Effects of oxygen pressure and Mn-doping on the electrical and dielectric properties of Bi₅Nb₃O₁₅ thin film grown by pulsed laser deposition

Engineering & Materials Science

• Pulsed laser deposition 100%
• Dielectric properties 78%
• Doping (additives) 72%
• Electric properties 68%
• Thin films 61%
• Oxygen 52%
• Oxygen vacancies 42%
• Leakage currents 19%
• Current density 17%
• Crystalline materials 9%
• Permittivity 9%
• Evaporation 9%
• Temperature 3%

Chemical Compounds

• Pulsed Laser Deposition 85%
• Dielectric Property 65%
• Electrical Property 54%
• Pressure 37%
• Dioxygen 31%
• Liquid Film 31%
• Leakage Current 24%
• Current Density 13%
• Dielectric Constant 8%
• Evaporation 8%

Physics & Astronomy

• pulsed laser deposition 61%
• dielectric properties 53%
• electrical properties 47%
• oxygen 39%
• thin films 33%
• leakage 15%
• breakdown 14%
• current density 13%
• evaporation 7%
• permittivity 6%
• temperature 2%