Effects of high-dose 40 MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes

Rohit Khanna, K. K. Allums, C. R. Abernathy, S. J. Pearton, Jihyun Kim, F. Ren, R. Dwivedi, T. N. Fogarty, R. Wilkins

Research output: Contribution to journalArticlepeer-review

33 Citations (Scopus)

Fingerprint

Dive into the research topics of 'Effects of high-dose 40 MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes'. Together they form a unique fingerprint.

Physics & Astronomy