We have investigated the electrical and optical properties of pulsed-laser-deposited Sb-doped SnO2films (250 nm thick) as a function of the oxygen partial pressure. The SnO2films were grown on glass substrates using a SnO2target containing 5 atom % Sb. The distance between the substrate and the target was 7 cm and working pressure varied from 1.1 to 13.3 Pa. The target was ablated using KrF excimer laser with energy density of 3.75 J/cm2. It is shown that the electrical and optical properties of the films grown at 480°C with 3000 pulses sensitively depend on the oxygen pressure. The electron concentration is maximum (5.6 × 1020cm-3) at 4 Pa, the electron mobility is maximum (8.5 cm2V-1s-1) at 9.3 Pa, and the resistivity is minimum (2.5 × 10-3Ω cm) at 4 Pa. The transmittance is shown to depend on the oxygen pressures. X-ray diffraction results show that the crystalline quality of the films becomes improved with decreasing oxygen pressure. It is further shown that the sample grown at 1.1 Pa contains oxygen-deficient phases. The UV absorption edge of the films shifts toward the shorter wavelengths with decreasing oxygen pressure, which is attributed to Burstein-Moss shift.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry