Effects of nanometer-scale photonic crystal structures on the light extraction from GaN light-emitting diodes

Young Chul Shin, Dong Ho Kim, Dong Ju Chae, Ji Won Yang, Jae In Shim, Joong Mok Park, Kai Ming Ho, Kristen Constant, Han Youl Ryu, Tae Geun Kim

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

This paper reports on the effect of nanometer-scale photonic crystal structures on the enhancement of the light extraction in GaN light-emitting diodes. Photonic crystals with hole or pillar-patterned structures with lattice constants of 460, 600, 750, and 920 nm are fabricated on indium-doped tin oxide (ITO) electrodes and/or p-GaN layers using laser holography and reactive ion etching. It is found that the light extraction efficiency depends strongly on the distance between the photonic crystal and the active layer, as well as the lattice constant for both structures. Photonic crystal light-emitting diodes (LEDs) with a lattice constant of 750 nm and hole depths of 260 nm in the ITO layer show an increase in light extraction of up to 32%, compared to conventional LEDs, without degradation in the electrical properties while a maximum enhancement of 26% is obtained from the device with a lattice constant of 460 nm and pillar heights of 60 nm on the p-GaN layer. The dependence of the extraction efficiency on the lattice constant is also calculated using a 3-D finite-difference time-domain method and compared with experimental results.

Original languageEnglish
Article number5518522
Pages (from-to)1375-1380
Number of pages6
JournalIEEE Journal of Quantum Electronics
Volume46
Issue number9
DOIs
Publication statusPublished - 2010 Aug 6

Fingerprint

Photonic crystals
Lattice constants
Light emitting diodes
light emitting diodes
Crystal structure
photonics
crystal structure
Tin oxides
Indium
tin oxides
indium
crystals
Semiconductor diodes
augmentation
Finite difference time domain method
Holography
Reactive ion etching
finite difference time domain method
holography
Electric properties

Keywords

  • Gallium nitride
  • light extraction efficiency
  • light-emitting diode
  • photonic crystals

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Effects of nanometer-scale photonic crystal structures on the light extraction from GaN light-emitting diodes. / Shin, Young Chul; Kim, Dong Ho; Chae, Dong Ju; Yang, Ji Won; Shim, Jae In; Park, Joong Mok; Ho, Kai Ming; Constant, Kristen; Ryu, Han Youl; Kim, Tae Geun.

In: IEEE Journal of Quantum Electronics, Vol. 46, No. 9, 5518522, 06.08.2010, p. 1375-1380.

Research output: Contribution to journalArticle

Shin, YC, Kim, DH, Chae, DJ, Yang, JW, Shim, JI, Park, JM, Ho, KM, Constant, K, Ryu, HY & Kim, TG 2010, 'Effects of nanometer-scale photonic crystal structures on the light extraction from GaN light-emitting diodes', IEEE Journal of Quantum Electronics, vol. 46, no. 9, 5518522, pp. 1375-1380. https://doi.org/10.1109/JQE.2010.2049827
Shin, Young Chul ; Kim, Dong Ho ; Chae, Dong Ju ; Yang, Ji Won ; Shim, Jae In ; Park, Joong Mok ; Ho, Kai Ming ; Constant, Kristen ; Ryu, Han Youl ; Kim, Tae Geun. / Effects of nanometer-scale photonic crystal structures on the light extraction from GaN light-emitting diodes. In: IEEE Journal of Quantum Electronics. 2010 ; Vol. 46, No. 9. pp. 1375-1380.
@article{df08d6bcc8c4431a8ce25306fe97c3cd,
title = "Effects of nanometer-scale photonic crystal structures on the light extraction from GaN light-emitting diodes",
abstract = "This paper reports on the effect of nanometer-scale photonic crystal structures on the enhancement of the light extraction in GaN light-emitting diodes. Photonic crystals with hole or pillar-patterned structures with lattice constants of 460, 600, 750, and 920 nm are fabricated on indium-doped tin oxide (ITO) electrodes and/or p-GaN layers using laser holography and reactive ion etching. It is found that the light extraction efficiency depends strongly on the distance between the photonic crystal and the active layer, as well as the lattice constant for both structures. Photonic crystal light-emitting diodes (LEDs) with a lattice constant of 750 nm and hole depths of 260 nm in the ITO layer show an increase in light extraction of up to 32{\%}, compared to conventional LEDs, without degradation in the electrical properties while a maximum enhancement of 26{\%} is obtained from the device with a lattice constant of 460 nm and pillar heights of 60 nm on the p-GaN layer. The dependence of the extraction efficiency on the lattice constant is also calculated using a 3-D finite-difference time-domain method and compared with experimental results.",
keywords = "Gallium nitride, light extraction efficiency, light-emitting diode, photonic crystals",
author = "Shin, {Young Chul} and Kim, {Dong Ho} and Chae, {Dong Ju} and Yang, {Ji Won} and Shim, {Jae In} and Park, {Joong Mok} and Ho, {Kai Ming} and Kristen Constant and Ryu, {Han Youl} and Kim, {Tae Geun}",
year = "2010",
month = "8",
day = "6",
doi = "10.1109/JQE.2010.2049827",
language = "English",
volume = "46",
pages = "1375--1380",
journal = "IEEE Journal of Quantum Electronics",
issn = "0018-9197",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "9",

}

TY - JOUR

T1 - Effects of nanometer-scale photonic crystal structures on the light extraction from GaN light-emitting diodes

AU - Shin, Young Chul

AU - Kim, Dong Ho

AU - Chae, Dong Ju

AU - Yang, Ji Won

AU - Shim, Jae In

AU - Park, Joong Mok

AU - Ho, Kai Ming

AU - Constant, Kristen

AU - Ryu, Han Youl

AU - Kim, Tae Geun

PY - 2010/8/6

Y1 - 2010/8/6

N2 - This paper reports on the effect of nanometer-scale photonic crystal structures on the enhancement of the light extraction in GaN light-emitting diodes. Photonic crystals with hole or pillar-patterned structures with lattice constants of 460, 600, 750, and 920 nm are fabricated on indium-doped tin oxide (ITO) electrodes and/or p-GaN layers using laser holography and reactive ion etching. It is found that the light extraction efficiency depends strongly on the distance between the photonic crystal and the active layer, as well as the lattice constant for both structures. Photonic crystal light-emitting diodes (LEDs) with a lattice constant of 750 nm and hole depths of 260 nm in the ITO layer show an increase in light extraction of up to 32%, compared to conventional LEDs, without degradation in the electrical properties while a maximum enhancement of 26% is obtained from the device with a lattice constant of 460 nm and pillar heights of 60 nm on the p-GaN layer. The dependence of the extraction efficiency on the lattice constant is also calculated using a 3-D finite-difference time-domain method and compared with experimental results.

AB - This paper reports on the effect of nanometer-scale photonic crystal structures on the enhancement of the light extraction in GaN light-emitting diodes. Photonic crystals with hole or pillar-patterned structures with lattice constants of 460, 600, 750, and 920 nm are fabricated on indium-doped tin oxide (ITO) electrodes and/or p-GaN layers using laser holography and reactive ion etching. It is found that the light extraction efficiency depends strongly on the distance between the photonic crystal and the active layer, as well as the lattice constant for both structures. Photonic crystal light-emitting diodes (LEDs) with a lattice constant of 750 nm and hole depths of 260 nm in the ITO layer show an increase in light extraction of up to 32%, compared to conventional LEDs, without degradation in the electrical properties while a maximum enhancement of 26% is obtained from the device with a lattice constant of 460 nm and pillar heights of 60 nm on the p-GaN layer. The dependence of the extraction efficiency on the lattice constant is also calculated using a 3-D finite-difference time-domain method and compared with experimental results.

KW - Gallium nitride

KW - light extraction efficiency

KW - light-emitting diode

KW - photonic crystals

UR - http://www.scopus.com/inward/record.url?scp=77955135011&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77955135011&partnerID=8YFLogxK

U2 - 10.1109/JQE.2010.2049827

DO - 10.1109/JQE.2010.2049827

M3 - Article

AN - SCOPUS:77955135011

VL - 46

SP - 1375

EP - 1380

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

SN - 0018-9197

IS - 9

M1 - 5518522

ER -