Effects of intrinsic ZnO buffer layer based on P3HT/PCBM organic solar cells with Al-doped ZnO electrode

Sungeun Park, Sung Ju Tark, Joon Sung Lee, Heejin Lim, Donghwan Kim

Research output: Contribution to journalArticle

72 Citations (Scopus)

Abstract

Organic solar cell devices were fabricated using poly(3-hexylthiophene) (P3HT) and 6,6-phenyl C61-butyric acid methyl ester (PCBM), which play the role of an electron donor and acceptor, respectively. The transparent electrode of organic solar cells, indium tin oxide (ITO), was replaced by Al-doped ZnO (AZO). ZnO has been studied extensively in recent years on account of its high optical transmittance, electrical conduction and low material cost. This paper reports organic solar cells based on Al-doped ZnO as an alternative to ITO. Organic solar cells with intrinsic ZnO inserted between the P3HT/PCBM layer and AZO were also fabricated. The intrinsic ZnO layer prevented the shunt path in the device. The performance of the cells with a layer of intrinsic ZnO was superior to that without the intrinsic ZnO layer.

Original languageEnglish
Pages (from-to)1020-1023
Number of pages4
JournalSolar Energy Materials and Solar Cells
Volume93
Issue number6-7
DOIs
Publication statusPublished - 2009 Jun

Keywords

  • Intrinsic ZnO
  • Organic solar cells
  • Shunt resistance
  • ZnO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

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