Effects of high-dose 40 MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes

Rohit Khanna; K. K. Allums; C. R. Abernathy; S. J. Pearton; Jihyun Kim; F. Ren; R. Dwivedi; T. N. Fogarty; R. Wilkins

doi:10.1063/1.1803933

Effects of high-dose 40 MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes

Rohit Khanna, K. K. Allums, C. R. Abernathy, S. J. Pearton, Jihyun Kim, F. Ren, R. Dwivedi, T. N. Fogarty, R. Wilkins

Research output: Contribution to journal › Article › peer-review

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Abstract

InGaN multi-quantum-well light-emitting diodes (LEDs) in the form of unpackaged die with emission wavelengths from 410 to 525 nm were irradiated with 40 MeV protons to doses of 5 × 10 ⁹-5 × 10 ¹⁰ cm ^-2. The highest dose is equivalent to more than 100 years in low-earth orbit. The projected range of these protons is >50 μm in GaN and thus they traverse the entire active region. The electroluminescent intensity from the LEDs decreased by only 15%-25% even for the highest doses and the reverse breakdown voltage increased by 1-2V from their control values of ∼21-29 V. The percentage change in breakdown voltage and electroluminescence intensity was independent of the initial emission wavelength over the range investigated, within experimental error. The GaN LEDs exhibit extremely good stability to these high-energy proton irradiations with no measurable change in contact resistance or contact morphology.

Original language	English
Pages (from-to)	3131-3133
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	15
DOIs	https://doi.org/10.1063/1.1803933
Publication status	Published - 2004 Oct 11
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{566ce7b3f7e34021bc435216ba6d48e4,

title = "Effects of high-dose 40 MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes",

abstract = "InGaN multi-quantum-well light-emitting diodes (LEDs) in the form of unpackaged die with emission wavelengths from 410 to 525 nm were irradiated with 40 MeV protons to doses of 5 × 10 9-5 × 10 10 cm -2. The highest dose is equivalent to more than 100 years in low-earth orbit. The projected range of these protons is >50 μm in GaN and thus they traverse the entire active region. The electroluminescent intensity from the LEDs decreased by only 15%-25% even for the highest doses and the reverse breakdown voltage increased by 1-2V from their control values of ∼21-29 V. The percentage change in breakdown voltage and electroluminescence intensity was independent of the initial emission wavelength over the range investigated, within experimental error. The GaN LEDs exhibit extremely good stability to these high-energy proton irradiations with no measurable change in contact resistance or contact morphology.",

author = "Rohit Khanna and Allums, {K. K.} and Abernathy, {C. R.} and Pearton, {S. J.} and Jihyun Kim and F. Ren and R. Dwivedi and Fogarty, {T. N.} and R. Wilkins",

note = "Funding Information: The work at UF is partially supported by AFOSR Grant under Grant No. F49620-03-1-0370, by the Army Research Office under Grant No. DAAD19-01-l-0603, the Army Research Laboratory, AFOSR (F49620-02-1-0366, G. Witt and F49620-03-1-0370), NSF(CTS-0301178, monitored by Dr. M. Burka and Dr. D. Senich), by NASA Kennedy Space Center Grant No. NAG 10-316 monitored by Daniel E. Fitch, and the National Science Foundation (DMR 0400416, Dr. L. Hess). The work at Prairie View A&M is supported by NASA Grant No. NCC9-114. ",

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doi = "10.1063/1.1803933",

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TY - JOUR

T1 - Effects of high-dose 40 MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes

AU - Khanna, Rohit

AU - Allums, K. K.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Kim, Jihyun

AU - Ren, F.

AU - Dwivedi, R.

AU - Fogarty, T. N.

AU - Wilkins, R.

N1 - Funding Information: The work at UF is partially supported by AFOSR Grant under Grant No. F49620-03-1-0370, by the Army Research Office under Grant No. DAAD19-01-l-0603, the Army Research Laboratory, AFOSR (F49620-02-1-0366, G. Witt and F49620-03-1-0370), NSF(CTS-0301178, monitored by Dr. M. Burka and Dr. D. Senich), by NASA Kennedy Space Center Grant No. NAG 10-316 monitored by Daniel E. Fitch, and the National Science Foundation (DMR 0400416, Dr. L. Hess). The work at Prairie View A&M is supported by NASA Grant No. NCC9-114.

PY - 2004/10/11

Y1 - 2004/10/11

N2 - InGaN multi-quantum-well light-emitting diodes (LEDs) in the form of unpackaged die with emission wavelengths from 410 to 525 nm were irradiated with 40 MeV protons to doses of 5 × 10 9-5 × 10 10 cm -2. The highest dose is equivalent to more than 100 years in low-earth orbit. The projected range of these protons is >50 μm in GaN and thus they traverse the entire active region. The electroluminescent intensity from the LEDs decreased by only 15%-25% even for the highest doses and the reverse breakdown voltage increased by 1-2V from their control values of ∼21-29 V. The percentage change in breakdown voltage and electroluminescence intensity was independent of the initial emission wavelength over the range investigated, within experimental error. The GaN LEDs exhibit extremely good stability to these high-energy proton irradiations with no measurable change in contact resistance or contact morphology.

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Effects of high-dose 40 MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes

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