Effects of laterally overgrown n-GaN thickness on defect and deep level concentrations

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, E. B. Yakimov, P. S. Vergeles, In-Hwan Lee, Cheul Ro Lee, S. J. Pearton

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

The effects of the layer thickness and of Si doping on the dislocation type and density, electron concentration, and deep trap spectra were studied for epitaxially laterally overgrown (ELOG) GaN films with the ELOG region thickness varying from 6 to 12 μm. Electron beam induced current imaging shows that for the thickest layers, the major part of the threading dislocations are filtered out while for thinner films they bend, but do not go out of play. The concentration of residual donors and major electron traps is found to decrease with increasing the film thickness. Si doping suppresses the concentration of the main electron trap with activation energy of 0.6 eV and enhances the concentration of the main hole trap at Ev +0.85 eV.

Original languageEnglish
Pages (from-to)990-994
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume26
Issue number3
DOIs
Publication statusPublished - 2008 Jun 9
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Effects of laterally overgrown n-GaN thickness on defect and deep level concentrations'. Together they form a unique fingerprint.

  • Cite this

    Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Yakimov, E. B., Vergeles, P. S., Lee, I-H., Lee, C. R., & Pearton, S. J. (2008). Effects of laterally overgrown n-GaN thickness on defect and deep level concentrations. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 26(3), 990-994. https://doi.org/10.1116/1.2919148