Effects of high-energy proton irradiation on the density and hall mobility of majority carriers in single crystalline n-type CuInSe2 thin films

Hae Seok Lee; Hiroshi Okada; Akihiro Wakahara; Akira Yoshida; Takeshi Ohshima; Hisayoshi Itoh; Shirou Kawakita; Mitsuru Imaizumi; Sumio Matsuda

doi:10.1002/pssa.200306669

Effects of high-energy proton irradiation on the density and hall mobility of majority carriers in single crystalline n-type CuInSe₂ thin films

Hae Seok Lee, Hiroshi Okada, Akihiro Wakahara, Akira Yoshida, Takeshi Ohshima, Hisayoshi Itoh, Shirou Kawakita, Mitsuru Imaizumi, Sumio Matsuda

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Proton irradiation effects in CuInSe₂ (CIS) thin films have been investigated as a function of proton energy (0.38, 1 and 3 MeV). Single crystalline n-CIS thin films were prepared by radio frequency sputtering. The electrical properties of as-grown and irradiated samples were measured. The typical electron concentration and Hall mobility in as-grown samples were 4 × 10¹⁶ cm^-3 and 120 cm²/Vs, respectively. After 0.38 and 1MeV proton irradiation, both of the electron concentration and Hall mobility were decreased as the fluence exceeded 1 × 10¹³ cm^-2, but for 3 MeV proton irradiation, they were decreased over the fluence of 1 × 10¹⁴ cm^-2. The damage by high-energy proton irradiation was lower than that by low-energy proton irradiation. The carrier removal rate with proton fluence was estimated about from 1800 to 300 cm^-1 as proton energy was changed from 0.38 to 3 MeV.

Original language	English
Pages (from-to)	471-474
Number of pages	4
Journal	Physica Status Solidi (A) Applied Research
Volume	199
Issue number	3
DOIs	https://doi.org/10.1002/pssa.200306669
Publication status	Published - 2003 Oct
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "Effects of high-energy proton irradiation on the density and hall mobility of majority carriers in single crystalline n-type CuInSe2 thin films",

abstract = "Proton irradiation effects in CuInSe2 (CIS) thin films have been investigated as a function of proton energy (0.38, 1 and 3 MeV). Single crystalline n-CIS thin films were prepared by radio frequency sputtering. The electrical properties of as-grown and irradiated samples were measured. The typical electron concentration and Hall mobility in as-grown samples were 4 × 1016 cm-3 and 120 cm2/Vs, respectively. After 0.38 and 1MeV proton irradiation, both of the electron concentration and Hall mobility were decreased as the fluence exceeded 1 × 1013 cm-2, but for 3 MeV proton irradiation, they were decreased over the fluence of 1 × 1014 cm-2. The damage by high-energy proton irradiation was lower than that by low-energy proton irradiation. The carrier removal rate with proton fluence was estimated about from 1800 to 300 cm-1 as proton energy was changed from 0.38 to 3 MeV.",

author = "Lee, {Hae Seok} and Hiroshi Okada and Akihiro Wakahara and Akira Yoshida and Takeshi Ohshima and Hisayoshi Itoh and Shirou Kawakita and Mitsuru Imaizumi and Sumio Matsuda",

year = "2003",

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doi = "10.1002/pssa.200306669",

language = "English",

volume = "199",

pages = "471--474",

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TY - JOUR

T1 - Effects of high-energy proton irradiation on the density and hall mobility of majority carriers in single crystalline n-type CuInSe2 thin films

AU - Lee, Hae Seok

AU - Okada, Hiroshi

AU - Wakahara, Akihiro

AU - Yoshida, Akira

AU - Ohshima, Takeshi

AU - Itoh, Hisayoshi

AU - Kawakita, Shirou

AU - Imaizumi, Mitsuru

AU - Matsuda, Sumio

PY - 2003/10

Y1 - 2003/10

N2 - Proton irradiation effects in CuInSe2 (CIS) thin films have been investigated as a function of proton energy (0.38, 1 and 3 MeV). Single crystalline n-CIS thin films were prepared by radio frequency sputtering. The electrical properties of as-grown and irradiated samples were measured. The typical electron concentration and Hall mobility in as-grown samples were 4 × 1016 cm-3 and 120 cm2/Vs, respectively. After 0.38 and 1MeV proton irradiation, both of the electron concentration and Hall mobility were decreased as the fluence exceeded 1 × 1013 cm-2, but for 3 MeV proton irradiation, they were decreased over the fluence of 1 × 1014 cm-2. The damage by high-energy proton irradiation was lower than that by low-energy proton irradiation. The carrier removal rate with proton fluence was estimated about from 1800 to 300 cm-1 as proton energy was changed from 0.38 to 3 MeV.

AB - Proton irradiation effects in CuInSe2 (CIS) thin films have been investigated as a function of proton energy (0.38, 1 and 3 MeV). Single crystalline n-CIS thin films were prepared by radio frequency sputtering. The electrical properties of as-grown and irradiated samples were measured. The typical electron concentration and Hall mobility in as-grown samples were 4 × 1016 cm-3 and 120 cm2/Vs, respectively. After 0.38 and 1MeV proton irradiation, both of the electron concentration and Hall mobility were decreased as the fluence exceeded 1 × 1013 cm-2, but for 3 MeV proton irradiation, they were decreased over the fluence of 1 × 1014 cm-2. The damage by high-energy proton irradiation was lower than that by low-energy proton irradiation. The carrier removal rate with proton fluence was estimated about from 1800 to 300 cm-1 as proton energy was changed from 0.38 to 3 MeV.

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DO - 10.1002/pssa.200306669

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SP - 471

EP - 474

JO - Physica Status Solidi (A) Applied Research

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SN - 0031-8965

IS - 3

ER -

Effects of high-energy proton irradiation on the density and hall mobility of majority carriers in single crystalline n-type CuInSe₂ thin films

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