Effects of implanted materials on impurity-induced layer disordering in strained Ga0.8In0.2As/GaxIn1-xAs yP1-y/Ga0.51In0.49P/GaAs quantum well structure

Dong Hoon Jang, Jung Kee Lee, Kyung Hyun Park, Ho Sung Cho, Tae Yeon Seong, Chul Soon Park, Kwang Eui Pyun

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