Effects of N+-implanted sapphire (0 0 0 1) substrate on GaN epilayer

Yong Suk Cho, Eui Kwan Koh, Young Ju Park, Dongwan Koh, Eun Kyu Kim, Youngboo Moon, Shi Jong Leem, Gyeungho Kim, Dong Jin Byun

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We have investigated the effects of N+-implanted sapphire (0 0 0 1) substrate on a GaN epilayer grown by metal-organic chemical vapor deposition (MOCVD). As a result of implantation with 55keV nitrogen ions (N+) to a dose ranging from 1 × 1015 to 1 × 1017cm-2 prior to GaN epilayer growth, the N+-implanted sapphire surface was chemo-physically modified and a thin disordered AlN phase was observed. The N+-implanted substrate's surface had decreased internal free energies during the growth of the GaN epilayer, and the misfit strain was relieved through the formation of an AlN phase on the N+-implanted sapphire (0 0 0 1) substrate. Crystallographical and optical properties of GaN epilayer grown on N+-implanted sapphire (0 0 0 1) substrate with the ion dose of 1 × 1016cm-2 were found to be improved, indicating decreased internal stress and generation of dislocations in the GaN epilayer. The present results show that N+-implantation pre-treatment of the sapphire (0 0 0 1) substrate surface can be used to improve the properties of GaN epilayers grown by MOCVD.

Original languageEnglish
Pages (from-to)538-544
Number of pages7
JournalJournal of Crystal Growth
Volume236
Issue number4
DOIs
Publication statusPublished - 2002 Mar 1

Fingerprint

Aluminum Oxide
Epilayers
Sapphire
sapphire
Substrates
Organic Chemicals
Organic chemicals
metalorganic chemical vapor deposition
implantation
Chemical vapor deposition
Metals
dosage
Ions
nitrogen ions
pretreatment
residual stress
Ion implantation
Free energy
free energy
Residual stresses

Keywords

  • A1. Characterization
  • A3. Metal-organic chemical vapor deposition
  • B1. Nitrides

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Effects of N+-implanted sapphire (0 0 0 1) substrate on GaN epilayer. / Cho, Yong Suk; Koh, Eui Kwan; Park, Young Ju; Koh, Dongwan; Kim, Eun Kyu; Moon, Youngboo; Leem, Shi Jong; Kim, Gyeungho; Byun, Dong Jin.

In: Journal of Crystal Growth, Vol. 236, No. 4, 01.03.2002, p. 538-544.

Research output: Contribution to journalArticle

Cho, YS, Koh, EK, Park, YJ, Koh, D, Kim, EK, Moon, Y, Leem, SJ, Kim, G & Byun, DJ 2002, 'Effects of N+-implanted sapphire (0 0 0 1) substrate on GaN epilayer', Journal of Crystal Growth, vol. 236, no. 4, pp. 538-544. https://doi.org/10.1016/S0022-0248(02)00840-0
Cho, Yong Suk ; Koh, Eui Kwan ; Park, Young Ju ; Koh, Dongwan ; Kim, Eun Kyu ; Moon, Youngboo ; Leem, Shi Jong ; Kim, Gyeungho ; Byun, Dong Jin. / Effects of N+-implanted sapphire (0 0 0 1) substrate on GaN epilayer. In: Journal of Crystal Growth. 2002 ; Vol. 236, No. 4. pp. 538-544.
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AB - We have investigated the effects of N+-implanted sapphire (0 0 0 1) substrate on a GaN epilayer grown by metal-organic chemical vapor deposition (MOCVD). As a result of implantation with 55keV nitrogen ions (N+) to a dose ranging from 1 × 1015 to 1 × 1017cm-2 prior to GaN epilayer growth, the N+-implanted sapphire surface was chemo-physically modified and a thin disordered AlN phase was observed. The N+-implanted substrate's surface had decreased internal free energies during the growth of the GaN epilayer, and the misfit strain was relieved through the formation of an AlN phase on the N+-implanted sapphire (0 0 0 1) substrate. Crystallographical and optical properties of GaN epilayer grown on N+-implanted sapphire (0 0 0 1) substrate with the ion dose of 1 × 1016cm-2 were found to be improved, indicating decreased internal stress and generation of dislocations in the GaN epilayer. The present results show that N+-implantation pre-treatment of the sapphire (0 0 0 1) substrate surface can be used to improve the properties of GaN epilayers grown by MOCVD.

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