Effects of oxygen partial pressure on the electrical and optical properties of pulsed-laser-deposited sb-doped Sno 2 films

Hyun Gi Hong, June O. Song, Sang Ho Kim, Takhee Lee, Tae Yeon Seong

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We have investigated the electrical and optical properties of pulsed-laser-deposited Sb-doped SnO 2 films (250 nm thick) as a function of the oxygen partial pressure. The SnO 2 films were grown on glass substrates using a SnO 2 target containing 5 atom % Sb. The distance between the substrate and the target was 7 cm and working pressure varied from 1.1 to 13.3 Pa. The target was ablated using KrF excimer laser with energy density of 3.75 J/cm 2. It is shown that the electrical and optical properties of the films grown at 480°C with 3000 pulses sensitively depend on the oxygen pressure. The electron concentration is maximum (5.6 × 10 20 cm -3) at 4 Pa, the electron mobility is maximum (8.5 cm 2 V -1 s -1) at 9.3 Pa, and the resistivity is minimum (2.5 × 10 -3 Ω cm) at 4 Pa. The transmittance is shown to depend on the oxygen pressures. X-ray diffraction results show that the crystalline quality of the films becomes improved with decreasing oxygen pressure. It is further shown that the sample grown at 1.1 Pa contains oxygen-deficient phases. The UV absorption edge of the films shifts toward the shorter wavelengths with decreasing oxygen pressure, which is attributed to Burstein-Moss shift.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume153
Issue number10
DOIs
Publication statusPublished - 2006 Sep 13

    Fingerprint

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this