Effects of heat-up procedure and grating depth on the erosion of InGaAs grating

Jeong Soo Kim, Chongdae Park, Sahn Nahm, Heung Ro Choo, Hong Man Kim, Kwang Eui Pyun

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Effects of heat-up procedure and grating depth on the erosion of InGaAs absorptive layers and the quality of strained multiple quantum wells (MQWs) were investigated using transmission electron microscopy (TEM) and double crystal X-ray diffraction (DXRD) analysis, in the fabrication of loss-coupled distributed feedback laser diodes (DFB-LDs) that have absorptive grating on the side of substrate. Decomposition of an InGaAs grating depends on the growth starting temperature and grating depth. Even before starting InP growth, a part of the InGaAs was decomposed during the heat-up process. These decomposed adatoms of indium, gallium, and arsenic seem to migrate to the concave region of the grating and then form a new material phase at the bottom of the concave region. At the initial stage of InP planarization layer growth, InP growth on the InGaAs mesa does not take place until the concave region of grating is fully filled, while a part of InGaAs is decomposed. Desorbed adatoms seemed to migrate to the upper part of the growing InP on the concave region and form another new material phase in this region. The growth technique of n-InP planarization layers over shallow gratings with the growth starting temperature of 550°C allows strained MQWs of good crystalline quality, leading to the successful fabrication of very low threshold loss-coupled DFB-LDs.

Original languageEnglish
Pages (from-to)391-396
Number of pages6
JournalJournal of Crystal Growth
Volume179
Issue number3-4
Publication statusPublished - 1997 Aug 1

Fingerprint

erosion
Erosion
gratings
heat
Adatoms
Semiconductor quantum wells
adatoms
Fabrication
quantum wells
Gallium
Indium
Distributed feedback lasers
Arsenic
fabrication
distributed feedback lasers
X ray diffraction analysis
mesas
Semiconductor lasers
Hot Temperature
arsenic

Keywords

  • Erosion of grating
  • Loss coupled dfb-ld
  • Metal-organic vapor phase epitaxy

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Kim, J. S., Park, C., Nahm, S., Choo, H. R., Kim, H. M., & Pyun, K. E. (1997). Effects of heat-up procedure and grating depth on the erosion of InGaAs grating. Journal of Crystal Growth, 179(3-4), 391-396.

Effects of heat-up procedure and grating depth on the erosion of InGaAs grating. / Kim, Jeong Soo; Park, Chongdae; Nahm, Sahn; Choo, Heung Ro; Kim, Hong Man; Pyun, Kwang Eui.

In: Journal of Crystal Growth, Vol. 179, No. 3-4, 01.08.1997, p. 391-396.

Research output: Contribution to journalArticle

Kim, JS, Park, C, Nahm, S, Choo, HR, Kim, HM & Pyun, KE 1997, 'Effects of heat-up procedure and grating depth on the erosion of InGaAs grating', Journal of Crystal Growth, vol. 179, no. 3-4, pp. 391-396.
Kim, Jeong Soo ; Park, Chongdae ; Nahm, Sahn ; Choo, Heung Ro ; Kim, Hong Man ; Pyun, Kwang Eui. / Effects of heat-up procedure and grating depth on the erosion of InGaAs grating. In: Journal of Crystal Growth. 1997 ; Vol. 179, No. 3-4. pp. 391-396.
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