Effects of high-energy proton irradiation on the density and hall mobility of majority carriers in single crystalline n-type CuInSe2 thin films

Haeseok Lee, Hiroshi Okada, Akihiro Wakahara, Akira Yoshida, Takeshi Ohshima, Hisayoshi Itoh, Shirou Kawakita, Mitsuru Imaizumi, Sumio Matsuda

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Proton irradiation effects in CuInSe2 (CIS) thin films have been investigated as a function of proton energy (0.38, 1 and 3 MeV). Single crystalline n-CIS thin films were prepared by radio frequency sputtering. The electrical properties of as-grown and irradiated samples were measured. The typical electron concentration and Hall mobility in as-grown samples were 4 × 1016 cm-3 and 120 cm2/Vs, respectively. After 0.38 and 1MeV proton irradiation, both of the electron concentration and Hall mobility were decreased as the fluence exceeded 1 × 1013 cm-2, but for 3 MeV proton irradiation, they were decreased over the fluence of 1 × 1014 cm-2. The damage by high-energy proton irradiation was lower than that by low-energy proton irradiation. The carrier removal rate with proton fluence was estimated about from 1800 to 300 cm-1 as proton energy was changed from 0.38 to 3 MeV.

Original languageEnglish
Pages (from-to)471-474
Number of pages4
JournalPhysica Status Solidi (A) Applied Research
Volume199
Issue number3
DOIs
Publication statusPublished - 2003 Oct 1
Externally publishedYes

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Proton irradiation
Hall mobility
majority carriers
proton irradiation
Crystalline materials
Thin films
Protons
thin films
fluence
proton energy
energy
Electrons
Sputtering
radio frequencies
Electric properties
electrons
sputtering
electrical properties
damage
protons

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Effects of high-energy proton irradiation on the density and hall mobility of majority carriers in single crystalline n-type CuInSe2 thin films. / Lee, Haeseok; Okada, Hiroshi; Wakahara, Akihiro; Yoshida, Akira; Ohshima, Takeshi; Itoh, Hisayoshi; Kawakita, Shirou; Imaizumi, Mitsuru; Matsuda, Sumio.

In: Physica Status Solidi (A) Applied Research, Vol. 199, No. 3, 01.10.2003, p. 471-474.

Research output: Contribution to journalArticle

Lee, Haeseok ; Okada, Hiroshi ; Wakahara, Akihiro ; Yoshida, Akira ; Ohshima, Takeshi ; Itoh, Hisayoshi ; Kawakita, Shirou ; Imaizumi, Mitsuru ; Matsuda, Sumio. / Effects of high-energy proton irradiation on the density and hall mobility of majority carriers in single crystalline n-type CuInSe2 thin films. In: Physica Status Solidi (A) Applied Research. 2003 ; Vol. 199, No. 3. pp. 471-474.
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AU - Lee, Haeseok

AU - Okada, Hiroshi

AU - Wakahara, Akihiro

AU - Yoshida, Akira

AU - Ohshima, Takeshi

AU - Itoh, Hisayoshi

AU - Kawakita, Shirou

AU - Imaizumi, Mitsuru

AU - Matsuda, Sumio

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AB - Proton irradiation effects in CuInSe2 (CIS) thin films have been investigated as a function of proton energy (0.38, 1 and 3 MeV). Single crystalline n-CIS thin films were prepared by radio frequency sputtering. The electrical properties of as-grown and irradiated samples were measured. The typical electron concentration and Hall mobility in as-grown samples were 4 × 1016 cm-3 and 120 cm2/Vs, respectively. After 0.38 and 1MeV proton irradiation, both of the electron concentration and Hall mobility were decreased as the fluence exceeded 1 × 1013 cm-2, but for 3 MeV proton irradiation, they were decreased over the fluence of 1 × 1014 cm-2. The damage by high-energy proton irradiation was lower than that by low-energy proton irradiation. The carrier removal rate with proton fluence was estimated about from 1800 to 300 cm-1 as proton energy was changed from 0.38 to 3 MeV.

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