Effects of implanted materials on impurity-induced layer disordering in strained Ga0.8In0.2As/GaxIn1-xAs yP1-y/Ga0.51In0.49P/GaAs quantum well structure

Dong Hoon Jang, Jung Kee Lee, Kyung Hyun Park, Ho Sung Cho, Tae Yeon Seong, Chul Soon Park, Kwang Eui Pyun

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Abstract

The impurity-induced layer disordering in B- or Si-implanted Ga0.8In0.2As/GaxIn1-xAs yP1-y/Ga0.51In0.49P /GaAs quantum well structure has been studied. The wavelength shift of the photoluminescence peak and the degree of intermixing can be determined by the type and energy of implanted ions with followed annealing at the temperature of 900°C. A photoluminescence peak shift of 70 meV was obtained by 120 keV Si-implantation and annealing at 900°C. The diffused interface was also studied by cross sectional transmission electron microscopy.

Original languageEnglish
Pages (from-to)L1364-L1366
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume36
Issue number10 SUPPL. B
DOIs
Publication statusPublished - 1997 Oct 15
Externally publishedYes

Keywords

  • Implantation
  • Impurity-induced layer disordering (IILD)
  • Quantum well
  • Transmission electron microscopy (TEM)

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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