Effects of in-situ NH 3 post plasma treatment on the surface passivation layer

Kyung Dong Lee, Min Gu Kang, Young Do Kim, Sung Ju Tark, Sungeun Park, Donghwan Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Hydrogenated silicon nitride (SiN x:H) using plasma enhanced chemical vapor deposition is widely used in photovoltaic industry as an antireflection coating and passivation layer. The samples with or without in-situ NH 3 post-plasma treatment had the following structures: SiN x/N-type Si/SiN x versus in-situ NH 3 post-plasma treated SiN x/N-type Si/SiN x. The wafer was dipped in saw-damage-etching solution and wet cleaning process was treated. After the dry process with N 2 atmosphere, SiN x thin film was deposited on back surface. Then SiN x thin film was deposited on the front surface with or without in-situ NH 3 post-plasma treatment process. In order to minimize the plasma induced surface damage, we used lower power than the process power during the NH 3 post-plasma treatment. After the in-situ NH 3 post-plasma-treatment, we analyzed the effect of this in-situ NH 3 post-plasma-treatment for passivation. The minority carrier lifetime was observed by means of quasi-steady-state photoconductance and microwave photoconductance.

Original languageEnglish
Title of host publicationAIP Conference Proceedings
Pages207-208
Number of pages2
Volume1399
DOIs
Publication statusPublished - 2011 Dec 1
Event30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of
Duration: 2010 Jul 252010 Jul 30

Other

Other30th International Conference on the Physics of Semiconductors, ICPS-30
CountryKorea, Republic of
CitySeoul
Period10/7/2510/7/30

Fingerprint

passivity
damage
quasi-steady states
antireflection coatings
carrier lifetime
thin films
minority carriers
silicon nitrides
cleaning
industries
etching
vapor deposition
wafers
microwaves
atmospheres

Keywords

  • minority carrier lifetime
  • NH post plasma treatment
  • Passivation
  • PECVD
  • SiN

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Lee, K. D., Kang, M. G., Kim, Y. D., Tark, S. J., Park, S., & Kim, D. (2011). Effects of in-situ NH 3 post plasma treatment on the surface passivation layer. In AIP Conference Proceedings (Vol. 1399, pp. 207-208) https://doi.org/10.1063/1.3666328

Effects of in-situ NH 3 post plasma treatment on the surface passivation layer. / Lee, Kyung Dong; Kang, Min Gu; Kim, Young Do; Tark, Sung Ju; Park, Sungeun; Kim, Donghwan.

AIP Conference Proceedings. Vol. 1399 2011. p. 207-208.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lee, KD, Kang, MG, Kim, YD, Tark, SJ, Park, S & Kim, D 2011, Effects of in-situ NH 3 post plasma treatment on the surface passivation layer. in AIP Conference Proceedings. vol. 1399, pp. 207-208, 30th International Conference on the Physics of Semiconductors, ICPS-30, Seoul, Korea, Republic of, 10/7/25. https://doi.org/10.1063/1.3666328
Lee KD, Kang MG, Kim YD, Tark SJ, Park S, Kim D. Effects of in-situ NH 3 post plasma treatment on the surface passivation layer. In AIP Conference Proceedings. Vol. 1399. 2011. p. 207-208 https://doi.org/10.1063/1.3666328
Lee, Kyung Dong ; Kang, Min Gu ; Kim, Young Do ; Tark, Sung Ju ; Park, Sungeun ; Kim, Donghwan. / Effects of in-situ NH 3 post plasma treatment on the surface passivation layer. AIP Conference Proceedings. Vol. 1399 2011. pp. 207-208
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