Effects of Nb2O5 and SiO2 buffer layers on the suppression of potassium out-diffusion into indium tin oxide electrode formed on chemically strengthened glass

Chan Hwa Hong, Jae Heon Shin, Nae Man Park, Kyung Hyun Kim, Bo Sul Kim, Joon Seop Kwak, Byeong Kwon Ju, Woo Seok Cheong

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Abstract

We have investigated the electrical properties of indium tin oxide (ITO) thin films deposited on chemically strengthened glass (CSG) substrate by room-temperature ionized physical vapor deposition (IPVD). The ITO thin film on the CSG substrate shows a higher sheet resistance after hightemperature anneal process (>200 °C) possibly due to the out-diffusion of potassium ions (K+) from the CSG. We have improved the electrical properties of the ITO thin film by inserting Nb2O5/SiO2 buffer layers between the ITO layer and the CSG substrate. As a result, a protected and index-matched 30-nm-thick ITO thin film with sheet resistance less than 120O/sq and optical transmittance higher than 90% (at 550 nm) has been achieved.

Original languageEnglish
Article number08NG01
JournalJapanese Journal of Applied Physics
Volume53
Issue number8 SPEC. ISSUE 3
DOIs
Publication statusPublished - 2014 Jan 1

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ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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