Effects of N+-implanted sapphire (0 0 0 1) substrate on GaN epilayer

Yong Suk Cho, Eui Kwan Koh, Young Ju Park, Dongwan Koh, Eun Kyu Kim, Youngboo Moon, Shi Jong Leem, Gyeungho Kim, Dong Jin Byun

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13 Citations (Scopus)

Abstract

We have investigated the effects of N+-implanted sapphire (0 0 0 1) substrate on a GaN epilayer grown by metal-organic chemical vapor deposition (MOCVD). As a result of implantation with 55keV nitrogen ions (N+) to a dose ranging from 1 × 1015 to 1 × 1017cm-2 prior to GaN epilayer growth, the N+-implanted sapphire surface was chemo-physically modified and a thin disordered AlN phase was observed. The N+-implanted substrate's surface had decreased internal free energies during the growth of the GaN epilayer, and the misfit strain was relieved through the formation of an AlN phase on the N+-implanted sapphire (0 0 0 1) substrate. Crystallographical and optical properties of GaN epilayer grown on N+-implanted sapphire (0 0 0 1) substrate with the ion dose of 1 × 1016cm-2 were found to be improved, indicating decreased internal stress and generation of dislocations in the GaN epilayer. The present results show that N+-implantation pre-treatment of the sapphire (0 0 0 1) substrate surface can be used to improve the properties of GaN epilayers grown by MOCVD.

Original languageEnglish
Pages (from-to)538-544
Number of pages7
JournalJournal of Crystal Growth
Volume236
Issue number4
DOIs
Publication statusPublished - 2002 Mar 1

Keywords

  • A1. Characterization
  • A3. Metal-organic chemical vapor deposition
  • B1. Nitrides

ASJC Scopus subject areas

  • Condensed Matter Physics

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    Cho, Y. S., Koh, E. K., Park, Y. J., Koh, D., Kim, E. K., Moon, Y., Leem, S. J., Kim, G., & Byun, D. J. (2002). Effects of N+-implanted sapphire (0 0 0 1) substrate on GaN epilayer. Journal of Crystal Growth, 236(4), 538-544. https://doi.org/10.1016/S0022-0248(02)00840-0