Effects of photoelectrochemical etching of n-polar and Ga-polar gallium nitride on sapphire substrates

Younghun Jung, Kwang Hyeon Baik, Fan Ren, Stephen J. Pearton, Ji Hyun Kim

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

We studied the effects of photo electrochemical (PEC) etching by using various concentrations (1, 2, and 4 M) of KOH solutions on both Ga- and N-face GaN layers on sapphire substrates. The Ga-face was chemically stable for KOH solutions, while by sharp contrast the KOH could etch the N-face, where the 6-fold symmetry was observed after the PEC etching. Surface texturing of GaN-based light emitting diodes and solar cells by KOH-based PEC etch could enhance the efficiency of GaN-based photonic devices by increasing the number of the scattering events and randomly changing the angles of the light.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume157
Issue number6
DOIs
Publication statusPublished - 2010 Nov 1

Fingerprint

Electrochemical etching
Gallium nitride
Aluminum Oxide
gallium nitrides
Sapphire
Etching
sapphire
etching
Photonic devices
Texturing
Substrates
Light emitting diodes
Solar cells
light emitting diodes
solar cells
photonics
Scattering
symmetry
cells
scattering

ASJC Scopus subject areas

  • Electrochemistry
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics

Cite this

Effects of photoelectrochemical etching of n-polar and Ga-polar gallium nitride on sapphire substrates. / Jung, Younghun; Baik, Kwang Hyeon; Ren, Fan; Pearton, Stephen J.; Kim, Ji Hyun.

In: Journal of the Electrochemical Society, Vol. 157, No. 6, 01.11.2010.

Research output: Contribution to journalArticle

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