Effects of oxygen-plasma treatment on lanthanum-substituted bismuth titanate ferroelectric thin films

E. R. Park, Cheol Eui Lee, S. J. Yeom

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Oxygen-plasma treatment has been done on Bi3.25La 0.85Ti3O12 (BLT) films for lower crystallization temperatures and improved ferroelectric properties. The films, prepared by metal organic decomposition method on Pt and IrO2 electrodes sputtered on Al2O3/SiO2/Si substrates, were pre-annealed at the relatively low temperatures of 550 and 600 °C, followed by room temperature microwave oxygen-plasma treatment. The oxygen-plasma-treated BLT films showed very good ferroelectric characteristics after a final furnace annealing at 600 °C.

Original languageEnglish
Pages (from-to)185-188
Number of pages4
JournalThin Solid Films
Volume497
Issue number1-2
DOIs
Publication statusPublished - 2006 Feb 21

Fingerprint

Lanthanum
Ferroelectric thin films
oxygen plasma
Bismuth
lanthanum
bismuth
Oxygen
Plasmas
Ferroelectric materials
thin films
Crystallization
Temperature
furnaces
Furnaces
Metals
Microwaves
Annealing
crystallization
Decomposition
decomposition

Keywords

  • Ferroelectric properties
  • Plasma processing and deposition

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Effects of oxygen-plasma treatment on lanthanum-substituted bismuth titanate ferroelectric thin films. / Park, E. R.; Lee, Cheol Eui; Yeom, S. J.

In: Thin Solid Films, Vol. 497, No. 1-2, 21.02.2006, p. 185-188.

Research output: Contribution to journalArticle

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