Effects of Nb2O5 and SiO2 buffer layers on the suppression of potassium out-diffusion into indium tin oxide electrode formed on chemically strengthened glass

Chan Hwa Hong, Jae Heon Shin, Nae Man Park, Kyung Hyun Kim, Bo Sul Kim, Joon Seop Kwak, Byeong Kwon Ju, Woo Seok Cheong

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We have investigated the electrical properties of indium tin oxide (ITO) thin films deposited on chemically strengthened glass (CSG) substrate by room-temperature ionized physical vapor deposition (IPVD). The ITO thin film on the CSG substrate shows a higher sheet resistance after hightemperature anneal process (>200 °C) possibly due to the out-diffusion of potassium ions (K+) from the CSG. We have improved the electrical properties of the ITO thin film by inserting Nb2O5/SiO2 buffer layers between the ITO layer and the CSG substrate. As a result, a protected and index-matched 30-nm-thick ITO thin film with sheet resistance less than 120O/sq and optical transmittance higher than 90% (at 550 nm) has been achieved.

Original languageEnglish
Article number08NG01
JournalJapanese Journal of Applied Physics
Volume53
Issue number8 SPEC. ISSUE 3
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

Buffer layers
Tin oxides
indium oxides
Indium
tin oxides
Potassium
potassium
buffers
retarding
Oxide films
Glass
Electrodes
electrodes
glass
Thin films
Sheet resistance
thin films
Electric properties
Substrates
electrical properties

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Effects of Nb2O5 and SiO2 buffer layers on the suppression of potassium out-diffusion into indium tin oxide electrode formed on chemically strengthened glass. / Hong, Chan Hwa; Shin, Jae Heon; Park, Nae Man; Kim, Kyung Hyun; Kim, Bo Sul; Kwak, Joon Seop; Ju, Byeong Kwon; Cheong, Woo Seok.

In: Japanese Journal of Applied Physics, Vol. 53, No. 8 SPEC. ISSUE 3, 08NG01, 01.01.2014.

Research output: Contribution to journalArticle

Hong, Chan Hwa ; Shin, Jae Heon ; Park, Nae Man ; Kim, Kyung Hyun ; Kim, Bo Sul ; Kwak, Joon Seop ; Ju, Byeong Kwon ; Cheong, Woo Seok. / Effects of Nb2O5 and SiO2 buffer layers on the suppression of potassium out-diffusion into indium tin oxide electrode formed on chemically strengthened glass. In: Japanese Journal of Applied Physics. 2014 ; Vol. 53, No. 8 SPEC. ISSUE 3.
@article{19d236d9b3bd4994a3299a9c3ca38fef,
title = "Effects of Nb2O5 and SiO2 buffer layers on the suppression of potassium out-diffusion into indium tin oxide electrode formed on chemically strengthened glass",
abstract = "We have investigated the electrical properties of indium tin oxide (ITO) thin films deposited on chemically strengthened glass (CSG) substrate by room-temperature ionized physical vapor deposition (IPVD). The ITO thin film on the CSG substrate shows a higher sheet resistance after hightemperature anneal process (>200 °C) possibly due to the out-diffusion of potassium ions (K+) from the CSG. We have improved the electrical properties of the ITO thin film by inserting Nb2O5/SiO2 buffer layers between the ITO layer and the CSG substrate. As a result, a protected and index-matched 30-nm-thick ITO thin film with sheet resistance less than 120O/sq and optical transmittance higher than 90{\%} (at 550 nm) has been achieved.",
author = "Hong, {Chan Hwa} and Shin, {Jae Heon} and Park, {Nae Man} and Kim, {Kyung Hyun} and Kim, {Bo Sul} and Kwak, {Joon Seop} and Ju, {Byeong Kwon} and Cheong, {Woo Seok}",
year = "2014",
month = "1",
day = "1",
doi = "10.7567/JJAP.53.08NG01",
language = "English",
volume = "53",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "8 SPEC. ISSUE 3",

}

TY - JOUR

T1 - Effects of Nb2O5 and SiO2 buffer layers on the suppression of potassium out-diffusion into indium tin oxide electrode formed on chemically strengthened glass

AU - Hong, Chan Hwa

AU - Shin, Jae Heon

AU - Park, Nae Man

AU - Kim, Kyung Hyun

AU - Kim, Bo Sul

AU - Kwak, Joon Seop

AU - Ju, Byeong Kwon

AU - Cheong, Woo Seok

PY - 2014/1/1

Y1 - 2014/1/1

N2 - We have investigated the electrical properties of indium tin oxide (ITO) thin films deposited on chemically strengthened glass (CSG) substrate by room-temperature ionized physical vapor deposition (IPVD). The ITO thin film on the CSG substrate shows a higher sheet resistance after hightemperature anneal process (>200 °C) possibly due to the out-diffusion of potassium ions (K+) from the CSG. We have improved the electrical properties of the ITO thin film by inserting Nb2O5/SiO2 buffer layers between the ITO layer and the CSG substrate. As a result, a protected and index-matched 30-nm-thick ITO thin film with sheet resistance less than 120O/sq and optical transmittance higher than 90% (at 550 nm) has been achieved.

AB - We have investigated the electrical properties of indium tin oxide (ITO) thin films deposited on chemically strengthened glass (CSG) substrate by room-temperature ionized physical vapor deposition (IPVD). The ITO thin film on the CSG substrate shows a higher sheet resistance after hightemperature anneal process (>200 °C) possibly due to the out-diffusion of potassium ions (K+) from the CSG. We have improved the electrical properties of the ITO thin film by inserting Nb2O5/SiO2 buffer layers between the ITO layer and the CSG substrate. As a result, a protected and index-matched 30-nm-thick ITO thin film with sheet resistance less than 120O/sq and optical transmittance higher than 90% (at 550 nm) has been achieved.

UR - http://www.scopus.com/inward/record.url?scp=84906043672&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84906043672&partnerID=8YFLogxK

U2 - 10.7567/JJAP.53.08NG01

DO - 10.7567/JJAP.53.08NG01

M3 - Article

AN - SCOPUS:84906043672

VL - 53

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 8 SPEC. ISSUE 3

M1 - 08NG01

ER -