Effects of hillocks and post-growth annealing on electrical properties in GaN grown by metalorganic chemical vapor deposition

In-Hwan Lee, In Hoon Choi, Cheul Ro Lee, Sung Jin Son, Jae Young Leem, Sam Kyu Noh

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We have studied the effects of growth conditions of GaN buffer layer on the properties of GaN epilayer which was grown by metalorganic chemical vapor deposition technique. As nucleus size was increased by growth conditions of the GaN buffer layer, hillocks dominated surface morphology. The hillocks were detrimental to the electrical properties of GaN epilayer because they enhance the incorporation of electrically active impurities. From post-growth annealing, it was proposed that dislocations and/or carbon are the electron Hall mobility limiting compensators.

Original languageEnglish
Pages (from-to)309-313
Number of pages5
JournalJournal of Crystal Growth
Volume182
Issue number3-4
DOIs
Publication statusPublished - 1997 Jan 1

Fingerprint

Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
Electric properties
Epilayers
electrical properties
Annealing
Buffer layers
annealing
buffers
Hall mobility
compensators
Surface morphology
Carbon
Impurities
impurities
nuclei
Electrons
carbon
electrons

Keywords

  • Gallium nitride
  • Hall mobility
  • MOCVD
  • Post-growth annealing
  • Surface morphology

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Effects of hillocks and post-growth annealing on electrical properties in GaN grown by metalorganic chemical vapor deposition. / Lee, In-Hwan; Choi, In Hoon; Lee, Cheul Ro; Son, Sung Jin; Leem, Jae Young; Noh, Sam Kyu.

In: Journal of Crystal Growth, Vol. 182, No. 3-4, 01.01.1997, p. 309-313.

Research output: Contribution to journalArticle

Lee, In-Hwan ; Choi, In Hoon ; Lee, Cheul Ro ; Son, Sung Jin ; Leem, Jae Young ; Noh, Sam Kyu. / Effects of hillocks and post-growth annealing on electrical properties in GaN grown by metalorganic chemical vapor deposition. In: Journal of Crystal Growth. 1997 ; Vol. 182, No. 3-4. pp. 309-313.
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