Effects of nanocrystalline structure and passivation on the photoluminescent properties of porous silicon carbide

Jonathan E. Spanier, G. S. Cargill, Irving P. Herman, Sangsig Kim, David R. Goldstein, Anthony D. Kurtz, Ben Z. Weiss

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

We present the results of an investigation of the dependence of the photoluminescence (PL) spectra on preparation conditions, the resulting microstructure, and post-anodization treatment of porous silicon carbide films which were formed from both p and n-type 6H-SiC substrates. Porous samples were prepared by anodic dissolution under different galvanostatic conditions, resulting in different porosities and crystallite sizes. Selected-area electron diffraction patterns taken on similarly prepared porous silicon carbide (PSC) samples confirmed that the films were monocrystalline. Transmission electron microscopy of as-anodized films revealed an isotropic porous network; a dependence of porosity and nanocrystallite size on porous layer formation current density was established. Some PSC samples were passivated using a short, thermal oxidation treatment. The effects of porosity and crystallite size, and of oxide passivation in these PSC films, on PL spectra and intensity were studied using a 365 nm Kr-ion laser as excitation. Under certain conditions, the spectrally integrated PL intensity of a passivated film is more than 450x that for the original bulk SiC substrate. PL spectra are presented, and possible mechanisms are discussed.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsR.W. Collins, P.M. Fauchet, I. Shimizu, J.C. Vial, T. Shimada, A.P. Alivisatos
PublisherMaterials Research Society
Pages491-496
Number of pages6
Volume452
Publication statusPublished - 1997
Externally publishedYes
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: 1996 Dec 21996 Dec 6

Other

OtherProceedings of the 1996 MRS Fall Meeting
CityBoston, MA, USA
Period96/12/296/12/6

Fingerprint

Porous silicon
Passivation
Silicon carbide
Photoluminescence
Porosity
Crystallite size
Substrates
Electron diffraction
Oxides
Diffraction patterns
Dissolution
Current density
silicon carbide
Ions
Transmission electron microscopy
Oxidation
Microstructure
Lasers

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Spanier, J. E., Cargill, G. S., Herman, I. P., Kim, S., Goldstein, D. R., Kurtz, A. D., & Weiss, B. Z. (1997). Effects of nanocrystalline structure and passivation on the photoluminescent properties of porous silicon carbide. In R. W. Collins, P. M. Fauchet, I. Shimizu, J. C. Vial, T. Shimada, & A. P. Alivisatos (Eds.), Materials Research Society Symposium - Proceedings (Vol. 452, pp. 491-496). Materials Research Society.

Effects of nanocrystalline structure and passivation on the photoluminescent properties of porous silicon carbide. / Spanier, Jonathan E.; Cargill, G. S.; Herman, Irving P.; Kim, Sangsig; Goldstein, David R.; Kurtz, Anthony D.; Weiss, Ben Z.

Materials Research Society Symposium - Proceedings. ed. / R.W. Collins; P.M. Fauchet; I. Shimizu; J.C. Vial; T. Shimada; A.P. Alivisatos. Vol. 452 Materials Research Society, 1997. p. 491-496.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Spanier, JE, Cargill, GS, Herman, IP, Kim, S, Goldstein, DR, Kurtz, AD & Weiss, BZ 1997, Effects of nanocrystalline structure and passivation on the photoluminescent properties of porous silicon carbide. in RW Collins, PM Fauchet, I Shimizu, JC Vial, T Shimada & AP Alivisatos (eds), Materials Research Society Symposium - Proceedings. vol. 452, Materials Research Society, pp. 491-496, Proceedings of the 1996 MRS Fall Meeting, Boston, MA, USA, 96/12/2.
Spanier JE, Cargill GS, Herman IP, Kim S, Goldstein DR, Kurtz AD et al. Effects of nanocrystalline structure and passivation on the photoluminescent properties of porous silicon carbide. In Collins RW, Fauchet PM, Shimizu I, Vial JC, Shimada T, Alivisatos AP, editors, Materials Research Society Symposium - Proceedings. Vol. 452. Materials Research Society. 1997. p. 491-496
Spanier, Jonathan E. ; Cargill, G. S. ; Herman, Irving P. ; Kim, Sangsig ; Goldstein, David R. ; Kurtz, Anthony D. ; Weiss, Ben Z. / Effects of nanocrystalline structure and passivation on the photoluminescent properties of porous silicon carbide. Materials Research Society Symposium - Proceedings. editor / R.W. Collins ; P.M. Fauchet ; I. Shimizu ; J.C. Vial ; T. Shimada ; A.P. Alivisatos. Vol. 452 Materials Research Society, 1997. pp. 491-496
@inproceedings{6ebf5f3c53024256a00e72c1196b955d,
title = "Effects of nanocrystalline structure and passivation on the photoluminescent properties of porous silicon carbide",
abstract = "We present the results of an investigation of the dependence of the photoluminescence (PL) spectra on preparation conditions, the resulting microstructure, and post-anodization treatment of porous silicon carbide films which were formed from both p and n-type 6H-SiC substrates. Porous samples were prepared by anodic dissolution under different galvanostatic conditions, resulting in different porosities and crystallite sizes. Selected-area electron diffraction patterns taken on similarly prepared porous silicon carbide (PSC) samples confirmed that the films were monocrystalline. Transmission electron microscopy of as-anodized films revealed an isotropic porous network; a dependence of porosity and nanocrystallite size on porous layer formation current density was established. Some PSC samples were passivated using a short, thermal oxidation treatment. The effects of porosity and crystallite size, and of oxide passivation in these PSC films, on PL spectra and intensity were studied using a 365 nm Kr-ion laser as excitation. Under certain conditions, the spectrally integrated PL intensity of a passivated film is more than 450x that for the original bulk SiC substrate. PL spectra are presented, and possible mechanisms are discussed.",
author = "Spanier, {Jonathan E.} and Cargill, {G. S.} and Herman, {Irving P.} and Sangsig Kim and Goldstein, {David R.} and Kurtz, {Anthony D.} and Weiss, {Ben Z.}",
year = "1997",
language = "English",
volume = "452",
pages = "491--496",
editor = "R.W. Collins and P.M. Fauchet and I. Shimizu and J.C. Vial and T. Shimada and A.P. Alivisatos",
booktitle = "Materials Research Society Symposium - Proceedings",
publisher = "Materials Research Society",

}

TY - GEN

T1 - Effects of nanocrystalline structure and passivation on the photoluminescent properties of porous silicon carbide

AU - Spanier, Jonathan E.

AU - Cargill, G. S.

AU - Herman, Irving P.

AU - Kim, Sangsig

AU - Goldstein, David R.

AU - Kurtz, Anthony D.

AU - Weiss, Ben Z.

PY - 1997

Y1 - 1997

N2 - We present the results of an investigation of the dependence of the photoluminescence (PL) spectra on preparation conditions, the resulting microstructure, and post-anodization treatment of porous silicon carbide films which were formed from both p and n-type 6H-SiC substrates. Porous samples were prepared by anodic dissolution under different galvanostatic conditions, resulting in different porosities and crystallite sizes. Selected-area electron diffraction patterns taken on similarly prepared porous silicon carbide (PSC) samples confirmed that the films were monocrystalline. Transmission electron microscopy of as-anodized films revealed an isotropic porous network; a dependence of porosity and nanocrystallite size on porous layer formation current density was established. Some PSC samples were passivated using a short, thermal oxidation treatment. The effects of porosity and crystallite size, and of oxide passivation in these PSC films, on PL spectra and intensity were studied using a 365 nm Kr-ion laser as excitation. Under certain conditions, the spectrally integrated PL intensity of a passivated film is more than 450x that for the original bulk SiC substrate. PL spectra are presented, and possible mechanisms are discussed.

AB - We present the results of an investigation of the dependence of the photoluminescence (PL) spectra on preparation conditions, the resulting microstructure, and post-anodization treatment of porous silicon carbide films which were formed from both p and n-type 6H-SiC substrates. Porous samples were prepared by anodic dissolution under different galvanostatic conditions, resulting in different porosities and crystallite sizes. Selected-area electron diffraction patterns taken on similarly prepared porous silicon carbide (PSC) samples confirmed that the films were monocrystalline. Transmission electron microscopy of as-anodized films revealed an isotropic porous network; a dependence of porosity and nanocrystallite size on porous layer formation current density was established. Some PSC samples were passivated using a short, thermal oxidation treatment. The effects of porosity and crystallite size, and of oxide passivation in these PSC films, on PL spectra and intensity were studied using a 365 nm Kr-ion laser as excitation. Under certain conditions, the spectrally integrated PL intensity of a passivated film is more than 450x that for the original bulk SiC substrate. PL spectra are presented, and possible mechanisms are discussed.

UR - http://www.scopus.com/inward/record.url?scp=0030687802&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030687802&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0030687802

VL - 452

SP - 491

EP - 496

BT - Materials Research Society Symposium - Proceedings

A2 - Collins, R.W.

A2 - Fauchet, P.M.

A2 - Shimizu, I.

A2 - Vial, J.C.

A2 - Shimada, T.

A2 - Alivisatos, A.P.

PB - Materials Research Society

ER -