Effects of oxygen pressure on electrical properties of (Na 0.5K 0.5)NbO 3 films grown on Pt/Ti/SiO 2/Si substrates

Bo Yun Kim, Tae Geun Seong, In Tae Seo, Jin Seong Kim, Chong-Yun Kang, Seok Jin Yoon, Sahn Nahm

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

(Na 0.5K 0.5)NbO 3 (NKN) films were annealed under various oxygen partial pressures (OPPs), and the effect of the OPP on the electrical properties of the NKN films was investigated. The dielectric and piezoelectric constants of the NKN film were not influenced by the OPP. However, the remnant polarization and coercive field decreased when the OPP exceeded 25.0 torr because of the low breakdown field and high leakage current. The NKN film annealed under air atmosphere exhibited a high leakage current density that decreased with increasing OPP because of the decreased number of oxygen vacancies. The minimum leakage current density of 3.7 × 10 -8 A cm -2 at 0.3 MV cm -1 was obtained for the NKN film annealed under an OPP of 25.0 torr. The leakage current increased when the OPP exceeded 25.0 torr because of the formation of oxygen interstitial ions. The leakage current of the Pt/NKN/Pt device was explained by Schottky emission. The obtained Schottky barrier height between the Pt electrode and NKN film was ∼1.24 eV.

Original languageEnglish
Pages (from-to)7034-7040
Number of pages7
JournalActa Materialia
Volume60
Issue number20
DOIs
Publication statusPublished - 2012 Dec 1

Keywords

  • Electrical property
  • Leakage current mechanism
  • NKN thin film
  • Oxygen partial pressure
  • Oxygen vacancy

ASJC Scopus subject areas

  • Ceramics and Composites
  • Metals and Alloys
  • Polymers and Plastics
  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'Effects of oxygen pressure on electrical properties of (Na <sub>0.5</sub>K <sub>0.5</sub>)NbO <sub>3</sub> films grown on Pt/Ti/SiO <sub>2</sub>/Si substrates'. Together they form a unique fingerprint.

  • Cite this