Effects of photoelectrochemical etching of n-polar and Ga-polar gallium nitride on sapphire substrates

Younghun Jung, Kwang Hyeon Baik, Fan Ren, Stephen J. Pearton, Jihyun Kim

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38 Citations (Scopus)


We studied the effects of photo electrochemical (PEC) etching by using various concentrations (1, 2, and 4 M) of KOH solutions on both Ga- and N-face GaN layers on sapphire substrates. The Ga-face was chemically stable for KOH solutions, while by sharp contrast the KOH could etch the N-face, where the 6-fold symmetry was observed after the PEC etching. Surface texturing of GaN-based light emitting diodes and solar cells by KOH-based PEC etch could enhance the efficiency of GaN-based photonic devices by increasing the number of the scattering events and randomly changing the angles of the light.

Original languageEnglish
Pages (from-to)H676-H678
JournalJournal of the Electrochemical Society
Issue number6
Publication statusPublished - 2010 Nov 1


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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