Effects of implanted materials on impurity-induced layer disordering in strained Ga0.8In0.2As/GaxIn1-xAs yP1-y/Ga0.51In0.49P/GaAs quantum well structure

Dong Hoon Jang; Jung Kee Lee; Kyung Hyun Park; Ho Sung Cho; Tae Yeon Seong; Chul Soon Park; Kwang Eui Pyun

doi:10.1143/jjap.36.l1364

Effects of implanted materials on impurity-induced layer disordering in strained Ga_0.8In_0.2As/Ga_xIn_1-xAs _yP_1-y/Ga_0.51In_0.49P/GaAs quantum well structure

Dong Hoon Jang, Jung Kee Lee, Kyung Hyun Park, Ho Sung Cho, Tae Yeon Seong, Chul Soon Park, Kwang Eui Pyun

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The impurity-induced layer disordering in B- or Si-implanted Ga_0.8In_0.2As/Ga_xIn_1-xAs _yP_1-y/Ga_0.51In_0.49P /GaAs quantum well structure has been studied. The wavelength shift of the photoluminescence peak and the degree of intermixing can be determined by the type and energy of implanted ions with followed annealing at the temperature of 900°C. A photoluminescence peak shift of 70 meV was obtained by 120 keV Si-implantation and annealing at 900°C. The diffused interface was also studied by cross sectional transmission electron microscopy.

Original language	English
Pages (from-to)	L1364-L1366
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	36
Issue number	10 SUPPL. B
DOIs	https://doi.org/10.1143/jjap.36.l1364
Publication status	Published - 1997 Oct 15
Externally published	Yes

Keywords

Implantation
Impurity-induced layer disordering (IILD)
Quantum well
Transmission electron microscopy (TEM)

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.36.l1364

Cite this

Jang, D. H., Lee, J. K., Park, K. H., Cho, H. S., Seong, T. Y., Park, C. S., & Pyun, K. E. (1997). Effects of implanted materials on impurity-induced layer disordering in strained Ga_0.8In_0.2As/Ga_xIn_1-xAs _yP_1-y/Ga_0.51In_0.49P/GaAs quantum well structure. Japanese Journal of Applied Physics, Part 2: Letters, 36(10 SUPPL. B), L1364-L1366. https://doi.org/10.1143/jjap.36.l1364

Effects of implanted materials on impurity-induced layer disordering in strained Ga_0.8In_0.2As/Ga_xIn_1-xAs _yP_1-y/Ga_0.51In_0.49P/GaAs quantum well structure. / Jang, Dong Hoon; Lee, Jung Kee; Park, Kyung Hyun et al.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 36, No. 10 SUPPL. B, 15.10.1997, p. L1364-L1366.

Research output: Contribution to journal › Article › peer-review

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abstract = "The impurity-induced layer disordering in B- or Si-implanted Ga0.8In0.2As/GaxIn1-xAs yP1-y/Ga0.51In0.49P /GaAs quantum well structure has been studied. The wavelength shift of the photoluminescence peak and the degree of intermixing can be determined by the type and energy of implanted ions with followed annealing at the temperature of 900°C. A photoluminescence peak shift of 70 meV was obtained by 120 keV Si-implantation and annealing at 900°C. The diffused interface was also studied by cross sectional transmission electron microscopy.",

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