Effects of high-energy proton irradiation on the density and hall mobility of majority carriers in single crystalline n-type CuInSe2 thin films

Hae Seok Lee; Hiroshi Okada; Akihiro Wakahara; Akira Yoshida; Takeshi Ohshima; Hisayoshi Itoh; Shirou Kawakita; Mitsuru Imaizumi; Sumio Matsuda

doi:10.1002/pssa.200306669

Effects of high-energy proton irradiation on the density and hall mobility of majority carriers in single crystalline n-type CuInSe₂ thin films

Hae Seok Lee, Hiroshi Okada, Akihiro Wakahara, Akira Yoshida, Takeshi Ohshima, Hisayoshi Itoh, Shirou Kawakita, Mitsuru Imaizumi, Sumio Matsuda

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Proton irradiation effects in CuInSe₂ (CIS) thin films have been investigated as a function of proton energy (0.38, 1 and 3 MeV). Single crystalline n-CIS thin films were prepared by radio frequency sputtering. The electrical properties of as-grown and irradiated samples were measured. The typical electron concentration and Hall mobility in as-grown samples were 4 × 10¹⁶ cm^-3 and 120 cm²/Vs, respectively. After 0.38 and 1MeV proton irradiation, both of the electron concentration and Hall mobility were decreased as the fluence exceeded 1 × 10¹³ cm^-2, but for 3 MeV proton irradiation, they were decreased over the fluence of 1 × 10¹⁴ cm^-2. The damage by high-energy proton irradiation was lower than that by low-energy proton irradiation. The carrier removal rate with proton fluence was estimated about from 1800 to 300 cm^-1 as proton energy was changed from 0.38 to 3 MeV.

Original language	English
Pages (from-to)	471-474
Number of pages	4
Journal	Physica Status Solidi (A) Applied Research
Volume	199
Issue number	3
DOIs	https://doi.org/10.1002/pssa.200306669
Publication status	Published - 2003 Oct
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1002/pssa.200306669

Fingerprint Dive into the research topics of 'Effects of high-energy proton irradiation on the density and hall mobility of majority carriers in single crystalline n-type CuInSe<sub>2</sub> thin films'. Together they form a unique fingerprint.

Cite this

Effects of high-energy proton irradiation on the density and hall mobility of majority carriers in single crystalline n-type CuInSe₂ thin films. / Lee, Hae Seok; Okada, Hiroshi; Wakahara, Akihiro; Yoshida, Akira; Ohshima, Takeshi; Itoh, Hisayoshi; Kawakita, Shirou; Imaizumi, Mitsuru; Matsuda, Sumio.

In: Physica Status Solidi (A) Applied Research, Vol. 199, No. 3, 10.2003, p. 471-474.

Research output: Contribution to journal › Article › peer-review

Lee, Hae Seok ; Okada, Hiroshi ; Wakahara, Akihiro ; Yoshida, Akira ; Ohshima, Takeshi ; Itoh, Hisayoshi ; Kawakita, Shirou ; Imaizumi, Mitsuru ; Matsuda, Sumio. / Effects of high-energy proton irradiation on the density and hall mobility of majority carriers in single crystalline n-type CuInSe₂ thin films. In: Physica Status Solidi (A) Applied Research. 2003 ; Vol. 199, No. 3. pp. 471-474.

@article{f0d12139452c4431bcdcd52265a68bf4,

title = "Effects of high-energy proton irradiation on the density and hall mobility of majority carriers in single crystalline n-type CuInSe2 thin films",

abstract = "Proton irradiation effects in CuInSe2 (CIS) thin films have been investigated as a function of proton energy (0.38, 1 and 3 MeV). Single crystalline n-CIS thin films were prepared by radio frequency sputtering. The electrical properties of as-grown and irradiated samples were measured. The typical electron concentration and Hall mobility in as-grown samples were 4 × 1016 cm-3 and 120 cm2/Vs, respectively. After 0.38 and 1MeV proton irradiation, both of the electron concentration and Hall mobility were decreased as the fluence exceeded 1 × 1013 cm-2, but for 3 MeV proton irradiation, they were decreased over the fluence of 1 × 1014 cm-2. The damage by high-energy proton irradiation was lower than that by low-energy proton irradiation. The carrier removal rate with proton fluence was estimated about from 1800 to 300 cm-1 as proton energy was changed from 0.38 to 3 MeV.",

author = "Lee, {Hae Seok} and Hiroshi Okada and Akihiro Wakahara and Akira Yoshida and Takeshi Ohshima and Hisayoshi Itoh and Shirou Kawakita and Mitsuru Imaizumi and Sumio Matsuda",

year = "2003",

month = oct,

doi = "10.1002/pssa.200306669",

language = "English",

volume = "199",

pages = "471--474",

journal = "Physica Status Solidi (A) Applied Research",

issn = "0031-8965",

publisher = "Wiley-VCH Verlag",

number = "3",

}

TY - JOUR

T1 - Effects of high-energy proton irradiation on the density and hall mobility of majority carriers in single crystalline n-type CuInSe2 thin films

AU - Lee, Hae Seok

AU - Okada, Hiroshi

AU - Wakahara, Akihiro

AU - Yoshida, Akira

AU - Ohshima, Takeshi

AU - Itoh, Hisayoshi

AU - Kawakita, Shirou

AU - Imaizumi, Mitsuru

AU - Matsuda, Sumio

PY - 2003/10

Y1 - 2003/10

N2 - Proton irradiation effects in CuInSe2 (CIS) thin films have been investigated as a function of proton energy (0.38, 1 and 3 MeV). Single crystalline n-CIS thin films were prepared by radio frequency sputtering. The electrical properties of as-grown and irradiated samples were measured. The typical electron concentration and Hall mobility in as-grown samples were 4 × 1016 cm-3 and 120 cm2/Vs, respectively. After 0.38 and 1MeV proton irradiation, both of the electron concentration and Hall mobility were decreased as the fluence exceeded 1 × 1013 cm-2, but for 3 MeV proton irradiation, they were decreased over the fluence of 1 × 1014 cm-2. The damage by high-energy proton irradiation was lower than that by low-energy proton irradiation. The carrier removal rate with proton fluence was estimated about from 1800 to 300 cm-1 as proton energy was changed from 0.38 to 3 MeV.

AB - Proton irradiation effects in CuInSe2 (CIS) thin films have been investigated as a function of proton energy (0.38, 1 and 3 MeV). Single crystalline n-CIS thin films were prepared by radio frequency sputtering. The electrical properties of as-grown and irradiated samples were measured. The typical electron concentration and Hall mobility in as-grown samples were 4 × 1016 cm-3 and 120 cm2/Vs, respectively. After 0.38 and 1MeV proton irradiation, both of the electron concentration and Hall mobility were decreased as the fluence exceeded 1 × 1013 cm-2, but for 3 MeV proton irradiation, they were decreased over the fluence of 1 × 1014 cm-2. The damage by high-energy proton irradiation was lower than that by low-energy proton irradiation. The carrier removal rate with proton fluence was estimated about from 1800 to 300 cm-1 as proton energy was changed from 0.38 to 3 MeV.

UR - http://www.scopus.com/inward/record.url?scp=0344063535&partnerID=8YFLogxK

U2 - 10.1002/pssa.200306669

DO - 10.1002/pssa.200306669

M3 - Article

AN - SCOPUS:0344063535

VL - 199

SP - 471

EP - 474

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

SN - 0031-8965

IS - 3