Photovoltaic Specialists Conference. Vol. 2. Publ by IEEE. 1988. p. 1487-1490
Kim, Donghwan ; Fahrenbruch, Alan L. ; Bube, Richard H. / Effects of heat treatment on the surface carrier density in p-type CdTe. Conference Record of the IEEE Photovoltaic Specialists Conference. editor / Anon. Vol. 2 Publ by IEEE, 1988. pp. 1487-1490
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