Effects of induced anisotropy on the bit stability and switching field in magnetic random access memory

K. S. Kim, K. H. Shin, Sang Ho Lim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

One of the features of the new spin-flop switching method with its wide writing window is to use a trilayer synthetic antiferromagnet (SyAF) with circular geometry as the free layer structure. For circular cells with zero in-plane shape anisotropy, the bi-stability of bits is achieved through the formation of induced anisotropy. Both the bi-stability and spin alignment become poor at a small induced anisotropy. On the other hand, a large induced anisotropy has an adverse effect of increasing the switching field. The switching field increase is more pronounced at higher antiferromagnetic exchange coupling of the trilayer SyAF. Our systematic investigations show that the suitable magnitude of induced anisotropy field is in the range 15-20 Oe.

Original languageEnglish
Pages (from-to)326-332
Number of pages7
JournalJournal of Magnetism and Magnetic Materials
Volume309
Issue number2
DOIs
Publication statusPublished - 2007 Feb 1

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random access memory
Anisotropy
Data storage equipment
anisotropy
Exchange coupling
alignment
Geometry
geometry
cells

Keywords

  • Bit stability
  • Induced anisotropy
  • Magnetic random access memory
  • Spin-flop switching
  • Switching field

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Effects of induced anisotropy on the bit stability and switching field in magnetic random access memory. / Kim, K. S.; Shin, K. H.; Lim, Sang Ho.

In: Journal of Magnetism and Magnetic Materials, Vol. 309, No. 2, 01.02.2007, p. 326-332.

Research output: Contribution to journalArticle

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