Effects of hydrogen implantation on the structural and electrical properties of nickel silicide

Chel Jong Choi, Young Woo Ok, Shiva S. Hullavarad, Tae Yeon Seong, Key Min Lee, Joo Hyoung Lee, Young Jin Park

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

The effects of hydrogen implantation on the structural and electrical properties of nickel silicide have been investigated. Ni films (30 nm) are electron-beam-evaporated on Si substrates, after which plasma immersion ion implantation is used to introduce hydrogen ions into the Ni films at an energy of 350 eV to a dose of 1 × 1016 cm-2. For nickel silicidation reactions, rapid thermal annealing is carried out in the range of 400-750°C for 30 s in a nitrogen atmosphere. It is shown that the implanted samples produce lower sheet resistances than the unimplanted samples across the whole annealing temperature range. X-ray diffraction results show that, regardless of the hydrogen implantation, NiSi is transformed into NiSi2 at temperatures in excess of 700°C. X-ray photoemission spectroscopy results show that the hydrogen implantation plays a role in reducing the nickel oxide layer. Compared to the unimplanted samples, the implanted samples exhibit better surfaces and uniform NiSi/Si interface morphologies. Transmission electron microscopy results show that the grain sizes of the implanted sample are smaller than those of the unimplanted sample. It is further shown that the implanted samples are thermally more stable than the unimplanted samples, which is attributed to the difference in the grain sizes of the nickel silicide films.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume149
Issue number9
DOIs
Publication statusPublished - 2002 Sep 1
Externally publishedYes

Fingerprint

Structural properties
Hydrogen
implantation
Electric properties
electrical properties
Nickel
nickel
hydrogen
Rapid thermal annealing
Sheet resistance
Photoelectron spectroscopy
X ray spectroscopy
Ion implantation
Nickel oxide
Protons
Electron beams
Nitrogen
Annealing
Transmission electron microscopy
Plasmas

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Effects of hydrogen implantation on the structural and electrical properties of nickel silicide. / Choi, Chel Jong; Ok, Young Woo; Hullavarad, Shiva S.; Seong, Tae Yeon; Lee, Key Min; Lee, Joo Hyoung; Park, Young Jin.

In: Journal of the Electrochemical Society, Vol. 149, No. 9, 01.09.2002.

Research output: Contribution to journalArticle

Choi, Chel Jong ; Ok, Young Woo ; Hullavarad, Shiva S. ; Seong, Tae Yeon ; Lee, Key Min ; Lee, Joo Hyoung ; Park, Young Jin. / Effects of hydrogen implantation on the structural and electrical properties of nickel silicide. In: Journal of the Electrochemical Society. 2002 ; Vol. 149, No. 9.
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