Effects of high-energy proton irradiation on the density and hall mobility of majority carriers in single crystalline n-type CuInSe₂ thin films

Proton irradiation effects in CuInSe₂ (CIS) thin films have been investigated as a function of proton energy (0.38, 1 and 3 MeV). Single crystalline n-CIS thin films were prepared by radio frequency sputtering. The electrical properties of as-grown and irradiated samples were measured. The typical electron concentration and Hall mobility in as-grown samples were 4 × 10¹⁶ cm^-3 and 120 cm²/Vs, respectively. After 0.38 and 1MeV proton irradiation, both of the electron concentration and Hall mobility were decreased as the fluence exceeded 1 × 10¹³ cm^-2, but for 3 MeV proton irradiation, they were decreased over the fluence of 1 × 10¹⁴ cm^-2. The damage by high-energy proton irradiation was lower than that by low-energy proton irradiation. The carrier removal rate with proton fluence was estimated about from 1800 to 300 cm^-1 as proton energy was changed from 0.38 to 3 MeV.