Abstract
Proton irradiation effects in CuInSe2 (CIS) thin films have been investigated as a function of proton energy (0.38, 1 and 3 MeV). Single crystalline n-CIS thin films were prepared by radio frequency sputtering. The electrical properties of as-grown and irradiated samples were measured. The typical electron concentration and Hall mobility in as-grown samples were 4 × 1016 cm-3 and 120 cm2/Vs, respectively. After 0.38 and 1MeV proton irradiation, both of the electron concentration and Hall mobility were decreased as the fluence exceeded 1 × 1013 cm-2, but for 3 MeV proton irradiation, they were decreased over the fluence of 1 × 1014 cm-2. The damage by high-energy proton irradiation was lower than that by low-energy proton irradiation. The carrier removal rate with proton fluence was estimated about from 1800 to 300 cm-1 as proton energy was changed from 0.38 to 3 MeV.
| Original language | English |
|---|---|
| Pages (from-to) | 471-474 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (A) Applied Research |
| Volume | 199 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2003 Oct 1 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Effects of high-energy proton irradiation on the density and hall mobility of majority carriers in single crystalline n-type CuInSe2 thin films. / Lee, Haeseok; Okada, Hiroshi; Wakahara, Akihiro; Yoshida, Akira; Ohshima, Takeshi; Itoh, Hisayoshi; Kawakita, Shirou; Imaizumi, Mitsuru; Matsuda, Sumio.
In: Physica Status Solidi (A) Applied Research, Vol. 199, No. 3, 01.10.2003, p. 471-474.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Effects of high-energy proton irradiation on the density and hall mobility of majority carriers in single crystalline n-type CuInSe2 thin films
AU - Lee, Haeseok
AU - Okada, Hiroshi
AU - Wakahara, Akihiro
AU - Yoshida, Akira
AU - Ohshima, Takeshi
AU - Itoh, Hisayoshi
AU - Kawakita, Shirou
AU - Imaizumi, Mitsuru
AU - Matsuda, Sumio
PY - 2003/10/1
Y1 - 2003/10/1
N2 - Proton irradiation effects in CuInSe2 (CIS) thin films have been investigated as a function of proton energy (0.38, 1 and 3 MeV). Single crystalline n-CIS thin films were prepared by radio frequency sputtering. The electrical properties of as-grown and irradiated samples were measured. The typical electron concentration and Hall mobility in as-grown samples were 4 × 1016 cm-3 and 120 cm2/Vs, respectively. After 0.38 and 1MeV proton irradiation, both of the electron concentration and Hall mobility were decreased as the fluence exceeded 1 × 1013 cm-2, but for 3 MeV proton irradiation, they were decreased over the fluence of 1 × 1014 cm-2. The damage by high-energy proton irradiation was lower than that by low-energy proton irradiation. The carrier removal rate with proton fluence was estimated about from 1800 to 300 cm-1 as proton energy was changed from 0.38 to 3 MeV.
AB - Proton irradiation effects in CuInSe2 (CIS) thin films have been investigated as a function of proton energy (0.38, 1 and 3 MeV). Single crystalline n-CIS thin films were prepared by radio frequency sputtering. The electrical properties of as-grown and irradiated samples were measured. The typical electron concentration and Hall mobility in as-grown samples were 4 × 1016 cm-3 and 120 cm2/Vs, respectively. After 0.38 and 1MeV proton irradiation, both of the electron concentration and Hall mobility were decreased as the fluence exceeded 1 × 1013 cm-2, but for 3 MeV proton irradiation, they were decreased over the fluence of 1 × 1014 cm-2. The damage by high-energy proton irradiation was lower than that by low-energy proton irradiation. The carrier removal rate with proton fluence was estimated about from 1800 to 300 cm-1 as proton energy was changed from 0.38 to 3 MeV.
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U2 - 10.1002/pssa.200306669
DO - 10.1002/pssa.200306669
M3 - Article
AN - SCOPUS:0344063535
VL - 199
SP - 471
EP - 474
JO - Physica Status Solidi (A) Applied Research
JF - Physica Status Solidi (A) Applied Research
SN - 0031-8965
IS - 3
ER -