InGaN multi-quantum-well light-emitting diodes (LEDs) in the form of unpackaged die with emission wavelengths from 410 to 525 nm were irradiated with 40 MeV protons to doses of 5 × 10 9-5 × 10 10 cm -2. The highest dose is equivalent to more than 100 years in low-earth orbit. The projected range of these protons is >50 μm in GaN and thus they traverse the entire active region. The electroluminescent intensity from the LEDs decreased by only 15%-25% even for the highest doses and the reverse breakdown voltage increased by 1-2V from their control values of ∼21-29 V. The percentage change in breakdown voltage and electroluminescence intensity was independent of the initial emission wavelength over the range investigated, within experimental error. The GaN LEDs exhibit extremely good stability to these high-energy proton irradiations with no measurable change in contact resistance or contact morphology.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2004 Oct 11|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)