Effects of laterally overgrown n-GaN thickness on defect and deep level concentrations

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, E. B. Yakimov, P. S. Vergeles, In-Hwan Lee, Cheul Ro Lee, S. J. Pearton

Research output: Contribution to journalArticle

39 Citations (Scopus)

Abstract

The effects of the layer thickness and of Si doping on the dislocation type and density, electron concentration, and deep trap spectra were studied for epitaxially laterally overgrown (ELOG) GaN films with the ELOG region thickness varying from 6 to 12 μm. Electron beam induced current imaging shows that for the thickest layers, the major part of the threading dislocations are filtered out while for thinner films they bend, but do not go out of play. The concentration of residual donors and major electron traps is found to decrease with increasing the film thickness. Si doping suppresses the concentration of the main electron trap with activation energy of 0.6 eV and enhances the concentration of the main hole trap at Ev +0.85 eV.

Original languageEnglish
Pages (from-to)990-994
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume26
Issue number3
DOIs
Publication statusPublished - 2008 Jun 9
Externally publishedYes

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Electron traps
Doping (additives)
traps
Hole traps
Defects
defects
Induced currents
Carrier concentration
Film thickness
Electron beams
Activation energy
Imaging techniques
Thin films
electrons
film thickness
electron beams
activation energy
thin films

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Yakimov, E. B., Vergeles, P. S., ... Pearton, S. J. (2008). Effects of laterally overgrown n-GaN thickness on defect and deep level concentrations. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 26(3), 990-994. https://doi.org/10.1116/1.2919148

Effects of laterally overgrown n-GaN thickness on defect and deep level concentrations. / Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Markov, A. V.; Yakimov, E. B.; Vergeles, P. S.; Lee, In-Hwan; Lee, Cheul Ro; Pearton, S. J.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 26, No. 3, 09.06.2008, p. 990-994.

Research output: Contribution to journalArticle

Polyakov, AY, Smirnov, NB, Govorkov, AV, Markov, AV, Yakimov, EB, Vergeles, PS, Lee, I-H, Lee, CR & Pearton, SJ 2008, 'Effects of laterally overgrown n-GaN thickness on defect and deep level concentrations', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 26, no. 3, pp. 990-994. https://doi.org/10.1116/1.2919148
Polyakov, A. Y. ; Smirnov, N. B. ; Govorkov, A. V. ; Markov, A. V. ; Yakimov, E. B. ; Vergeles, P. S. ; Lee, In-Hwan ; Lee, Cheul Ro ; Pearton, S. J. / Effects of laterally overgrown n-GaN thickness on defect and deep level concentrations. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2008 ; Vol. 26, No. 3. pp. 990-994.
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